I-Corps: Low-energy manufacturing-scalable complex oxide thin film technology

I-Corps：低能耗制造-可扩展的复合氧化物薄膜技术

• 批准号: 1403463
• 负责人: Jonathan Spanier
• 金额: $ 5万
• 依托单位: Drexel University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2014
• 资助国家: 美国
• 起止时间: 2014-05-01 至 2015-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1403463&HistoricalAwards=false
• 关键词: Corps; Low; energy; manufacturing; scalable

The team has developed a new thin-film deposition technology for high-performance materials that is low energy, scalable, and potentially low cost. They recently reported via publication the formation of complex oxide perovskites in single crystalline hetero-epitaxial form and also specifically BiFeO3 in phase-pure polycrystalline form on SiO2/Si. This is important because the new technology enables production of a simple perovskite Pb-free single-crystal functional complex oxide films with crystalline quality, nanoscale control, and physical properties comparable to those obtained using much more expensive tools and processes. This technology could also be highly enabling in that it utilizes atomic layer deposition, thereby permitting conformal growth on high surface area per unit volume structures, and therefore a three- dimensional architecture may be realized. Replacement of Pb with Bi in these film structures gives a ferroelectric polarization with a larger charge per unit area, potentially enabling enhancements in device performance (e.g. non-volatile memory, wireless communications, and capacitors for energy storage). Scaling and the roadmap is currently limited by MOCVD (and ALD) using lead zirconate titanate (PZT) because of inhomogeneities in Zr and Ti that result in nanoscale conformally-coated 3D structures that result in unacceptable variations in properties/performance. Thus, a process that uses a simple perovskite material would address this issue, particularly if it can outperform PZT. The customer need also relates to a technology that can deliver reduction in the use and waste disposal of Pb and Pb-based precursors, reduction in manufacturing cost through innovations in thin film deposition and process technology to reduce precursor waste, and an opportunity to increase the performance of existing technologies through a replacement material that has higher FE polarization (and therefore induced charge) and a process technology that is truly compatible with finer 3D nanoscale architectures to support scaling to future nodes.

该团队开发了一种用于高性能材料的新型薄膜沉积技术，该技术具有低能耗、可扩展性和潜在的低成本等特点。他们最近通过出版物报道了在SiO2/Si上形成单晶异质外延形式的复合氧化物钙钛矿，以及特别是纯相多晶形式的BiFeO 3。这一点很重要，因为新技术能够生产简单的钙钛矿无铅单晶功能复合氧化物薄膜，其晶体质量，纳米级控制和物理性能与使用更昂贵的工具和工艺获得的薄膜相当。该技术还可以是高度可行的，因为其利用原子层沉积，从而允许在每单位体积结构的高表面积上共形生长，并且因此可以实现三维架构。在这些膜结构中用Bi替代Pb给出了具有每单位面积更大电荷的铁电极化，潜在地使得能够增强器件性能（例如，非易失性存储器、无线通信和用于能量存储的电容器）。缩放和路线图目前受到使用锆钛酸铅（PZT）的MOCVD（和ALD）的限制，因为Zr和Ti的不均匀性导致纳米级共形涂覆的3D结构，这导致性质/性能的不可接受的变化。因此，使用简单的钙钛矿材料的工艺将解决这个问题，特别是如果它可以优于PZT。客户的需求还涉及一种技术，该技术可以减少Pb和Pb基前体的使用和废物处理，通过薄膜沉积和工艺技术的创新减少制造成本以减少前体废物，并且有机会通过具有更高FE极化的替代材料来提高现有技术的性能（以及因此产生的感应电荷）以及真正与更精细的3D纳米级架构兼容的工艺技术，以支持扩展到未来的节点。