Collaborative Research: Design, Modeling, Automation and Experimentation of Imperfection Immune Carbon Nanotube Field Effect Transitor Circuits
Collaborative Research: Design, Modeling, Automation and Experimentation of Imperfection Immune Carbon Nanotube Field Effect Transitor Circuits
批准号:
0702343
负责人:
Subhasish Mitra
金额:
$68.19万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2007
资助国家:
美国
项目状态:
已结题
起止时间:
2007-08-01 至 2011-07-31
中文摘要
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英文摘要
Collaborative Proposal ID: 0702343, 0702204PI name(s): Subhasish Mitra, Chongwu ZhouInstitution(s): Stanford University, University of Southerm CaliforniaTitle: Design, Modeling, Automation and Experimentation of Imperfection Immune Carbon Nanotube Field Effect Transitor CircuitsABSTRACT:One-dimensional nanodevices such as Carbon Nanotube Field-Effect Transistors (CNFETs) are promising candidates as extensions to traditional Silicon transistors due to excellent device performance. Device scaling of silicon transistors has been the fundamental basis for the phenomenal success of the semiconductor and electronics industry. While there have been significant accomplishments in scientific discovery in recent years at the single-device level at the nanoscale, a major gap exists between such single-device-level results and the research required to harness the science into practical design technologies competitive with silicon technologies at the end of device scaling. This project uses an interdisciplinary approach to overcome fundamental challenges by combining novel CNFET-based robust imperfection-immune design and automation techniques together with new CNFET modeling and processing techniques. The ideas developed in this project will be experimentally validated through working CNFET-based circuits. This research program also integrates research and education required to explore novel, nanoscale electronic designs through graduate and undergraduate training, and public education on nanotechnology.
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