2010 Defects in Semiconductors Gordon Research Conference; New London, NH; August 3-8, 2010

技术上的。戈登半导体缺陷研究会议将于2010年8月3日至8日在新伦敦的科尔比-索耶学院举行。会议的目标是促进对同质和结构半导体中的缺陷和缺陷相关现象的基本了解。这些缺陷在电子材料的生长和/或加工过程中发生或引入。会议讨论了一系列块状和纳米级电子材料中的缺陷，以帮助促进对宽带隙半导体、掺杂纳米颗粒和石墨烯等新兴材料的基本了解。我们将详细讨论块状、薄膜和纳米级半导体的电学、磁性和光学性质。在生长和加工过程中控制氧化锌、氮化物、钻石和光伏中的缺陷是几个会议的主题。在异质外延生长硅、碳化硅和GaN过程中出现的界面和扩展缺陷也将受到极大的关注。有几场会议聚焦于新兴材料，包括自旋电子半导体、铁电材料、石墨烯和缺陷/掺杂纳米颗粒。对原子尺度成像技术的讨论，结合最先进的理论方法，将有助于从根本上理解缺陷的原子水平机制。会议将为大学、政府和工业科学家之间的互动提供一个论坛，并将强调有争议和/或前瞻性的主题。非技术性的。这次会议的一个重要影响将是增加来自代表性不足群体的年轻科学家的出席人数。戈登会议的设置和形式鼓励多层面的互动，以及高级员工和职业生涯早期员工之间的互动。将努力使妇女和少数群体更好地参与与电子材料有关的领域。随着评估该领域和未来方向的机会，预计大学、研究机构和行业之间将建立新的联系。申请的NSF资金将用于促进年轻教师、博士后研究助理和研究生参加会议。

Technical. A Gordon Research Conference on Defects in Semiconductors will be held at Colby-Sawyer College in New London, NH, August 3-8, 2010. The goal of the conference is to promote fundamental understanding of defects and defect-related phenomena in homogeneous and structured semiconductors. These defects occur, or are introduced, during growth and/or processing of electronic materials. The conference deals with defects in a broad range of bulk and nanoscale electronic materials to assist advancing fundamental understanding in emerging materials such as wide-band-gap semiconductors, doped nanoparticles, and graphene. Electronic, magnetic, and optical properties of bulk, thin film, and nanoscale semiconductors will be discussed in detail. Control of defects in ZnO, nitrides, diamond, and photovoltaics during growth and processing are subjects of several sessions. Interface and extended defects that occur during heteroepitaxial growth of Si, SiC, and GaN will also receive significant attention. There are several sessions focusing on emerging materials, including spintronic semiconductors, ferroelectrics, graphene, and defective/doped nanoparticles. Discussions of atomic-scale imaging techniques, combined with state-of-the-art theoretical methods, will contribute to a fundamental understanding of the atomic-level mechanisms of defects. The conference will provide a forum for interaction between university, government and industrial scientists, and topics that are controversial and/or forward-looking will be emphasized. Non-technical. An important impact of this conference will be to increase the attendance of young scientists from under-represented groups. The Gordon conference setting and format encourage interactions on multiple levels, and among senior staff and those early in their careers. Efforts will be made to improve the inclusion of women and minorities in fields related to electronic materials. Along with the opportunity to assess the field and future directions, it is expected that new ties will be established among universities, research institutions, and industry. The requested NSF funds will be used to facilitate participation in the meeting by young faculty, postdoctoral research associates and graduate students.