FuSe-TG: The Future of Semiconductor Technologies for Computing through Device-Architecture-Application Co-Design
FuSe-TG:通过设备-架构-应用协同设计进行计算的半导体技术的未来
基本信息
- 批准号:2235329
- 负责人:
- 金额:$ 29.96万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2023
- 资助国家:美国
- 起止时间:2023-05-01 至 2025-04-30
- 项目状态:未结题
- 来源:
- 关键词:
项目摘要
A 2020 issue of Massachusetts Institute of Technology’s Tech Review read “[Moore’s law] has fueled prosperity of the last 50 years. But the end is now in sight.” However, this latter conclusion can be debated. Historically, exponential growth in semiconductors was achieved through two-dimensional (2D) miniaturization of devices (transistors, memory, and wires) to pack more components in the same chip area and achieve lower cost per function. Indeed, we are now reaching the physical limits of this 2D scaling paradigm. However, alternative approaches will trigger a seismic shift to reinvigorate the US semiconductor economy. This project will explore, identify, and map out the possible paths that lie ahead through partnerships among universities and industry/industrial research leaders in semiconductors, through educational efforts to translate new knowledge into the educational pipeline and semiconductor workforce, and through piloting new collaboration methods to enable lab-to-fab translation more readily with robust inputs from industry experts. This teaming grant will thus break new grounds for the future of semiconductors for domain-specific computing. The longer-term goal is to create national impact on research, education, and commercialization by encouraging students to follow a career path in semiconductors near national fab facilities. This is planned through multiple catalysts, e.g., a pilot program for lab and fab experiences for community college students, co-design challenges etc.In the past two decades, it has become increasingly untenable to create architectures and device technologies independent of one another because there are intertwined dependencies across the abstraction boundaries. In addition, because of the extreme energy efficiency demands of future systems, architectures and device technologies must be driven by the specific application domains at hand. Thus, the focus of this project is device-architecture-application co-design. Building in the third dimension (3D, like a high-rise), with ultra-dense vertical connectivity between 3D layers, could significantly increase the number of devices packed on a piece of chip real estate in a scalable manner for significant benefits in energy and throughput, as, e.g., used by the Stanford Nano-Engineered Computing Systems Technology (N3XT) 3D approach. Multiple N3XT 3D chips are to be integrated through a continuum of chip stacking-/interposer-/wafer-level assembly/ integration. The foundation for this teaming activities