SBIR Phase I: CVD Growth of Silicon Nanocables Using Patterned Silicon Dioxide Mask

SBIR 第一阶段：使用图案化二氧化硅掩模进行硅纳米电缆的 CVD 生长

• 批准号: 0712688
• 负责人: Ruxandra Vidu
• 金额: $ 10万
• 依托单位: Q1 NanoSystems Corp
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2007
• 资助国家: 美国
• 起止时间: 2007-07-01 至 2007-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0712688&HistoricalAwards=false
• 关键词: SBIR; Phase; CVD; Growth; Silicon

This Small Business Innovation Research Phase I project will assess the feasibility of a new fabrication method for high-density p-n silicon nanocable arrays using CVD techniques. This project aims to create grow p-silicon nanowire arrays using a patterned mask that will enable highly ordered and perfectly oriented nanowires, which cannot be achieved through conventional methods. On these nanowires, CVD will be used to grow n-silicon layers radially, resulting in high-quality single-crystal structures. The aim is to demonstrate high quality semiconductor junctions integrated in a nanocable array structure. Techniques to control and characterize the p-n Si nanocables obtained by CVD are the primary focus of this proposal. It is the only technology known that may allow controlled orientation of nanostructures and integration of the p-n junction in the nanowire itself, with precision growth that prevents structures from shorting against one another. Techniques to control and verify the quality of surfaces and interfaces are especially important when the subsequent layers are extremely thin, as is the case in this solar cell design. The results lay the foundation for creating highly-flexible nanostructure array templates and arrays. Although targeted at solar cells, this research has broad applicability in nanoelectronics and nanofabrication. The result will be arrays of complex nanostructures that can be insulated from one another. Controlling the quality, composition and dimensions of nanowires that allow ultra-thin layers deposited thereon allows creating nanostructured materials that are tunable for key nanoscale properties at low cost. This enables applications not possible with bulk materials. These processes should allow low-cost continuous fabrication of nanostructure of dimensions and density not possible using current commercial membranes. Nanostructured devices, rather than bulk materials, are the key to realizing economical, reliable, high performance solar cells. Results will be arrays of discrete structures but the same techniques are applicable to circuitry, sensors, and optical applications.

这个小企业创新研究第一阶段项目将评估一种新的制造方法的可行性高密度p-n硅纳米电缆阵列使用CVD技术。该项目旨在使用图案化掩模创建生长p-硅纳米线阵列，这将使纳米线高度有序和完美取向，这是通过传统方法无法实现的。在这些纳米线上，CVD将用于径向生长n-硅层，从而产生高质量的单晶结构。其目的是展示高品质的半导体结集成在纳米电缆阵列结构。控制和表征通过CVD获得的p-n Si纳米电缆的技术是该提议的主要焦点。这是唯一已知的技术，可以允许纳米结构的控制取向和纳米线本身中的p-n结的集成，精确生长，防止结构彼此短路。当后续层极薄时，控制和验证表面和界面质量的技术尤为重要，就像这种太阳能电池设计中的情况一样。该结果为制备高度柔性的纳米结构阵列模板和阵列奠定了基础。虽然针对太阳能电池，但这项研究在纳米电子学和纳米纤维方面具有广泛的适用性。其结果将是复杂的纳米结构阵列，可以彼此绝缘。控制纳米线的质量、组成和尺寸，允许在其上沉积超薄层，从而允许以低成本创建可针对关键纳米级特性进行调节的纳米结构材料。这使得应用不可能与散装材料。这些方法应允许低成本连续制造使用当前商业膜不可能的尺寸和密度的纳米结构。纳米结构的器件，而不是块体材料，是实现经济、可靠、高性能太阳能电池的关键。结果将是离散结构的阵列，但相同的技术适用于电路，传感器和光学应用。