"Structural and Performance Limitations of Ultra-Submicron Gate-length Modulation-Doped FET's Based on InP Substrate for MM-Wave Amplification"

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This research proposal is concerned with the design, realization, and characterization of 100 nm and 150 nm gate-length modulation doped field-effect transistors (MODFET's) based on lattice mateched A1InAs/InGaAs heterostructure on InP substrate, and intended for low- noise and high-gain signal amplification above 100GHz. The research efforts at Penn State will involve device structural design and Electrical characterization of the completed test device. The task of device fabrication will be undertaken by G.E. electronics Laboratory, Syracuse, NY, and the test samples will be made available to the PI for studies at no additional cost to NSF. The research will examine the electronic transport properties of the lattice matched and pseudomorphic InGaAs, and the Schottky barrier and buffer layer isolation quality of the A1InAs heterostructure layers in the MODFET structure. The characterization efforts will be organized in four different task areas involving d.c., small-signal, noise, and s-parameter measurements. These task areas will examine the key issues of device I-V and thermal stability, leakage current, breakdownvoltage, carrier concentration and mobility, parasitic equivalent network elements, low frequency 1/f type and g-r noise sources, HF intrinsic device noise sources, and extraction of the fundamental transit delay and charging time constant associated with the velocity saturated carrier transport in MODFET's. The proposed device structure is expected to provide low-noise (1dB) and high gain (8dB) amplification at 100 GHz satisfying the future DoD and NSA communication and radar system requirements.