will be the MOnolithic Stacked, Assembled IC (MOSAIC) N3XT 3D concept. Rather than relying solely on silicon-based transistors to perform all desired functions, heterogeneous materials and customized device structures optimally designed to perform diverse/distinct functions, i.e., domain-specific device technologies, will be used. The project will explore new domain-specific architectures (e.g., targeting AI deep neural nets, augmented reality/virtual reality, and graph analytics) uniquely enabled by the technology concepts, new Electronic Design Automation tools, and new open-source frameworks for device-architecture-application co-design.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
马萨诸塞州理工学院2020年一期的《科技评论》写道:“[摩尔定律]推动了过去50年的繁荣。但结局已经近在眼前。”然而,后一个结论是可以辩论的。从历史上看,半导体的指数增长是通过器件(晶体管,存储器和导线)的二维(2D)小型化来实现的,以便在同一芯片面积中封装更多的组件并实现每功能更低的成本。事实上,我们现在正在达到这种2D缩放范例的物理极限。然而,替代方法将引发地震性转变,以重振美国半导体经济。该项目将探索,确定和绘制未来可能的路径,通过大学和半导体行业/工业研究领导者之间的合作伙伴关系,通过教育努力将新知识转化为教育管道和半导体劳动力,并通过试点新的合作方法,使实验室到工厂的翻译更容易与行业专家的强大投入。因此,这一团队资助将为特定领域计算半导体的未来开辟新的基础。长期目标是通过鼓励学生在国家晶圆厂附近的半导体领域走上职业道路,对研究、教育和商业化产生全国性的影响。这是通过多种催化剂规划的,例如,社区大学生的实验室和工厂经验的试点计划,共同设计挑战等。在过去的二十年里,创建彼此独立的架构和设备技术变得越来越站不住脚,因为在抽象边界上存在交织的依赖关系。此外,由于未来系统的极端能效要求,架构和设备技术必须由特定的应用领域驱动。因此,该项目的重点是设备架构应用程序的协同设计。在第三维(3D,如高层建筑)中构建,在3D层之间具有超密集的垂直连接,可以以可扩展的方式显著增加封装在一块芯片真实的地产上的器件的数量,以获得能量和吞吐量的显著益处,例如,由斯坦福大学纳米工程计算系统技术(N3 XT)3D方法使用。多个N3 XT 3D芯片将通过连续的芯片堆叠/插入器/晶圆级组装/集成进行集成。此次合作活动的基础将是单片堆叠组装IC(MOSAIC)N3 XT 3D概念。不是仅仅依赖于硅基晶体管来执行所有期望的功能,而是最佳地设计为执行多样化/不同的功能的异质材料和定制的器件结构,即,将使用特定领域的设备技术。该项目将探索新的特定领域架构(例如,针对人工智能深度神经网络、增强现实/虚拟现实和图形分析),该奖项反映了NSF的法定使命,并通过使用基金会的智力价值和更广泛的影响审查标准进行评估,被认为值得支持。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
数据更新时间:{{ journalArticles.updateTime }}
{{
item.title }}
{{ item.translation_title }}
- DOI:
{{ item.doi }} - 发表时间:
{{ item.publish_year }} - 期刊:
- 影响因子:{{ item.factor }}
- 作者:
{{ item.authors }} - 通讯作者:
{{ item.author }}
数据更新时间:{{ journalArticles.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ monograph.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ sciAawards.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ conferencePapers.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ patent.updateTime }}
Subhasish Mitra其他文献
Dendrite-inspired Computing to Improve Resilience of Neural Networks to Faults in Emerging Memory Technologies
树突启发计算可提高神经网络对新兴内存技术故障的恢复能力
- DOI:
- 发表时间:
2023 - 期刊:
- 影响因子:0
- 作者:
L. K. John;F. M. G. França;Subhasish Mitra;Zachary Susskind;P. M. V. Lima;Igor D. S. Miranda;E. B. John;Diego L. C. Dutra;M. Breternitz - 通讯作者:
M. Breternitz
Segregation of a Phosphorus Rich Phase During Differential Solidification of BOF Slag
- DOI:
10.1007/s11663-022-02586-3 - 发表时间:
2022-07-06 - 期刊:
- 影响因子:3.100
- 作者:
Thi Bang Tuyen Nguyen;Subhasish Mitra;Geoffrey M. Evans;Hamid Doostmohammadi;Brian J. Monaghan;Paul Zulli;Kyoung-oh Jang;Damien O’Dea;Tom Honeyands - 通讯作者:
