NER: Modulation doped colloidal quantum dots and solution-based semiconductor nanowires

NER:调制掺杂胶体量子点和基于溶液的半导体纳米线

基本信息

  • 批准号:
    0609172
  • 负责人:
  • 金额:
    $ 9.81万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    2006
  • 资助国家:
    美国
  • 起止时间:
    2006-09-01 至 2008-08-31
  • 项目状态:
    已结题

项目摘要

The objective of this research is to develop a generic doping strategy for solution-based colloidal quantum dots and semiconductor nanowires. The approach is based on the concept of modulation doping, first developed for bulk semiconductors. Within the context of the proposed work, this study specifically entails passivating colloidal quantum dots and nanowires with another semiconductor in a core/shell or coaxial configuration. Dopant atoms will simultaneously be incorporated into the outer semiconductor cladding, enabling the spatially indirect doping of the targeted material because of favorable band offsets at the interface. This approach bypasses longstanding problems associated with the direct substitutional doping of nanostructured materials. The intellectual merit of the proposed work includes the development of an alternative, yet generic, doping strategy for nanoscale materials. It also addresses the doping of solution-based semiconductor nanowires, which has yet to be accomplished. The broader impact of the work includes the possible development of nanowire-based devices involving branched nanowire morphologies such as those with tripod, v-, and y-shapes. More immediate applications include the possible development of dual contrast agents for biological tagging applications. This is achieved by preserving the high fluorescence quantum yields of native nanostructures while simultaneously incorporating spin active impurities into an outer cladding layer. Such nanostructures can then be imaged via divergent techniques such as fluorescence resonance energy transfer and/or magnetic resonance imaging. Broader Impact:All proposed studies are tied into educational initiatives by the PI and Co-PI to expose undergraduates and local area high school teachers to the emerging field of nanoscience.
本研究的目的是开发一种通用的掺杂策略,基于溶液的胶体量子点和半导体纳米线。 该方法是基于调制掺杂的概念,首先开发的散装半导体。 在拟议工作的背景下,这项研究特别需要钝化胶体量子点和纳米线与另一种半导体在核/壳或同轴配置。 掺杂剂原子将同时并入到外部半导体包层中,由于界面处有利的带偏移,使得能够对目标材料进行空间间接掺杂。 这种方法绕过了与纳米结构材料的直接替代掺杂相关的长期存在的问题。 拟议工作的智力价值包括为纳米级材料开发一种替代性但通用的掺杂策略。 它还解决了基于溶液的半导体纳米线的掺杂,这还没有完成。 这项工作的更广泛影响包括可能开发基于纳米线的器件,这些器件涉及分支纳米线形态,如三角形,v形和y形。 更直接的应用包括可能开发用于生物标记应用的双重造影剂。 这是通过保持天然纳米结构的高荧光量子产率,同时将自旋活性杂质掺入外包层中来实现的。 然后可以通过发散技术(例如荧光共振能量转移和/或磁共振成像)对这种纳米结构进行成像。 更广泛的影响:所有拟议的研究都与PI和Co-PI的教育计划挂钩,使本科生和当地高中教师接触纳米科学的新兴领域。

项目成果

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Masaru Kuno其他文献

Can lasers really refrigerate CdS nanobelts?
激光真的能给硫化镉纳米带制冷吗?
  • DOI:
    10.1038/s41586-019-1269-1
  • 发表时间:
    2019-06-26
  • 期刊:
  • 影响因子:
    48.500
  • 作者:
    Yurii V. Morozov;Shubin Zhang;Anupum Pant;Boldizsár Jankó;Seth D. Melgaard;Daniel A. Bender;Peter J. Pauzauskie;Masaru Kuno
  • 通讯作者:
    Masaru Kuno
Principles for demonstrating condensed phase optical refrigeration
用于展示凝聚相光制冷的原理
  • DOI:
    10.1038/s42254-024-00804-2
  • 发表时间:
    2025-01-22
  • 期刊:
  • 影响因子:
    39.500
  • 作者:
    Zhuoming Zhang;Yang Ding;Peter J. Pauzauskie;Mansoor Sheik-Bahae;Denis V. Seletskiy;Masaru Kuno
  • 通讯作者:
    Masaru Kuno
Shining more light on photoinduced segregation
更多地揭示光致偏析现象
  • DOI:
    10.1038/s41563-020-00830-2
  • 发表时间:
    2020-10-19
  • 期刊:
  • 影响因子:
    38.500
  • 作者:
    Masaru Kuno
  • 通讯作者:
    Masaru Kuno

Masaru Kuno的其他文献

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{{ truncateString('Masaru Kuno', 18)}}的其他基金

