Advanced Metal Thin Film Nucleation During Atomic Layer Deposition

原子层沉积过程中先进的金属薄膜成核

基本信息

  • 批准号:
    1704151
  • 负责人:
  • 金额:
    $ 35.88万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    2017
  • 资助国家:
    美国
  • 起止时间:
    2017-07-15 至 2021-06-30
  • 项目状态:
    已结题

项目摘要

Thin film electronic materials formed by atomic layer deposition (ALD) are now well ingrained in semiconductor device manufacturing, and they are emerging as important materials for encapsulation of organic light-emitting displays and lighting, flexible and wearable electronics, and photovoltaics, batteries, supercapacitors and other renewable energy conversion and storage devices. While commercial ALD is well developed for metal oxides, there is a strong and growing need for new approaches for metal ALD. Relatively few options are currently available due to lack of effective vapor-phase reducing agents and ALD-compatible metal precursors that provide sufficient volatility and self-limiting surface reaction capacity to satisfy ALD reaction requirements. Beyond understanding steady-state metal ALD reactions, there is a critical need to attain a more detailed understanding of metal ALD nucleation, including defining elementary reactions during growth initiation. In particular, substrate selective ALD is becoming an acute challenge for the semiconductor industry to achieve advanced sub-10 nm feature patterning. This project addresses these challenges by combining first-principles modeling with in-situ analysis of ALD nucleation and growth using novel metal precursors and reducing agents to develop new models and insights into elementary surface reactions important for advanced thin film reaction engineering design.The research project aims at exploring newly available metal precursors and metal reducing agents to expand fundamental understanding of low temperature thermally-driven reaction mechanisms on a range of substrate surfaces. The fundamental understanding of vapor/surface chemical reaction mechanisms developed by combined experiment/first-principles modeling approach may lead to new nanoscale elemental metal, semimetal and metalloid thin films by thermal atomic layer deposition (ALD). The combination of novel precursors and reducing agents combined with insights gained from modeling will be used to understand substrate-dependent nucleation. In-situ reaction analysis will improve ALD-nucleation models and provide pathways for improved selective area ALD. There is a plan to explore nucleation reversibility in ALD, including emerging thermal atomic layer etching (ALE) processes. Adapting a strategy from CVD to coupling deposition and etching, new ALE processes could refine significantly expand selective ALD capabilities. The proposed approach is unique because of the choice of novel materials to study, new modeling approaches, and unique combinations of in-situ atomic-scale surface reaction characterization tools.
通过原子层沉积(ALD)形成的薄膜电子材料现在在半导体器件制造中根深蒂固,并且它们正在成为有机发光显示器和照明、柔性和可穿戴电子器件以及光电子器件、电池、超级电容器和其他可再生能源转换和存储器件的封装的重要材料。虽然商业ALD对于金属氧化物发展良好,但对于金属ALD的新方法存在强烈且不断增长的需求。由于缺乏有效的汽相还原剂和与ALD兼容的金属前体(可提供足够的挥发性和自限制表面反应能力来满足ALD反应要求),目前可用的选择相对较少。除了理解稳态金属ALD反应之外,还迫切需要获得对金属ALD成核的更详细的理解,包括定义生长起始期间的基元反应。特别地,衬底选择性ALD正在成为半导体工业实现先进的亚10 nm特征图案化的严峻挑战。 本项目旨在通过将第一性原理模型与使用新型金属前体和还原剂的ALD成核和生长的原位分析相结合,开发对先进薄膜反应工程设计至关重要的基本表面反应的新模型和见解,以解决这些挑战。该研究项目旨在探索新的可用金属前体和金属还原剂,以扩展对低温热反应的基本理解。驱动的反应机制的范围内的基板表面。结合实验/第一性原理模拟方法开发的气相/表面化学反应机制的基本理解可能会导致新的纳米级元素金属,半金属和类金属薄膜的热原子层沉积(ALD)。新的前体和还原剂的组合,结合从建模中获得的见解将被用来了解衬底依赖的成核。原位反应分析将改进ALD成核模型,并为改进选择性区域ALD提供途径。 有一个计划,探索成核可逆性ALD,包括新兴的热原子层蚀刻(ALE)工艺。采用从CVD到耦合沉积和蚀刻的策略,新的ALE工艺可以显著提高选择性ALD的能力。所提出的方法是独特的,因为选择了新的材料来研究,新的建模方法,和独特的组合,在原位原子尺度的表面反应表征工具。

