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Materials World Network: Design, Growth, and Properties of Boron-based Thin Films for Electronics and Nanosized Electronics

Materials World Network: Design, Growth, and Properties of Boron-based Thin Films for Electronics and Nanosized Electronics
材料世界网络:电子和纳米电子器件用硼基薄膜的设计、生长和性能
批准号:
0603004
负责人:
John Ekerdt
金额:
$38.4万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2006
资助国家:
美国
项目状态:
已结题
起止时间:
2006-05-15 至 2009-10-31

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英文摘要
This Materials World Network project is a joint research and education activity between the University of Texas at Austin and the Materials Analysis Laboratory of the Centre de Recherche Public-Gabriel Lippmann in Luxembourg that explores how ultra thin amorphous films are formed in chemical and physical deposition approaches and how they function. The studies explore boron-carbon-nitrogen (B-C-N) ternary compounds because this nonoxidic ceramic material can be grown with variable composition and bonding, which in turn affect the thin film materials properties. The ultra thin films have considerable potential in micro-electronics device packaging applications as a diffusion barrier to copper and in nanoelectronics applications as a passivating film for nanowire-based devices. With this award, the research team at the University of Texas at Austin will study: 1) molecular bonding within the film and at the interface that controls the barrier and diffusion properties; 2) at what thickness the films become continuous and at what thickness the films cease to function as a barrier; 3) how the amorphous films nucleate and grow from oxide, semiconductor and metal surfaces; and 4) how the nature of the chemical bonding within the film and at the interface with semiconductors affects interface traps and carrier mobility. The research team in Luxembourg will study: 1) physical deposition conditions that would lead to amorphous versus crystalline films with tunable dielectric constants; 2) copper diffusion mechanisms in the films; 3) developing methods to characterize the material properties of 2-5 nm thick films; and 4) approaches to enhance bonding between the films and metals such as copper, cobalt, tungsten and tantalum. %%%Since boron carbonitride ternary compounds can potentially be grown or processed with variable composition and bonding, their material properties could be adjusted including crystallinity, microstructure, hardness, tribological, optical, field emission, thermal conductivity, and dielectric constant. These material properties make them ideal for microelectronic and nanoelectronic applications. This award will support the teaching and training of graduate students at Texas, and their travel to Luxembourg for research activities mentored by scientists there. These activities along with planned research activities of students and faculty from Luxembourg to University of Texas at Austin will expose the students and faculty to different scientific disciplines and cultures, and make them aware of different approaches to scientific activities and how to resolve scientific problems. Annual joint review meetings are planned to foster collaboration, dialog and exchange of ideas. The US students will mentor undergraduates in open-ended research projects lasting an academic term and will develop an exhibit that would explain the revolutionary and current devices that motivate this research, such as sensors and microelectronics, and introduces these concepts to the general public and to pre-college students. The exhibit will be presented and displayed through a variety of University of Texas sponsored venues.
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Chemical Routes to the Growth of Crystalline Functional Oxides on Germanium
  • 批准号:
    1728656
  • 项目类别:
    Standard Grant
  • 资助金额:
    $36.12万
  • 财政年份:
    2017
  • 负责人:
    John Ekerdt
  • 依托单位:
GOALI: Zintl Engineering of Epitaxial Ceramic Films on Gallium Nitride
  • 批准号:
    1507970
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $64.0万
  • 财政年份:
    2015
  • 负责人:
    John Ekerdt
  • 依托单位:
Chemical Routes to the Growth of Crystalline Oxides Directly on Germanium for Applications in Future Generation Microelectronic Devices
  • 批准号:
    1437050
  • 项目类别:
    Standard Grant
  • 资助金额:
    $31.48万
  • 财政年份:
    2014
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Nucleation and Growth of Thin Films and Nanostructures
  • 批准号:
    1160195
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $30.54万
  • 财政年份:
    2012
  • 负责人:
    John Ekerdt
  • 依托单位:
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国际心脏研究会第二十三届世界大会(XXIII World Congress ISHR)
  • 批准号:
    81942001
  • 项目类别:
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  • 资助金额:
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  • 批准年份:
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  • 负责人:
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  • 依托单位: