Integrated Molecular Layer Deposition and Atomic Layer Deposition of Organic and Inorganic Thin Films
有机和无机薄膜的集成分子层沉积和原子层沉积
基本信息
- 批准号:0626256
- 负责人:
- 金额:--
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2006
- 资助国家:美国
- 起止时间:2006-07-01 至 2009-12-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
ABSTRACTPI: Gregory Parsons Institution: North Carolina State UniversityProposal Number: 0626256Title: Integrated Molecular Layer Deposition and Atomic Layer Deposition of Organic and Inorganic Thin FilmsProject SummaryMany new electronic systems, including displays, solid-state light sources, photovoltaic and other energy conversion devices make use of organic thin films, where the organic materials are chemically coupled to more traditional inorganic electronic materials. The nature of the inorganic/organic interface is particularly important in controlling device function and performance, yet there is not a significant base of fundamental knowledge regarding chemical processes needed to form well-controlled organic/inorganic interfaces. This project, therefore, will address fundamental physical and chemical challenges associated with vapor-source deposition and atomic-scale combination of organic and inorganic thin film materials. The work will expand the emerging field of molecular vapor deposition to include study of covalently bound organic monolayer and multilayer polymeric films, as well as combining molecular vapor deposition with atomic layer deposition to achieve integrated organic/inorganic heterostructures. A key activity will be to identify reaction schemes for depositing metal overlayers onto organic surfaces that impart minimal damage to the organic, while achieving good interface structure as determined by electronic, physical, and chemical characterization probes. The key intellectual merit includes: a) improved understanding of organic thin film and organic/inorganic interface processing, including better insight into transport and reaction mechanisms in deposition; b) improved control over lateral and vertical bonding structure in nanometer-scale structure fabrication; c) establishment of well defined relations between formation chemistry and high-performance device function; and d) expanding the knowledge needed to scale-up molecule-based processes.Broad Impact This work has the potential for broad impact by influencing and defining methodology for future organic and hybrid organic/inorganic device fabrication and manufacturing. It will also have educational impact, the students involved will gain a broad interdisciplinary experience in organic materials and thin film processing. Undergraduate and graduate students will be introduced to new results and insights related to this project through lab projects, and through the PIs annual course Chemical Processing of Electronic Materials. The PIs interactions with companies interested in organic materials and organic electronic devices will help to quickly disseminate these results to potential industrial users. The PI has been successful at recruiting minority and female students into the area of electronic materials and processing, and it is anticipated that funding from this effort will help to further introduce under-represented groups to this exciting emerging field. The emphasis on electronic materials processing, including aspects of surface chemistry, processing, and electrical evaluation of materials, will prepare the students to make unique contributions in industry or academics.