项目成果

期刊论文数量(11)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Insight on the Sequential Vapor Infiltration Mechanisms of Trimethylaluminum with Poly(methyl methacrylate), Poly(vinylpyrrolidone), and Poly(acrylic acid)
  • DOI:
    10.1021/acs.jpcc.9b02153
  • 发表时间:
    2019-07-04
  • 期刊:
  • 影响因子:
    3.7
  • 作者:
    Hill, Grant T.;Lee, Dennis T.;Parsons, Gregory N.
  • 通讯作者:
    Parsons, Gregory N.
Ab initio analysis of nucleation reactions during tungsten atomic layer deposition on Si(100) and W(110) substrates
Si(100) 和 W(110) 衬底上钨原子层沉积期间成核反应的从头分析
  • DOI:
    10.1116/1.5044740
  • 发表时间:
    2018
  • 期刊:
  • 影响因子:
    2.9
  • 作者:
    King, Mariah J.;Theofanis, Patrick L.;Lemaire, Paul C.;Santiso, Erik E.;Parsons, Gregory N.
  • 通讯作者:
    Parsons, Gregory N.
Fabrication of a freestanding metal organic framework predominant hollow fiber mat and its potential applications in gas separation and catalysis
  • DOI:
    10.1039/c9ta11701f
  • 发表时间:
    2020-02-21
  • 期刊:
  • 影响因子:
    11.9
  • 作者:
    Dai, Zijian;Lee, Dennis T.;Parsons, Gregory N.
  • 通讯作者:
    Parsons, Gregory N.
Effect of reactant dosing on selectivity during area-selective deposition of TiO 2 via integrated atomic layer deposition and atomic layer etching
通过集成原子层沉积和原子层蚀刻进行 TiO 2 区域选择性沉积过程中反应物剂量对选择性的影响
  • DOI:
    10.1063/5.0013552
  • 发表时间:
    2020
  • 期刊:
  • 影响因子:
    3.2
  • 作者:
    Saare, Holger;Song, Seung Keun;Kim, Jung-Sik;Parsons, Gregory N.
  • 通讯作者:
    Parsons, Gregory N.
Multimaterial Self-Aligned Nanopatterning by Simultaneous Adjacent Thin Film Deposition and Etching
通过同时相邻薄膜沉积和蚀刻进行多材料自对准纳米图案化
  • DOI:
    10.1021/acsnano.1c04086
  • 发表时间:
    2021
  • 期刊:
  • 影响因子:
    17.1
  • 作者:
    Song, Seung Keun;Kim, Jung-Sik;Margavio, Hannah R.;Parsons, Gregory N.
  • 通讯作者:
    Parsons, Gregory N.
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Gregory Parsons其他文献

Issues in High-ĸ Gate Stack Interfaces
  • DOI:
    10.1557/mrs2002.73
  • 发表时间:
    2011-01-31
  • 期刊:
  • 影响因子:
    4.900
  • 作者:
    Veena Misra;Gerry Lucovsky;Gregory Parsons
  • 通讯作者:
    Gregory Parsons
Engineering Challenges in Molecular Electronics
分子电子学的工程挑战
  • DOI:
    10.1201/9781420007848.sec2
  • 发表时间:
    2002
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Gregory Parsons
  • 通讯作者:
    Gregory Parsons
Improving polymethacrylate EUV resists with TiO2 area-selective deposition
通过 TiO2 区域选择性沉积改进聚甲基丙烯酸酯 EUV 抗蚀剂
  • DOI:
  • 发表时间:
    2022
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Rachel A. Nye;Kaat Van Dongen;Hironori Oka;H. Furutani;Gregory Parsons;D. De Simone;A. Delabie
  • 通讯作者:
    A. Delabie
Disorder controlled sound speed and thermal conductivity of hybrid metalcone films
杂化金属锥膜的无序控制声速和热导率
  • DOI:
  • 发表时间:
    2024
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Md. Shafkat Bin Hoque;Rachel A. Nye;Saman Zare;Stephanie Atkinson;Siyao Wang;Andrew H. Jones;J. Gaskins;Gregory Parsons;Patrick E. Hopkins
  • 通讯作者:
    Patrick E. Hopkins

