GOALI: Low-Dimensional Plasmonic Semiconductor Materials

目标：低维等离子体半导体材料

• 批准号: 0907381
• 负责人: Jonathan Spanier
• 金额: $ 46.81万
• 依托单位: Drexel University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2009
• 资助国家: 美国
• 起止时间: 2009-07-01 至 2013-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0907381&HistoricalAwards=false
• 关键词: GOALI; Low; Dimensional; Plasmonic; Semiconductor

Technical: In this Grant Opportunities for Academic Liaison with Industry (GOALI) project, the growth and collective electronic excitation properties of quasi-one-dimensional semiconductor materials are investigated. The vapor-phase growth of multi-component, uniform- and tapered-diameter nanowires of group III-V semiconducting materials uses the technique of metallorganic chemical vapor disposition. The structural, electronic, and optical properties of the nanowires are investigated using high-resolution electron microscopy, optical excitation spectroscopies, resonant Raman scattering, and proximal characterization methods. These studies are to elucidate how topological driven strain, surface and interface structure, and band structure, and band bending influence the presence and properties of collective electronic excitation within semiconductor heterostructure materials systems. The research projects are carried out collaboratively among students and faculty at Drexel University and industrial scientists at Structured Materials Industries, Inc. (SMI). The research goal of this project is to understand how multi-component group III-V based semiconductor nanowire materials can be grown and processed in a manner that they enable confinement and control of charge-density waves for the purpose of tunable, resonant terahertz detection and emission. Non-technical: The project addresses basic research issues in a topical area of materials science with high technological relevance. The fabrication of semiconductor nanowires and study of their collective electronic excitations and their response to electromagnetic waves would lead to applications in advancing the state-of-the-art in the fast and sensitive detection of terahertz and charged-particle radiation. This GOALI project provides opportunities for graduate and undergraduate students to receive training and accrue experience over extended stays in an industrial setting in areas highly relevant to their research and career interests. The project will also include international collaboration with scientists in Italy.

技术：在这个学术联系机会(GOALI)项目中，研究了准一维半导体材料的生长和集体电子激发特性。气相生长III-V族半导体材料的多组分、直径均匀和锥形的纳米线采用金属有机化学气相处理技术。用高分辨电子显微镜、光激发光谱、共振拉曼散射和近邻表征方法研究了纳米线的结构、电子和光学性质。这些研究旨在阐明拓扑驱动应变、表面和界面结构、能带结构和能带弯曲对半导体异质结构材料体系中集体电子激发的存在和性质的影响。这些研究项目是在德雷克塞尔大学的学生和教职员工以及结构材料工业公司(SMI)的工业科学家之间合作进行的。该项目的研究目标是了解如何生长和加工基于III-V族多组分的半导体纳米线材料，使其能够限制和控制电荷密度波，以实现可调、共振太赫兹的探测和发射。非技术性：该项目解决了材料科学中具有高度技术相关性的专题领域的基础研究问题。半导体纳米线的制备及其集体电子激发和对电磁波响应的研究将在快速、灵敏地检测太赫兹和带电粒子辐射方面具有重要的应用价值。这一目标项目为研究生和本科生提供了在与他们的研究和职业兴趣高度相关的领域长期停留在工业环境中接受培训和积累经验的机会。该项目还将包括与意大利科学家的国际合作。