Tom Honeyands
Measurement of gas dispersion parameters in a reflux flotation cell
回流浮选槽中气体分散参数的测量
- DOI:
10.1016/j.mineng.2025.109526 - 发表时间:
2025-10-01 - 期刊:
- 影响因子:5.000
- 作者:
Abdullaziz Glabe Zakari;Raju Chowdhury;Peter Ireland;Geoffrey Evans;Subhasish Mitra - 通讯作者:
Subhasish Mitra
Effect of bubble surface loading on bubble rise velocity
- DOI:
10.1016/j.mineng.2021.107252 - 发表时间:
2021-12-01 - 期刊:
- 影响因子:
- 作者:
Ai Wang;Mohammad Mainul Hoque;Roberto Moreno-Atanasio;Elham Doroodchi;Geoffrey Evans;Subhasish Mitra - 通讯作者:
Subhasish Mitra
Cooling future system-on-chips with diamond inter-tiers
使用金刚石中间层冷却未来片上系统
- DOI:
- 发表时间:
2023 - 期刊:
- 影响因子:8.9
- 作者:
M. Malakoutian;Anna Kasperovich;Dennis Rich;Kelly Woo;Christopher Perez;R. Soman;Devansh Saraswat;Jeong;Maliha Noshin;Michelle Chen;Sam Vaziri;Xinyu Bao;Che Chi Shih;W. Woon;M. Asheghi;Kenneth E. Goodson;S. Liao;Subhasish Mitra;Srabanti Chowdhury - 通讯作者:
Srabanti Chowdhury
Subhasish Mitra的其他文献
{{
item.title }}
{{ item.translation_title }}
- DOI:
{{ item.doi }} - 发表时间:
{{ item.publish_year }} - 期刊:
- 影响因子:{{ item.factor }}
- 作者:
{{ item.authors }} - 通讯作者:
{{ item.author }}
{{ truncateString('Subhasish Mitra', 18)}}的其他基金
Collaborative Research: SHF: Small: Quasi Weightless Neural Networks for Energy-Efficient Machine Learning on the Edge
合作研究:SHF:小型:用于边缘节能机器学习的准失重神经网络
- 批准号:
2326895 - 财政年份:2023
- 资助金额:
$ 29.96万 - 项目类别:
Standard Grant
E2CDA: Type I: Collaborative Research: Energy Efficient Learning Machines (ENIGMA)
E2CDA:类型 I:协作研究:节能学习机 (ENIGMA)
- 批准号:
1640078 - 财政年份:2016
- 资助金额:
$ 29.96万 - 项目类别:
Continuing Grant
Collaborative Research: Visual Cortex on Silicon
合作研究:硅上视觉皮层
- 批准号:
1317470 - 财政年份:2013
- 资助金额:
$ 29.96万 - 项目类别:
Continuing Grant
Workshop: Bugs and Defects in Electronic Systems: The Next Frontier
研讨会:电子系统中的错误和缺陷:下一个前沿
- 批准号:
1341270 - 财政年份:2013
- 资助金额:
$ 29.96万 - 项目类别:
Standard Grant
SHF:Medium:Collaborative Research: AgeELESS: Aging Estimation and Lifetime Enhancement in Silicon Systems
SHF:中:合作研究:AgeELESS:硅系统中的老化估计和寿命增强
- 批准号:
1161332 - 财政年份:2012
- 资助金额:
$ 29.96万 - 项目类别:
Continuing Grant
II-NEW: Robust Carbon Nanotube Technology for Energy-Efficient Computing Systems: A Processing and Design Infrastructure for Emerging Nanotechnologies
II-新:用于节能计算系统的稳健碳纳米管技术:新兴纳米技术的处理和设计基础设施
- 批准号:
1059020 - 财政年份:2011
- 资助金额:
$ 29.96万 - 项目类别:
Standard Grant
Collaborative Research: Variability-Aware Software for Efficient Computing with Nanoscale Devices
协作研究:利用纳米级设备进行高效计算的可变性感知软件
- 批准号:
1028831 - 财政年份:2010
- 资助金额:
$ 29.96万 - 项目类别:
Continuing Grant
Collaborative Research: Globally Optimized Robust Systems on Multi-Core Hardware
协作研究:多核硬件上的全局优化鲁棒系统
- 批准号:
0903459 - 财政年份:2009
- 资助金额:
$ 29.96万 - 项目类别:
Standard Grant
Collaborative Research:Design, Modeling, Automation and Experimentation of Nanoscale Computing Fabric using Carbon Nanotubes
