Modeling Transport in Nanoscale MOSFETs - Meeting The Challenges of Next-Generation Devices

纳米级 MOSFET 中的传输建模 - 应对下一代器件的挑战

• 批准号: 0524655
• 负责人: Sokrates Pantelides
• 金额: $ 20.99万
• 依托单位: Vanderbilt University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2005
• 资助国家: 美国
• 起止时间: 2005-09-01 至 2008-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0524655&HistoricalAwards=false
• 关键词: Modeling; Transport; Nanoscale; MOSFETs; Meeting

The objective of this research is to pursue calculations of channel mobilities and gate oxide tunneling in nanoscale metal-oxide-semiconductor structures with full quantum-mechanical rigor and atomic-scale detail. This research carves new ground in frontier applications of first-principles quantum mechanical calculations. The approach to mobility calculations is based on Density Functional Theory, accurate atomic-scale device structures, and a novel Green's function technique. Tunneling currents through the gate dielectric will be calculated using novel transport methods developed recently for transport through single molecules. The results will be validated against experimental data through collaborations with three experimental groups and will ultimately be cast in forms that will be suitable for incorporation in compact models for circuit modeling so that they can serve in the design of emerging technologies. This research identifies key issues that need to be addressed for modeling transport properties in nanoscale devices that are likely to dominate nanoelectronics in the next decade. Through a collaboration with experimental researchers and engineering device modeling groups, the methods will be validated and integrated into modeling tools for next-generation microelectronics. Device modeling enables the rapid development and introduction of new technologies in the semiconductor industry, benefiting the industry and society through reduced cost and improved performance. This research promotes and relies upon the cross-disciplinary education of graduate and undergraduate students in areas bridging atomic-scale physics and electrical engineering. A local high school physics teacher will be engaged in the research to encapsulate the results in modules suitable for high schools and the general public.

本研究的目的是追求在纳米级金属氧化物半导体结构的沟道迁移率和栅极氧化物隧穿的计算与完整的量子力学的严格性和原子尺度的细节。 这项研究为第一性原理量子力学计算的前沿应用开辟了新天地。 迁移率计算的方法是基于密度泛函理论，精确的原子尺度器件结构，和一种新的绿色函数技术。 通过栅极电介质的隧道电流将使用新的运输方法最近开发的单分子运输计算。通过与三个实验组的合作，将根据实验数据对结果进行验证，并最终以适合于集成到电路建模的紧凑模型中的形式进行铸造，以便它们可以用于新兴技术的设计。这项研究确定了需要解决的关键问题，在纳米级器件的传输特性建模可能会在未来十年主导纳米电子学。 通过与实验研究人员和工程设备建模小组的合作，这些方法将被验证并集成到下一代微电子的建模工具中。 器件建模使半导体行业能够快速开发和引入新技术，通过降低成本和提高性能使行业和社会受益。 这项研究促进和依赖于跨学科的研究生和本科生的教育领域的桥梁原子尺度物理和电气工程。当地一名高中物理老师将参与这项研究，将结果封装到适合高中和公众的模块中。