Growth of Ultra Thin Films
超薄膜的生长
基本信息
- 批准号:0553839
- 负责人:
- 金额:$ 22.06万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2006
- 资助国家:美国
- 起止时间:2006-06-01 至 2009-05-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
ABSTRACTPI: John G. Ekerdt Institution: University of Texas AustinProposal Number: 0553839Title: Growth of Ultra Thin FilmsIntellectual Merit This research program investigates the growth of ultra thin (less than 9 nm) metal films on amorphous substrates. Chemical growth methods will be studied and include chemical vapor deposition, atomic layer deposition and plasma-enhanced chemical vapor deposition. Metal films find applications in sensors, optics and microelectronics, and as the critical dimensions or size of the applications and systems decrease, the metal films thickness also must decrease to tens of atomic diameters at most and must have a specific microstructure. The research will focus on chemical and physical methods to increase the reactivity of the substrate toward the metal precursor to increase the density of clusters that grow into a continuous film. The research will also focus on the role of additives, with the potential to form thermodynamically stable compounds with the metals, to form dilute amorphous alloys that will interfere with the formation of polycrystalline films. Cobalt, nickel, ruthenium, rhenium and iridium metals will be studied along with carbon, nitrogen, silicon and phosphorus alloying additives. The research objectives are an understanding of the enabling reactions and processes that will lead to the thinnest possible continuous film, and to an ultra thin film with amorphous character. The program of work will involve film growth and characterization studies and it will involve surface studies to elucidate how the precursors interact with the substrates as the ligands and substrates are modified. The research leverages the expertise and experimental infrastructure at the University of Texas to grow and characterize films and to study surface reactions. Using the tools of surface science, the bonding and reactions at the substrate surface and at the film interface will be explored. Film composition and chemical bonding will be followed using X-ray photoelectron spectroscopy, secondary ion mass spectrometry and low energy ion scattering spectroscopy. A full complement of characterization facilities will be used to study the films, including spectral ellipsometry, atomic force microscopy, X-ray scattering spectroscopy, and high resolution electron microscopy.Broader ImpactsThis research is motivated in general by the key role thin and ultra thin metal films on amorphous substrates have in applications such as sensors and optics, as thermal barriers, and as diffusion barriers in microelectronics manufacturing, which could have a positive effect on the US economy.The research will directly support the training of two graduate students and indirectly provide opportunities for undergraduates to participate in open-ended research projects. The graduate students will develop mentoring skills through working