Gregory Parsons的其他文献

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{{ truncateString('Gregory Parsons', 18)}}的其他基金

Phase II IUCRC at North Carolina State University: Center for Dielectrics and Piezoelectrics
北卡罗来纳州立大学 IUCRC 第二阶段:电介质和压电中心
  • 批准号:
    1841466
  • 财政年份:
    2019
  • 资助金额:
    $ 35.88万
  • 项目类别:
    Continuing Grant
SNM: Continuous Vapor-Phase Processes for Nano-Functional Fibrous Materials Manufacturing
SNM:纳米功能纤维材料制造的连续气相工艺
  • 批准号:
    1344618
  • 财政年份:
    2013
  • 资助金额:
    $ 35.88万
  • 项目类别:
    Standard Grant
AIR Option 1: Technology Translation - High-Throughput Roll-to-Roll Atmospheric Pressure Atomic Layer Deposition for Functional Nanocoatings on Porous and Flexible Materials
AIR 选项 1:技术转化 - 高通量卷对卷大气压原子层沉积,用于多孔和柔性材料上的功能性纳米涂层
  • 批准号:
    1312081
  • 财政年份:
    2013
  • 资助金额:
    $ 35.88万
  • 项目类别:
    Standard Grant
Synthesis and applications of dispersible exfoliated metal oxide nanosheets fabricated by ALD
ALD法制备可分散剥离金属氧化物纳米片的合成及应用
  • 批准号:
    1034374
  • 财政年份:
    2010
  • 资助金额:
    $ 35.88万
  • 项目类别:
    Continuing Grant
Continuous Atmospheric Pressure Atomic Layer Deposition Process for Controlled Nanoscale Thin Film Coatings
受控纳米级薄膜涂层的连续大气压原子层沉积工艺
  • 批准号:
    1000382
  • 财政年份:
    2010
  • 资助金额:
    $ 35.88万
  • 项目类别:
    Standard Grant
Integrated Molecular Layer Deposition and Atomic Layer Deposition of Organic and Inorganic Thin Films
有机和无机薄膜的集成分子层沉积和原子层沉积
  • 批准号:
    0626256
  • 财政年份:
    2006
  • 资助金额:
    $ 35.88万
  • 项目类别:
    Standard Grant
NER: Solvent Assisted Atomic Layer Deposition
NER:溶剂辅助原子层沉积
  • 批准号:
    0304296
  • 财政年份:
    2003
  • 资助金额:
    $ 35.88万
  • 项目类别:
    Standard Grant
Kinetics of Ultra-Thin Metal Oxide and Silicate Film Deposition on Silicon
硅上超薄金属氧化物和硅酸盐薄膜沉积动力学
  • 批准号:
    0072784
  • 财政年份:
    2000
  • 资助金额:
    $ 35.88万
  • 项目类别:
    Standard Grant
CAREER: Plasma Chemical Vapor Deposition of Amorphous Silicon Thin Films near Room Temperature Using Inert Ion Enhanced Processes
职业:使用惰性离子增强工艺在室温附近进行等离子化学气相沉积非晶硅薄膜
  • 批准号:
    9624612
  • 财政年份:
    1996
  • 资助金额:
    $ 35.88万
  • 项目类别:
    Standard Grant

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