2010 Defects in Semiconductors Gordon Research Conference; New London, NH; August 3-8, 2010

2010 年半导体缺陷戈登研究会议；

• 批准号: 1019154
• 负责人: Shengbai Zhang
• 金额: $ 0.6万
• 依托单位: Gordon Research Conferences
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2010
• 资助国家: 美国
• 起止时间: 2010-06-01 至 2011-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1019154&HistoricalAwards=false
• 关键词: 2010; Defects; Semiconductors; Gordon; Research

Technical. A Gordon Research Conference on Defects in Semiconductors will be held at Colby-Sawyer College in New London, NH, August 3-8, 2010. The goal of the conference is to promote fundamental understanding of defects and defect-related phenomena in homogeneous and structured semiconductors. These defects occur, or are introduced, during growth and/or processing of electronic materials. The conference deals with defects in a broad range of bulk and nanoscale electronic materials to assist advancing fundamental understanding in emerging materials such as wide-band-gap semiconductors, doped nanoparticles, and graphene. Electronic, magnetic, and optical properties of bulk, thin film, and nanoscale semiconductors will be discussed in detail. Control of defects in ZnO, nitrides, diamond, and photovoltaics during growth and processing are subjects of several sessions. Interface and extended defects that occur during heteroepitaxial growth of Si, SiC, and GaN will also receive significant attention. There are several sessions focusing on emerging materials, including spintronic semiconductors, ferroelectrics, graphene, and defective/doped nanoparticles. Discussions of atomic-scale imaging techniques, combined with state-of-the-art theoretical methods, will contribute to a fundamental understanding of the atomic-level mechanisms of defects. The conference will provide a forum for interaction between university, government and industrial scientists, and topics that are controversial and/or forward-looking will be emphasized. Non-technical. An important impact of this conference will be to increase the attendance of young scientists from under-represented groups. The Gordon conference setting and format encourage interactions on multiple levels, and among senior staff and those early in their careers. Efforts will be made to improve the inclusion of women and minorities in fields related to electronic materials. Along with the opportunity to assess the field and future directions, it is expected that new ties will be established among universities, research institutions, and industry. The requested NSF funds will be used to facilitate participation in the meeting by young faculty, postdoctoral research associates and graduate students.

技术。关于半导体缺陷的Gordon研究会议将于2010年8月3-8日在新罕布什尔州新伦敦的Colby-Sawyer学院举行。会议的目标是促进对均匀和结构半导体中缺陷和缺陷相关现象的基本理解。这些缺陷是在电子材料的生长和/或加工过程中发生或引入的。会议讨论了广泛的块状和纳米级电子材料中的缺陷，以帮助推进对新兴材料（如宽带隙半导体、掺杂纳米颗粒和石墨烯）的基本理解。电子，磁性和光学性质的大块，薄膜，和纳米级半导体将被详细讨论。在生长和加工过程中，ZnO，氮化物，金刚石和光伏中的缺陷控制是几个会议的主题。在Si， SiC和GaN的异质外延生长过程中出现的界面和扩展缺陷也将受到极大的关注。有几个会议聚焦于新兴材料，包括自旋电子半导体、铁电体、石墨烯和缺陷/掺杂纳米颗粒。原子尺度成像技术的讨论，结合最先进的理论方法，将有助于对缺陷的原子水平机制的基本理解。会议将为大学、政府和工业科学家之间的互动提供一个论坛，并将强调有争议和/或前瞻性的主题。非技术。这次会议的一个重要影响将是增加来自代表性不足群体的年轻科学家的出席率。戈登会议的设置和形式鼓励多层次的互动，以及高级员工和职业生涯早期的员工之间的互动。将努力使妇女和少数民族更好地参与与电子材料有关的领域。除了有机会评估该领域和未来方向外，预计还将在大学、研究机构和产业界之间建立新的联系。申请的NSF资金将用于促进年轻教师、博士后研究助理和研究生参加会议。