GOALI/FRG: Epitaxial Growth of Perovskite Films and Heterostructures by Atomic Layer Deposition and Molecular Beam Epitaxy
GOALI/FRG:通过原子层沉积和分子束外延来外延生长钙钛矿薄膜和异质结构
基本信息
- 批准号:1006725
- 负责人:
- 金额:$ 51.55万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Continuing Grant
- 财政年份:2010
- 资助国家:美国
- 起止时间:2010-07-01 至 2013-06-30
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
NON-TECHNICAL DESCRIPTION: The semiconductor industry is responsible for much of the world's extraordinary economic expansion over the past fifty years. Continuing the pace of growth and innovation will require new materials, such as crystalline perovskite films that are monolithically integrated with silicon, to be discovered, and efficient processes for their manufacture to be developed. These new material systems present an ideal platform to explore the fundamental materials physics and have numerous potential technology applications. This research develops a chemical route to the growth of these perovskite materials that will enable their insertion into technology applications in the commercial sector. The research combines an interdisciplinary team using a synergistic combination of epitaxial growth, ab initio theory, and in situ characterization as it develops a fundamental framework for growth of perovskite materials. The program partners university researchers with a technology leader in embedded semiconductors to broaden the student experience as they are exposed to problem definition that keeps the end goal of developing a viable technology front and center. The outreach program is aimed at attracting female high-school students to physical sciences and engineering; in collaboration with the physics instructors in local high schools, the students spend summers in research groups at the University of Texas at Austin and participate in "real science" in a supportive environment.TECHNICAL DETAILS: Monolithically integrated hybrid oxide/semiconductor systems employing crystalline perovskite layers present an ideal platform to explore the fundamental materials physics determining electronic and magnetic properties of multiferroic heterostructures, and when integrated with semiconductors, potentially have applications in advanced electronics, hyperspectral sensors, and persistent surveillance and radar technologies. Discovery of materials and their fundamental properties will rely on molecular beam epitaxy (MBE) growth of limited volumes of materials; however, chemical routes, such as atomic layer deposition (ALD) need to be explored in parallel to enable lower cost manufacturing routes, growth over large area substrates, and potentially easier insertion of multifunctional oxide technology applications into the commercial sector. The research develops a fundamental framework for the growth of homo- and heteroepitaxial perovskite films that is built on theory and experimental validation, develops chemical routes centered on ALD, and explores the defect nature of the films and interfaces through spectroscopic and diffraction techniques. The focus is on ALD; MBE is used to complement the samples grown by ALD and to prepare surfaces upon which to initiate ALD or follow the detailed steps in layer growth during ALD. Studies explore growth of SrTiO3, LaAlO3 and (Ba,Sr)TiO3 films and heterostructures. Students use an integrated facility that permits in situ growth by MBE and ALD, and in situ characterization using scanning probes, and electron, X-ray and photon spectroscopies.
非技术描述:在过去的五十年里,半导体产业为世界上非凡的经济扩张贡献了很大一部分力量。继续增长和创新的步伐将需要发现新的材料,如与硅单片集成的晶体钙钛矿膜,并开发高效的制造工艺。这些新材料体系为探索基础材料物理提供了一个理想的平台,并具有许多潜在的技术应用。这项研究开发了一条生长这些钙钛矿材料的化学路线,使它们能够插入到商业领域的技术应用中。这项研究结合了一个跨学科的团队,利用外延生长、从头算理论和原位表征的协同组合,为钙钛矿材料的生长开发了一个基本框架。该项目将大学研究人员与一家嵌入式半导体领域的技术领先者合作,以拓宽学生的体验,因为他们面临的问题定义保持着开发可行的技术前沿和中心的最终目标。该推广计划旨在吸引女高中生学习物理科学和工程;与当地高中的物理教师合作,学生们在得克萨斯大学奥斯汀分校的研究小组中度过暑假,并在支持性环境中参与“真正的科学”。技术细节:采用结晶钙钛矿层的单片集成氧化物/半导体混合系统为探索决定多铁异质结构电和磁性能的基本材料物理提供了理想的平台,当与半导体集成时,可能会在先进电子、高光谱传感器以及持续监视和雷达技术中应用。材料及其基本性能的发现将依赖于有限数量材料的分子束外延(MBE)生长;然而,需要并行探索原子层沉积(ALD)等化学路线,以实现更低成本的制造路线,在大面积衬底上生长,并可能更容易将多功能氧化物技术应用插入商业部门。该研究在理论和实验验证的基础上建立了同质和异质外延钙钛矿薄膜生长的基本框架,开发了以ALD为中心的化学路线,并通过光谱和衍射技术探索了薄膜和界面的缺陷性质。重点放在ALD上;分子束外延用于补充ALD生长的样品,并在其上准备表面以启动ALD或在ALD期间遵循层生长的详细步骤。研究探索了SrTiO_3、LaAl_3和(Ba,Sr)TiO_3薄膜的生长及其异质结构。学生使用一种综合设施,允许通过MBE和ALD进行原位生长,并使用扫描探针以及电子、X射线和光子光谱进行原位表征。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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John Ekerdt其他文献
John Ekerdt的其他文献
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{{ truncateString('John Ekerdt', 18)}}的其他基金
Chemical Routes to the Growth of Crystalline Functional Oxides on Germanium
锗上晶体功能氧化物生长的化学路线
- 批准号:
1728656 - 财政年份:2017
- 资助金额:
$ 51.55万 - 项目类别:
Standard Grant
GOALI: Zintl Engineering of Epitaxial Ceramic Films on Gallium Nitride
目标:氮化镓上外延陶瓷薄膜的 Zintl 工程
- 批准号:
1507970 - 财政年份:2015
- 资助金额:
$ 51.55万 - 项目类别:
Continuing Grant
Chemical Routes to the Growth of Crystalline Oxides Directly on Germanium for Applications in Future Generation Microelectronic Devices
直接在锗上生长晶体氧化物的化学路线,用于下一代微电子器件
- 批准号:
1437050 - 财政年份:2014
- 资助金额:
$ 51.55万 - 项目类别:
Standard Grant
Nucleation and Growth of Thin Films and Nanostructures
薄膜和纳米结构的成核和生长
- 批准号:
1160195 - 财政年份:2012
- 资助金额:
$ 51.55万 - 项目类别:
Continuing Grant
GOALI: Negative Capacitance in Epitaxial Oxide Heterostructures
目标:外延氧化物异质结构中的负电容
- 批准号:
1207342 - 财政年份:2012
- 资助金额:
$ 51.55万 - 项目类别:
Continuing Grant
Growth of Ultra Thin Metal Alloy Films
超薄金属合金薄膜的生长
- 批准号:
0854345 - 财政年份:2009
- 资助金额:
$ 51.55万 - 项目类别:
Standard Grant
SGER - Fundamental Understanding of Catalytic Cleavage of Lignin in Ionic Liquids
SGER - 对离子液体中木质素催化裂解的基本了解
- 批准号:
0849342 - 财政年份:2008
- 资助金额:
$ 51.55万 - 项目类别:
Standard Grant
Materials World Network: Design, Growth, and Properties of Boron-based Thin Films for Electronics and Nanosized Electronics
材料世界网络:电子和纳米电子器件用硼基薄膜的设计、生长和性能
- 批准号:
0603004 - 财政年份:2006
- 资助金额:
$ 51.55万 - 项目类别:
Continuing Grant
Hydrocarbon Surface Reactions Over Transition Metals
过渡金属上的碳氢化合物表面反应
- 批准号:
8700876 - 财政年份:1987
- 资助金额:
$ 51.55万 - 项目类别:
Continuing Grant
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