I-Corps: Low-energy manufacturing-scalable complex oxide thin film technology

I-Corps：低能耗制造-可扩展的复合氧化物薄膜技术

• 批准号: 1403463
• 负责人: Jonathan Spanier
• 金额: $ 5万
• 依托单位: Drexel University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2014
• 资助国家: 美国
• 起止时间: 2014-05-01 至 2015-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1403463&HistoricalAwards=false
• 关键词: Corps; Low; energy; manufacturing; scalable

The team has developed a new thin-film deposition technology for high-performance materials that is low energy, scalable, and potentially low cost. They recently reported via publication the formation of complex oxide perovskites in single crystalline hetero-epitaxial form and also specifically BiFeO3 in phase-pure polycrystalline form on SiO2/Si. This is important because the new technology enables production of a simple perovskite Pb-free single-crystal functional complex oxide films with crystalline quality, nanoscale control, and physical properties comparable to those obtained using much more expensive tools and processes. This technology could also be highly enabling in that it utilizes atomic layer deposition, thereby permitting conformal growth on high surface area per unit volume structures, and therefore a three- dimensional architecture may be realized. Replacement of Pb with Bi in these film structures gives a ferroelectric polarization with a larger charge per unit area, potentially enabling enhancements in device performance (e.g. non-volatile memory, wireless communications, and capacitors for energy storage). Scaling and the roadmap is currently limited by MOCVD (and ALD) using lead zirconate titanate (PZT) because of inhomogeneities in Zr and Ti that result in nanoscale conformally-coated 3D structures that result in unacceptable variations in properties/performance. Thus, a process that uses a simple perovskite material would address this issue, particularly if it can outperform PZT. The customer need also relates to a technology that can deliver reduction in the use and waste disposal of Pb and Pb-based precursors, reduction in manufacturing cost through innovations in thin film deposition and process technology to reduce precursor waste, and an opportunity to increase the performance of existing technologies through a replacement material that has higher FE polarization (and therefore induced charge) and a process technology that is truly compatible with finer 3D nanoscale architectures to support scaling to future nodes.

该团队开发了一种新的高性能材料薄膜沉积技术，该技术具有低能耗、可扩展和潜在的低成本。他们最近通过出版物报道了在SiO2/Si上形成单晶异质外延形式的复合氧化物钙钛矿，特别是形成相纯多晶形式的BiFeO3。这一点很重要，因为新技术能够生产出简单的钙钛矿无铅单晶功能复合氧化物膜，其晶体质量、纳米级控制和物理性能可与使用更昂贵的工具和工艺获得的膜相媲美。该技术还可以高度实现，因为它利用原子层沉积，从而允许在单位体积结构的高表面积上保形生长，因此可以实现三维结构。在这些薄膜结构中，用Bi代替Pb会产生铁电极化，每单位面积的电荷更大，有可能增强设备性能（例如，非易失性存储器、无线通信和用于储能的电容器）。缩放和路线图目前受到使用锆钛酸铅（PZT）的MOCVD（和ALD）的限制，因为Zr和Ti的不均匀性导致纳米级的共形涂层3D结构，导致性能/性能的不可接受的变化。因此，使用简单的钙钛矿材料的工艺将解决这个问题，特别是如果它可以胜过PZT。客户的需求还涉及一种技术，该技术可以减少铅和铅基前驱体的使用和废物处理，通过薄膜沉积和工艺技术的创新来减少前驱体废物，从而降低制造成本。并且有机会通过具有更高FE极化（因此具有感应电荷）的替代材料和与更精细的3D纳米级架构真正兼容的工艺技术来提高现有技术的性能，以支持扩展到未来节点。