权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

Modeling and simulation of transport and trapping phenomena in high-k-dielectrics

高 k 电介质中的输运和俘获现象的建模和仿真

基本信息

批准号：
180946098
负责人：
Professor Dr. Paolo Lugli
金额：
--
依托单位：
Libera Università di Bolzano
依托单位国家：
德国
项目类别：
Research Grants
财政年份：
2010
资助国家：
德国
起止时间：
2009-12-31 至 2013-12-31
项目状态：
已结题

来源：
https://gepris.dfg.de/gepris/projekt/180946098?language=en
关键词：
Modeling simulation transport trapping phenomena

项目摘要

Continuing the miniaturization of integrated circuits inevitably requires the replacement of SiO2 by other insulators with superior dielectric properties, the so called ‘high-κ’ dielectrics (κ: permittivity). Introduction of high-κs solves the most urgent problem of semiconductor industry, exponentially growing leakage currents, and thus enables further scaling.These novel materials are mostly not well researched, especially electronic transport is not yet understood. We aim at developing physical models describing the transport processes and transport-related phenomena (e.g. charge trapping, degradation). These models will subsequently be embedded in a kinetic Monte Carlo algorithm and incorporated into simulation tools. State-of-the-art zirconium-based dielectrics, now employed in the newest generation of processors and memory chips will be investigated by extensive comparison of simulations with experimental data to put the models to the test. Detailed sensitivity analysis of high-κ structures on experimentally hard to access parameters (e.g. interface roughness, defect density and distribution) will be carried out.The proposed theoretical activity is intended to provide backup to the characterization and fabrication activities carried out worldwide. Emphasis will be laid on the identification of scaling potentials and possible problem areas at an early stage of material development.

集成电路的继续小型化不可避免地需要用其他具有优异介电性能的绝缘体（即所谓的“高κ”电介质（κ：介电常数））取代SiO2。高κ的引入解决了半导体行业最紧迫的问题，即呈指数级增长的漏电流，从而实现了进一步的缩放。这些新型材料大多没有得到很好的研究，尤其是电子传输尚未被了解。我们的目标是开发描述传输过程和传输相关现象（例如电荷捕获、退化）的物理模型。这些模型随后将嵌入动力学蒙特卡罗算法中，并纳入模拟工具中。目前最新一代处理器和存储芯片中采用的最先进的锆基电介质将通过模拟与实验数据的广泛比较进行研究，以对模型进行测试。将对高κ结构对实验上难以获得的参数（例如界面粗糙度、缺陷密度和分布）进行详细的敏感性分析。所提出的理论活动旨在为全球范围内进行的表征和制造活动提供支持。重点将放在材料开发早期阶段识别扩展潜力和可能的问题领域。