题目:有机和无机薄膜的集成分子层沉积和原子层沉积项目摘要:许多新的电子系统,包括显示器,固态光源,光伏和其他能量转换设备都使用有机薄膜,其中有机材料与更传统的无机电子材料化学耦合。无机/有机界面的性质在控制设备的功能和性能方面尤为重要,然而,关于形成良好控制的有机/无机界面所需的化学过程的基础知识并不重要。因此,该项目将解决与气相源沉积和有机和无机薄膜材料的原子尺度组合相关的基本物理和化学挑战。这项工作将扩大分子气相沉积的新兴领域,包括共价结合的有机单层和多层聚合物薄膜的研究,以及将分子气相沉积与原子层沉积相结合,以实现有机/无机异质结构的集成。一项关键活动将是确定将金属覆盖层沉积到有机表面的反应方案,这些反应方案对有机表面的损害最小,同时通过电子、物理和化学表征探针确定良好的界面结构。关键的智力优势包括:a)提高了对有机薄膜和有机/无机界面处理的理解,包括更好地了解沉积中的传输和反应机制;B)纳米级结构制造中对横向和纵向键合结构的控制有所改善;C)建立地层化学与高性能器件功能之间明确的关系;d)扩大扩大基于分子的工艺所需的知识。这项工作通过影响和定义未来有机和混合有机/无机器件制造和制造的方法,具有广泛影响的潜力。它还将产生教育影响,参与的学生将获得有机材料和薄膜加工方面的广泛跨学科经验。本科生和研究生将通过实验室项目和PIs年度课程《电子材料化学加工》了解与该项目相关的新成果和见解。pi与对有机材料和有机电子设备感兴趣的公司的互动将有助于将这些结果迅速传播给潜在的工业用户。PI在招收少数民族和女性学生进入电子材料和加工领域方面取得了成功,预计这项努力的资金将有助于进一步将代表性不足的群体引入这一令人兴奋的新兴领域。强调电子材料加工,包括材料的表面化学、加工和电气评价等方面,将使学生在工业或学术上做出独特的贡献。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Gregory Parsons其他文献
Issues in High-ĸ Gate Stack Interfaces
- DOI:
10.1557/mrs2002.73 - 发表时间:
2011-01-31 - 期刊:
- 影响因子:4.900
- 作者:
Veena Misra;Gerry Lucovsky;Gregory Parsons - 通讯作者:
Gregory Parsons
Engineering Challenges in Molecular Electronics
分子电子学的工程挑战
- DOI:
10.1201/9781420007848.sec2 - 发表时间:
2002 - 期刊:
- 影响因子:0
- 作者:
Gregory Parsons - 通讯作者:
Gregory Parsons
Improving polymethacrylate EUV resists with TiO2 area-selective deposition
通过 TiO2 区域选择性沉积改进聚甲基丙烯酸酯 EUV 抗蚀剂
- DOI:
- 发表时间:
2022 - 期刊:
- 影响因子:0
- 作者:
Rachel A. Nye;Kaat Van Dongen;Hironori Oka;H. Furutani;Gregory Parsons;D. De Simone;A. Delabie - 通讯作者:
A. Delabie
Disorder controlled sound speed and thermal conductivity of hybrid metalcone films
杂化金属锥膜的无序控制声速和热导率
- DOI:
- 发表时间:
2024 - 期刊:
- 影响因子:0
- 作者:
Md. Shafkat Bin Hoque;Rachel A. Nye;Saman Zare;Stephanie Atkinson;Siyao Wang;Andrew H. Jones;J. Gaskins;Gregory Parsons;Patrick E. Hopkins - 通讯作者:
Patrick E. Hopkins
Gregory Parsons的其他文献
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{{ truncateString('Gregory Parsons', 18)}}的其他基金
Phase II IUCRC at North Carolina State University: Center for Dielectrics and Piezoelectrics
北卡罗来纳州立大学 IUCRC 第二阶段:电介质和压电中心
- 批准号:
1841466 - 财政年份:2019
- 资助金额:
-- - 项目类别:
Continuing Grant
Advanced Metal Thin Film Nucleation During Atomic Layer Deposition
原子层沉积过程中先进的金属薄膜成核
- 批准号:
1704151 - 财政年份:2017
- 资助金额:
-- - 项目类别:
Standard Grant
SNM: Continuous Vapor-Phase Processes for Nano-Functional Fibrous Materials Manufacturing
SNM:纳米功能纤维材料制造的连续气相工艺
- 批准号:
1344618 - 财政年份:2013
- 资助金额:
-- - 项目类别:
Standard Grant
AIR Option 1: Technology Translation - High-Throughput Roll-to-Roll Atmospheric Pressure Atomic Layer Deposition for Functional Nanocoatings on Porous and Flexible Materials
AIR 选项 1:技术转化 - 高通量卷对卷大气压原子层沉积,用于多孔和柔性材料上的功能性纳米涂层
- 批准号:
1312081 - 财政年份:2013
- 资助金额:
-- - 项目类别:
Standard Grant
Synthesis and applications of dispersible exfoliated metal oxide nanosheets fabricated by ALD
ALD法制备可分散剥离金属氧化物纳米片的合成及应用
- 批准号:
1034374 - 财政年份:2010
- 资助金额:
-- - 项目类别:
Continuing Grant
Continuous Atmospheric Pressure Atomic Layer Deposition Process for Controlled Nanoscale Thin Film Coatings
受控纳米级薄膜涂层的连续大气压原子层沉积工艺
- 批准号:
1000382 - 财政年份:2010
- 资助金额:
-- - 项目类别:
Standard Grant
NER: Solvent Assisted Atomic Layer Deposition
NER:溶剂辅助原子层沉积
- 批准号:
0304296 - 财政年份:2003
- 资助金额:
-- - 项目类别:
Standard Grant
Kinetics of Ultra-Thin Metal Oxide and Silicate Film Deposition on Silicon
硅上超薄金属氧化物和硅酸盐薄膜沉积动力学
- 批准号:
0072784 - 财政年份:2000
- 资助金额:
-- - 项目类别:
Standard Grant
CAREER: Plasma Chemical Vapor Deposition of Amorphous Silicon Thin Films near Room Temperature Using Inert Ion Enhanced Processes
职业:使用惰性离子增强工艺在室温附近进行等离子化学气相沉积非晶硅薄膜
- 批准号:
9624612 - 财政年份:1996
- 资助金额:
-- - 项目类别:
Standard Grant
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