with the undergraduate students. The PI and the graduate students will develop an exhibit that will help explain the revolutionary and current devices that motivate this research, sensors and microelectronics, and introduce these concepts to the general public and to pre-college students. They will present it and display it through a variety of University of Texas sponsored venues, such as the annual Austin Science Fun Day, UT Open House, and the Texas Memorial Museum.
摘要:约翰·G. Ekerdt机构:德克萨斯大学奥斯汀分校提案编号:0553839题目:超薄薄膜的生长智力优点本研究项目研究在非晶衬底上生长超薄(小于9纳米)金属薄膜。 将研究化学生长方法,包括化学气相沉积、原子层沉积和等离子体增强化学气相沉积。 金属薄膜在传感器、光学和微电子学中有着广泛的应用,随着应用和系统的关键尺寸或尺寸的减小,金属薄膜的厚度也必须减小到最多几十个原子直径,并且必须具有特定的微结构。 该研究将集中在化学和物理方法,以增加基板对金属前体的反应性,以增加生长成连续膜的簇的密度。 该研究还将重点关注添加剂的作用,其可能与金属形成化学稳定的化合物,形成稀释的非晶合金,这将干扰多晶薄膜的形成。 钴、镍、钌、钌和铱金属将与碳、氮、硅和磷合金添加剂一起沿着进行研究。 研究目标是了解使反应和过程,这将导致尽可能薄的连续薄膜,并与非晶特性的超薄薄膜。 工作计划将涉及薄膜生长和表征研究,并将涉及表面研究,以阐明前体如何与衬底相互作用,因为配体和衬底被修改。 该研究利用德克萨斯大学的专业知识和实验基础设施来生长和表征薄膜,并研究表面反应。 利用表面科学的工具,在基板表面和薄膜界面的键合和反应将被探索。 薄膜成分和化学键合将使用X射线光电子能谱,二次离子质谱和低能离子散射光谱。 一个完整的补充表征设施将被用来研究薄膜,包括光谱椭圆偏振仪,原子力显微镜,X射线散射光谱,和高分辨率电子显微镜。更广泛的影响这项研究的动机一般的关键作用薄和超薄金属薄膜在非晶衬底上的应用,如传感器和光学,作为热屏障,并作为扩散屏障在微电子制造,这可能会对美国经济产生积极影响。该研究将直接支持两名研究生的培训,并间接为本科生提供参与开放式研究项目的机会。 研究生将通过与本科生合作来培养指导技能。 PI和研究生将开发一个展览,这将有助于解释推动这项研究,传感器和微电子技术的革命性和当前的设备,并向公众和大学预科生介绍这些概念。 他们将通过德克萨斯大学赞助的各种场所展示它,如一年一度的奥斯汀科学趣味日,UT开放日和德克萨斯纪念博物馆。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
数据更新时间:{{ journalArticles.updateTime }}
{{
item.title }}
{{ item.translation_title }}
- DOI:
{{ item.doi }} - 发表时间:
{{ item.publish_year }} - 期刊:
- 影响因子:{{ item.factor }}
- 作者:
{{ item.authors }} - 通讯作者:
{{ item.author }}
数据更新时间:{{ journalArticles.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ monograph.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ sciAawards.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ conferencePapers.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ patent.updateTime }}
John Ekerdt其他文献
John Ekerdt的其他文献
{{
item.title }}
{{ item.translation_title }}
- DOI:
{{ item.doi }} - 发表时间:
{{ item.publish_year }} - 期刊:
- 影响因子:{{ item.factor }}
- 作者:
{{ item.authors }} - 通讯作者:
{{ item.author }}
{{ truncateString('John Ekerdt', 18)}}的其他基金
Chemical Routes to the Growth of Crystalline Functional Oxides on Germanium
锗上晶体功能氧化物生长的化学路线
- 批准号:
1728656 - 财政年份:2017
- 资助金额:
$ 22.06万 - 项目类别:
Standard Grant
GOALI: Zintl Engineering of Epitaxial Ceramic Films on Gallium Nitride
目标:氮化镓上外延陶瓷薄膜的 Zintl 工程
- 批准号:
1507970 - 财政年份:2015
- 资助金额:
$ 22.06万 - 项目类别:
Continuing Grant
Chemical Routes to the Growth of Crystalline Oxides Directly on Germanium for Applications in Future Generation Microelectronic Devices
直接在锗上生长晶体氧化物的化学路线,用于下一代微电子器件
- 批准号:
1437050 - 财政年份:2014
- 资助金额:
$ 22.06万 - 项目类别:
Standard Grant
Nucleation and Growth of Thin Films and Nanostructures
薄膜和纳米结构的成核和生长
- 批准号:
1160195 - 财政年份:2012
- 资助金额:
$ 22.06万 - 项目类别:
Continuing Grant
GOALI: Negative Capacitance in Epitaxial Oxide Heterostructures
目标:外延氧化物异质结构中的负电容
- 批准号:
1207342 - 财政年份:2012
- 资助金额:
$ 22.06万 - 项目类别:
Continuing Grant
GOALI/FRG: Epitaxial Growth of Perovskite Films and Heterostructures by Atomic Layer Deposition and Molecular Beam Epitaxy