合作研究:使用碳纳米管的纳米级计算结构的设计、建模、自动化和实验
- 批准号:
0726791 - 财政年份:2007
- 资助金额:
$ 29.96万 - 项目类别:
Standard Grant
相似国自然基金
小白链霉菌TG02的ε-聚赖氨酸合成代谢调控机制研究
- 批准号:2025JJ60150
- 批准年份:2025
- 资助金额:0.0 万元
- 项目类别:省市级项目
小肠定向黏附型 TG-RosA 双相脂质体水凝胶
递送及转运的分子机制
- 批准号:R24C200014
- 批准年份:2024
- 资助金额:0.0 万元
- 项目类别:省市级项目
TG酶交联对β型球蛋白致敏性的影响机制研究
- 批准号:
- 批准年份:2024
- 资助金额:0.0 万元
- 项目类别:省市级项目
sTREM2通过TG2抑制神经元内tau蛋白磷酸化的机制研究
- 批准号:82301356
- 批准年份:2023
- 资助金额:30 万元
- 项目类别:青年科学基金项目
多模态超声联合FNA-Tg评估分化型甲状腺癌颈部转移淋巴结
- 批准号:2023JJ50385
- 批准年份:2023
- 资助金额:0.0 万元
- 项目类别:省市级项目
新型扭转解聚生物正交激活探针用于TG2调控胃癌血管生成的可视化研究
- 批准号:n/a
- 批准年份:2023
- 资助金额:30.0 万元
- 项目类别:省市级项目
LncRNA编码肽EDP14的发现及调控TG2入核抑制血管平滑肌细胞表型转化在主动脉夹层进展中的作用机制研究
- 批准号:82370482
- 批准年份:2023
- 资助金额:49 万元
- 项目类别:面上项目
用于内窥镜柔性压阻传感器高Tg压敏复合材料的力学设计与制备
- 批准号:LZ23A020005
- 批准年份:2023
- 资助金额:0.0 万元
- 项目类别:省市级项目
双靶向CSPG4/CD126嵌合抗原受体修饰的复制缺失型弓形虫减毒活疫苗(CAR-Tg)抗恶性黑色素瘤的效应及机制研究
- 批准号:32370997
- 批准年份:2023
- 资助金额:50 万元
- 项目类别:面上项目
TG2调控白血病干细胞的生物力学特性及干性维持
- 批准号:82370159
- 批准年份:2023
- 资助金额:49 万元
- 项目类别:面上项目
相似海外基金
口腔に分布する新規抗菌物質6-TG産生ブドウ菌種の探索と分子疫学的解析
口腔中分布的新型抗菌物质产6-TG葡萄球菌的寻找及分子流行病学分析
- 批准号:
24K13012 - 财政年份:2024
- 资助金额:
$ 29.96万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
FuSe-TG: Ultra-low-power and Robust Autonomy of Edge Robotics with 2D Semiconductors
FuSe-TG:采用 2D 半导体的边缘机器人的超低功耗和鲁棒自主性
- 批准号:
2235207 - 财政年份:2023
- 资助金额:
$ 29.96万 - 项目类别:
Standard Grant
FuSe-TG: Co-Design of Germanium Oxide-based Semiconductors from Deposition to Devices
FuSe-TG:氧化锗基半导体从沉积到器件的协同设计
- 批准号:
2235208 - 财政年份:2023
- 资助金额:
$ 29.96万 - 项目类别:
Standard Grant
FuSe-TG: Physical Computing Co-Design using Three-terminal Devices
FuSe-TG:使用三端设备的物理计算协同设计
- 批准号:
2235316 - 财政年份:2023
- 资助金额:
$ 29.96万 - 项目类别:
Standard Grant
FuSe-TG: FAB: A Heterogeneous Ferroelectronics Platform for Accelerating Big Data Analytics
FuSe-TG:FAB:加速大数据分析的异构铁电子平台
- 批准号:
2235366 - 财政年份:2023
- 资助金额:
$ 29.96万 - 项目类别:
Standard Grant
FuSe-TG: Reconfigurable Threshold Logic via Flexible Thin Film Electronics: A Pathway to Semiconductor Workforce Development
FuSe-TG:通过柔性薄膜电子器件的可重构阈值逻辑:半导体劳动力发展的途径
- 批准号:
2235385 - 财政年份:2023
- 资助金额:
$ 29.96万 - 项目类别:
Standard Grant
FuSe-TG: Open, Multiscale, Application-Agnostic Platform for Heterogeneous System-in-Package Co-Design
FuSe-TG:开放、多尺度、与应用无关的异构系统级封装协同设计平台
- 批准号:
2235414 - 财政年份:2023
- 资助金额:
$ 29.96万 - 项目类别:
Standard Grant
FuSe-TG: Co-design based Wide bandgap Semiconductor Research Center
FuSe-TG:基于协同设计的宽带隙半导体研究中心
- 批准号:
2235373 - 财政年份:2023
- 资助金额:
$ 29.96万 - 项目类别:
Standard Grant
FuSe-TG: Monolithic Heterointegration of GeSn and SiGeSn Alloys with Silicon Platforms
FuSe-TG:GeSn 和 SiGeSn 合金与硅平台的单片异质集成
- 批准号:
2235447 - 财政年份:2023
- 资助金额:
$ 29.96万 - 项目类别:
Standard Grant
FuSe-TG: Co-designing Novel Memristor Heterostructures for Brain Inspired Computers
FuSe-TG:为类脑计算机共同设计新型忆阻器异质结构
- 批准号:
2235474 - 财政年份:2023
- 资助金额:
$ 29.96万 - 项目类别:
Standard Grant