Mid-infrared Intraband and Localized Surface Plasmon Resonance Spectroscopies of Doped Semiconductor Nanocrystals
掺杂半导体纳米晶体的中红外带内和局域表面等离子体共振光谱
  • 批准号:
    1954724
  • 财政年份:
    2020
  • 资助金额:
    $ 9.81万
  • 项目类别:
    Standard Grant
Realizing robust superfluorescence from nanocrystal superlattices
从纳米晶体超晶格实现强大的超荧光
  • 批准号:
    1952841
  • 财政年份:
    2020
  • 资助金额:
    $ 9.81万
  • 项目类别:
    Standard Grant
Spatially-resolved infrared absorption spectroscopy of individual semiconductor nanostructures
单个半导体纳米结构的空间分辨红外吸收光谱
  • 批准号:
    1563528
  • 财政年份:
    2016
  • 资助金额:
    $ 9.81万
  • 项目类别:
    Standard Grant
Direct absorption spectroscopy of individual nanostructures
单个纳米结构的直接吸收光谱
  • 批准号:
    1208091
  • 财政年份:
    2012
  • 资助金额:
    $ 9.81万
  • 项目类别:
    Standard Grant
CAREER: Disorder Induced Optical Heterogeneity in Solution-based Straight/Branched Nanowires
职业:基于溶液的直/分支纳米线中无序引起的光学异质性
  • 批准号:
    0547784
  • 财政年份:
    2006
  • 资助金额:
    $ 9.81万
  • 项目类别:
    Continuing Grant

相似海外基金

Modulation of spin capacitance through regulating spin moment in transition metal-doped 2D-MoS2-based anodes for application in ion batteries
通过调节过渡金属掺杂 2D-MoS2 基阳极的自旋矩来调节自旋电容,用于离子电池
  • 批准号:
    24K08319
  • 财政年份:
    2024
  • 资助金额:
    $ 9.81万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Liquid-Metal-Printed, Modulation-Doped 2D Metal Oxide Transistors
液态金属印刷、调制掺杂 2D 金属氧化物晶体管
  • 批准号:
    2219991
  • 财政年份:
    2022
  • 资助金额:
    $ 9.81万
  • 项目类别:
    Standard Grant
Fabrication of Er-doped Ferroelectric Thin Films and the PL Modulation by Electric Field Application
掺铒铁电薄膜的制备及电场光调制
  • 批准号:
    20900117
  • 财政年份:
    2008
  • 资助金额:
    $ 9.81万
  • 项目类别:
Materials World Network: Terahertz Spectroscopy of Modulation Doped Si and SiGe Nanostructures
材料世界网:调制掺杂硅和硅锗纳米结构的太赫兹光谱
  • 批准号:
    0601920
  • 财政年份:
    2006
  • 资助金额:
    $ 9.81万
  • 项目类别:
    Continuing Grant
Two-dimensional Electrons in Modulation-Doped AlAs Quantum Wells
调制掺杂 AlAs 量子阱中的二维电子
  • 批准号:
    0202016
  • 财政年份:
    2002
  • 资助金额:
    $ 9.81万
  • 项目类别:
    Continuing Grant
Acquistion of Instrumentation for Stress Effects on the Electrical Properties of Group III-Nitride Modulation Doped Heterostructures
获取应力对 III 族氮化物调制掺杂异质结构电性能影响的仪器
  • 批准号:
    0079587
  • 财政年份:
    2000
  • 资助金额:
    $ 9.81万
  • 项目类别:
    Standard Grant
Study of Modulation Doped Quantum Wires.
调制掺杂量子线的研究。
  • 批准号:
    11694158
  • 财政年份:
    1999
  • 资助金额:
    $ 9.81万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B).
GOALI: SiGe/Si Modulation-Doped Field-Effect Transistors for Low Power, High Speed Circuit Applications
GOALI:适用于低功耗、高速电路应用的 SiGe/Si 调制掺杂场效应晶体管
  • 批准号:
    9710418
  • 财政年份:
    1997
  • 资助金额:
    $ 9.81万
  • 项目类别:
    Continuing Grant
Fort Monmouth: Optical Studies of Novel N-typed Modulation Doped GaAs/A1As and A1As/A1GaAs Quantum Well Structures
Fort Monmouth:新型 N 型调制掺杂 GaAs/A1As 和 A1As/A1GaAs 量子阱结构的光学研究
  • 批准号:
    9311835
  • 财政年份:
    1993
  • 资助金额:
    $ 9.81万
  • 项目类别:
    Continuing Grant
"Structural and Performance Limitations of Ultra-Submicron Gate-length Modulation-Doped FET's Based on InP Substrate for MM-Wave Amplification"
“用于毫米波放大的基于 InP 衬底的超亚微米栅极长度调制掺杂 FET 的结构和性能限制”
  • 批准号:
    8921694
  • 财政年份:
    1990
  • 资助金额:
    $ 9.81万
  • 项目类别:
    Continuing Grant
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