GOALI/FRG:通过原子层沉积和分子束外延来外延生长钙钛矿薄膜和异质结构
- 批准号:
1006725 - 财政年份:2010
- 资助金额:
$ 22.06万 - 项目类别:
Continuing Grant
Growth of Ultra Thin Metal Alloy Films
超薄金属合金薄膜的生长
- 批准号:
0854345 - 财政年份:2009
- 资助金额:
$ 22.06万 - 项目类别:
Standard Grant
SGER - Fundamental Understanding of Catalytic Cleavage of Lignin in Ionic Liquids
SGER - 对离子液体中木质素催化裂解的基本了解
- 批准号:
0849342 - 财政年份:2008
- 资助金额:
$ 22.06万 - 项目类别:
Standard Grant
Materials World Network: Design, Growth, and Properties of Boron-based Thin Films for Electronics and Nanosized Electronics
材料世界网络:电子和纳米电子器件用硼基薄膜的设计、生长和性能
- 批准号:
0603004 - 财政年份:2006
- 资助金额:
$ 22.06万 - 项目类别:
Continuing Grant
Hydrocarbon Surface Reactions Over Transition Metals
过渡金属上的碳氢化合物表面反应
- 批准号:
8700876 - 财政年份:1987
- 资助金额:
$ 22.06万 - 项目类别:
Continuing Grant
相似国自然基金
磷脂酶Ultra特异性催化油脂体系中微量磷脂分子的调控机制研究
- 批准号:31471690
- 批准年份:2014
- 资助金额:90.0 万元
- 项目类别:面上项目
适应纳米尺度CMOS集成电路DFM的ULTRA模型完善和偏差模拟技术研究
- 批准号:60976066
- 批准年份:2009
- 资助金额:41.0 万元
- 项目类别:面上项目
相似海外基金
Selective growth of ultra-long grain in metal thin film for microelectronic application
微电子应用金属薄膜中超长晶粒的选择性生长
- 批准号:
18K14139 - 财政年份:2018
- 资助金额:
$ 22.06万 - 项目类别:
Grant-in-Aid for Early-Career Scientists
Growth and Structure of Multifunctional Polymer Brushes from Ultra-thin Coatings
超薄涂层多功能聚合物刷的生长和结构
- 批准号:
1507409 - 财政年份:2015
- 资助金额:
$ 22.06万 - 项目类别:
Continuing Grant
Growth of Ultra Thin Metal Alloy Films
超薄金属合金薄膜的生长
- 批准号:
0854345 - 财政年份:2009
- 资助金额:
$ 22.06万 - 项目类别:
Standard Grant
Growth, structure and magnetic properties of ultra thin transition metal oxides on metals (A05)
金属上超薄过渡金属氧化物的生长、结构和磁性(A05)
- 批准号:
61785647 - 财政年份:2008
- 资助金额:
$ 22.06万 - 项目类别:
Collaborative Research Centres
RUI: Issues in Ultra Thin Film Growth on Group IV Semiconductors(Renewal)
RUI:IV 族半导体上的超薄膜生长问题(续订)
- 批准号:
0511811 - 财政年份:2005
- 资助金额:
$ 22.06万 - 项目类别:
Continuing Grant
Atomic-scale investigation of organic ultra-thin film and other materials on si-based substrates: film growth and electronic properties
硅基衬底上有机超薄膜和其他材料的原子尺度研究:薄膜生长和电子性能
- 批准号:
229130-2000 - 财政年份:2004
- 资助金额:
$ 22.06万 - 项目类别:
University Faculty Award
US-France Cooperative Research: Molecule/Surface Interaction and the Formation of Ultra-Thin Layers During High-k Dielectric Growth on Silicon
美法合作研究:硅上高 k 电介质生长过程中的分子/表面相互作用和超薄层的形成
- 批准号:
0341053 - 财政年份:2004
- 资助金额:
$ 22.06万 - 项目类别:
Standard Grant
Atomic-scale investigation of organic ultra-thin film and other materials on si-based substrates: film growth and electronic properties
硅基衬底上有机超薄膜和其他材料的原子尺度研究:薄膜生长和电子性能
- 批准号:
229130-2000 - 财政年份:2003
- 资助金额:
$ 22.06万 - 项目类别:
University Faculty Award
Atomic-scale investigation of organic ultra-thin film and other materials on si-based substrates: film growth and electronic properties
硅基衬底上有机超薄膜和其他材料的原子尺度研究:薄膜生长和电子性能
- 批准号:
229130-2000 - 财政年份:2002
- 资助金额:
$ 22.06万 - 项目类别:
University Faculty Award
Atomic-scale investigation of organic ultra-thin film and other materials on Si-based substrates: film growth and electronic properties
硅基衬底上有机超薄膜和其他材料的原子尺度研究:薄膜生长和电子性能
- 批准号:
229523-2000 - 财政年份:2002
- 资助金额:
$ 22.06万 - 项目类别:
Discovery Grants Program - Individual