GOALI/FRG: The Oxidation of Silicon Carbide and Structure-Defects-Mobility Relations

GOALI/FRG：碳化硅的氧化和结构-缺陷-迁移率关系

• 批准号: 0907385
• 负责人: Sokrates Pantelides
• 金额: $ 155.64万
• 依托单位: Vanderbilt University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2009
• 资助国家: 美国
• 起止时间: 2009-09-15 至 2014-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0907385&HistoricalAwards=false
• 关键词: GOALI; FRG; Oxidation; Silicon; Carbide

NON-TECHNICAL ABSTRACTSilicon-based electronic devices are the main component in virtually all microelectronic applications, e.g., computers and computer chips that are everywhere in cars, appliances, etc. For high-power and high-temperature uses, however, e.g., on-engine chips, power grid controls, etc. Si-based electronics are either inefficient or not usable at all. Silicon carbide is the most promising alternative, but, despite major advances in the last decade, including breakthroughs by the present team, difficult technical problems remain to be resolved. The proposed research addresses these issues with a mix of experimental and theoretical techniques. At the heart of the difficulties is the interface between silicon carbide and its native oxide, namely silicon dioxide, and the impact of the oxidation process on the underlying crystalline material. The expected results will be relevant to the broader field of the oxidation of diverse materials. Educational outreach projects will highlight to high school teachers and students the special needs of high-power, high-temperature electronics and the impact of research advances in important applications. TECHNICAL ABSTRACTSilicon carbide is a promising alternative to Si for high-temperature, high-power electronics because of its larger energy gap and heat-conduction coefficient, but also because its native oxide is silicon dioxide. The SiC/SiO2 interface, however, is more complex that the Si/SiO2 interface, which is at the heart of Si-based electronics. The main problem is that oxidation releases C atoms, some of which are stuck at the interface as defects. Despite major advances in passivating defects at the SiC/SiO2 by N and H, including breakthroughs by the present team, electron mobility remains lower than desirable for applications. Recent evidence points to subtle changes in the underlying SiC substrate. The proposed research will combine state-of-the-art microscopy, electrical measurements, and theory to elucidate the oxidation process at the atomic scale, identify the origins of undesirable effects and defects, and identify new design specifications to improve carrier mobilities. Extensive education outreach will make advances accessible to high schools and the community.

非技术摘要硅基电子器件是几乎所有微电子应用中的主要部件，在汽车、电器等中随处可见的计算机和计算机芯片。然而，对于高功率和高温用途，例如，发动机上芯片、电网控制等。硅基电子器件要么效率低下，要么根本无法使用。碳化硅是最有前途的替代品，但是，尽管在过去十年中取得了重大进展，包括本团队的突破，但困难的技术问题仍有待解决。拟议的研究解决了这些问题的实验和理论技术的组合。困难的核心是碳化硅与其原生氧化物（即二氧化硅）之间的界面，以及氧化过程对底层晶体材料的影响。预期的结果将与更广泛的不同材料的氧化领域有关。教育推广项目将向高中教师和学生强调高功率、高温电子产品的特殊需求以及重要应用研究进展的影响。技术摘要碳化硅是高温、高功率电子器件中硅的一种有前途的替代品，因为它具有更大的能隙和导热系数，而且还因为它的天然氧化物是二氧化硅。然而，SiC/SiO2界面比Si/SiO2界面更复杂，Si/SiO2界面是Si基电子器件的核心。主要问题是氧化释放出C原子，其中一些作为缺陷粘在界面上。尽管在通过N和H钝化SiC/SiO2缺陷方面取得了重大进展，包括本团队的突破，但电子迁移率仍然低于应用所需的水平。最近的证据表明，在下面的SiC衬底的微妙变化。拟议的研究将结合联合收割机国家的最先进的显微镜，电气测量和理论，以阐明在原子尺度上的氧化过程，确定不良影响和缺陷的起源，并确定新的设计规范，以提高载流子迁移率。广泛的教育推广将使高中和社区能够获得进步。