NEB: Meta-Capacitance and Spatially Periodic Electronic Excitation Devices (MC-SPEEDs)

NEB：元电容和空间周期电子激励装置 (MC-SPEED)

• 批准号: 1124696
• 负责人: Jonathan Spanier
• 金额: $ 170万
• 依托单位: Drexel University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2011
• 资助国家: 美国
• 起止时间: 2011-09-15 至 2016-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1124696&HistoricalAwards=false
• 关键词: NEB; Meta; Capacitance; Spatially; Periodic

This project is awarded under the Nanoelectronics for 2020 and Beyond competition, with support by multiple Directorates and Divisions at the National Science Foundation as well as by the Nanoelectronics Research Initiative of the Semiconductor Research Corporation.TECHNICAL: The goal of this project is to create a new generation of low-power, high on-off current ratio, fast response switches. Field effect transistor (FET) switches are ubiquitous in the semiconductor industry, yet conventional FETs are constrained by the fundamental size, power and speed limits of electrons moving through silicon channels and manipulated by electrostatic gates. This project focuses on creating transistors that bypass these limits by incorporating novel channel and gate materials, and in which exotic electronic states can be manipulated. In particular, transistors are created by integrating high-mobility two-dimensional electronic channels - such as exist in a single atomic layer of carbon, or graphene - with multifunctional (e.g., electro-mechanical, magnetic) gates. These devices are then used to investigate enhanced switching capabilities - including those possessing novel charge-accumulating and storage characteristics, the use of low-loss collective excitations as a replacement to dissipative charge transport in FETs, and the development of large fan-out switches based on these concepts. The device architecture envisioned in this project provides an adaptable and reconfigurable platform capable of meeting multiple application demands and evolving with time to provide a test-bed for next generation computing, data storage, and sensing devices. Results will be achieved by close collaborations within a multidisciplinary team of materials scientists, chemists, and physicists from three universities (Drexel University, University of Illinois at Urbana-Champaign, and University of Pennsylvania), who work together on first principles-based materials design, measurements, device fabrication and analysis.NON-TECHNICAL: The success of this project can lead to a new paradigm in future nanoelectronics with impact on many applications of technological and economic importance. Concepts developed here enable devices having multiple capabilities and re-configurability, and therefore high functional density that may be attractive for computing, data storage, sensor, and other technologies. The combination of computational approaches, materials synthesis, characterization and nano-fabrication targeted at bringing together novel materials - such as graphene and multifunctional oxides - is expected to bridge multidisciplinary areas, thus opening up exciting opportunities to discover new phenomena. The multi-faceted challenges to be tackled in this project provide ample educational and training opportunities for both undergraduate and graduate students for emerging interdisciplinary fields. Leveraging PIs' ongoing efforts and involvements in organizations promoting diversity, students from underrepresented groups are aggressively recruited with the aid of multi-campus summer research opportunities to be created through this project. The PIs are also dedicated to bringing the state-of-the-art research into the classroom, and advances made here enrich curricula of courses that the PIs teach. With the aid of extensive outreach infrastructure available across the three institutions involved, the PIs leverage results from this project to advocate nanoscience and technology to groups ranging from high school students and teachers to the general public.

该项目是在美国国家科学基金会多个部门和部门以及半导体研究公司纳米电子研究计划的支持下，在Nanoelectronics for 2020 and Beyond竞赛下获得的。技术：该项目的目标是创造新一代低功耗，高开关电流比，快速响应开关。场效应晶体管（FET）开关在半导体工业中是普遍存在的，然而常规FET受到移动通过硅沟道并由静电栅极操纵的电子的基本尺寸、功率和速度限制的约束。该项目的重点是通过引入新的沟道和栅极材料来创建绕过这些限制的晶体管，并且可以操纵奇异的电子状态。特别地，通过将高迁移率二维电子沟道（诸如存在于碳或石墨烯的单个原子层中）与多功能（例如，机电、磁）门。 然后，这些设备被用来调查增强的开关能力-包括那些拥有新颖的电荷积累和存储特性，使用低损耗集体激励作为替代场效应晶体管中的耗散电荷传输，以及基于这些概念的大扇出开关的发展。该项目中设想的设备架构提供了一个可适应和可重新配置的平台，能够满足多种应用需求，并随着时间的推移而发展，为下一代计算，数据存储和传感设备提供测试平台。结果将通过来自三所大学的材料科学家，化学家和物理学家的多学科团队的密切合作来实现（德雷塞尔大学、伊利诺伊大学厄巴纳-香槟分校和宾夕法尼亚大学），他们共同致力于基于第一原理的材料设计、测量、器件制造和分析。该项目的成功可能会导致未来纳米电子学的新范式，对许多具有技术和经济重要性的应用产生影响。这里开发的概念使得设备能够具有多种能力和可重新配置性，并且因此具有高功能密度，这对于计算、数据存储、传感器和其他技术可能是有吸引力的。计算方法、材料合成、表征和纳米制造的结合，旨在将石墨烯和多功能氧化物等新型材料汇集在一起，有望弥合多学科领域，从而为发现新现象提供令人兴奋的机会。在这个项目中要解决的多方面的挑战为本科生和研究生提供了充足的教育和培训机会，新兴的跨学科领域。利用PI的持续努力和参与促进多样性的组织，来自代表性不足群体的学生在多校区暑期研究机会的帮助下积极招募，通过这个项目创建。PI还致力于将最先进的研究带入课堂，这里取得的进展丰富了PI教授的课程。在三个相关机构广泛的外联基础设施的帮助下，PI利用该项目的成果，向从高中学生和教师到普通公众的群体宣传纳米科学和技术。