Quantitative Model-Based Photoelastic Characterization of Wafer-Bonding Stresses: a Tool for Industry and Education

基于定量模型的晶圆键合应力光弹性表征：工业和教育工具

• 批准号: 0700704
• 负责人: Harley Johnson
• 金额: $ 33.5万
• 依托单位: University of Illinois at Urbana-Champaign
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2007
• 资助国家: 美国
• 起止时间: 2007-09-15 至 2011-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0700704&HistoricalAwards=false
• 关键词: Quantitative; Model; Based; Photoelastic; Characterization

Intellectual Merit: In this project a modeling framework will be developed to complement a newly developed technique for interface characterization in direct-bonded silicon wafers. The infrared grey field polariscope (IR-GFP) photoelastic measurement technique is a powerful method that offers faster throughput and finer spatial resolution than other techniques for investigating stress sources at direct-bond interfaces. The method can make qualitative comparisons of stress intensities due to various types of defects, but it measures only a through-thickness average of stress in the wafers. The new modeling method will make the characterization technique more quantitative by incorporating the mechanics of adhesion in direct wafer bonding through an atomistic consideration of surface adhesion forces. Surface contact elements will be developed to mimic the atomistic interactions between the two surfaces, and several important geometries will then be studied both computationally and experimentally for validation. Broader Impact: The quantitative model-based characterization approach will allow for full-field stress tensor measurements with high accuracy, resolution, and speed. This will make a major contribution to the industrial inspection of wafer-bonded interfaces for silicon-on-insulator (SOI) device processing. The method will also be developed for use as a lab module in the Undergraduate Materials Testing Instructional Laboratory at UIUC. By including this model-based experimental technique as a characterization methods taught in the materials lab, a new generation of undergraduate students will be exposed to a high-tech approach relevant to the semiconductor industry, they will investigate contact mechanics in small scale systems, and they will learn about fundamentals of photoelasticity.

智力优势：在该项目中，将开发一个建模框架，以补充新开发的直接键合硅晶片界面表征技术。 红外灰场偏光镜（IR-GFP）光弹性测量技术是一种强大的方法，提供更快的吞吐量和更精细的空间分辨率比其他技术调查在直接键界面的应力源。 该方法可以对由于各种类型的缺陷引起的应力强度进行定性比较，但它只能测量晶片中应力的全厚度平均值。 新的建模方法将使表征技术更定量的结合在直接晶片键合通过原子考虑表面粘附力的粘附力学。 将开发表面接触元件来模拟两个表面之间的原子相互作用，然后将在计算和实验上研究几个重要的几何形状以进行验证。 更广泛的影响：基于定量模型的表征方法将允许具有高精度、分辨率和速度的全场应力张量测量。 这将为绝缘体上硅（SOI）器件加工的晶圆键合界面的工业检测做出重大贡献。 该方法还将被开发用作UIUC本科材料测试教学实验室的实验室模块。 通过将这种基于模型的实验技术作为材料实验室教授的表征方法，新一代本科生将接触到与半导体行业相关的高科技方法，他们将研究小规模系统中的接触力学，并将学习光弹性的基本原理。