Materials World Network: Novel Magnetic Materials for Spin-Torque Physics and Devices.

纳米磁学是科学中最活跃的领域之一，涉及广泛的基础科学问题以及重要和新兴的技术。加州大学圣地亚哥分校、让·拉穆尔研究所和法国巴黎南奥赛大学的研究人员之间的这项联合工作的主要重点是研究用于自旋电子学的新型纳米结构磁性材料，更确切地说，是用于基于自旋转移力矩的存储器和自旋逻辑器件。该研究有三个主要领域：（一）开发和表征适用于磁电子学的新型磁性材料，（二）将这些材料集成到纳米柱，自旋注入和线器件中，以及（三）研究内在（各向异性，阻尼，磁化）和外在（器件的大小和形状）参数对纳米级注入电流引起的磁化动态的影响。这项研究具有实现基本理解和能力的前景，以修改为自旋扭矩应用设计的新材料的性能。 这项研究解决了纳米尺度下磁性，动力学和自旋输运的基本问题，并在材料合成和表征，器件制造，纳米科学和纳米技术的重要领域培养本科生和研究生。对新型磁性材料的理解和控制将产生广泛的影响，从理解当前磁性器件的性能，到评估未来基于自旋的电子学中磁性电流控制的潜力。该奖项由国际科学与工程办公室共同支持。

Nanomagnetism is one of the most active areas in science, with a wide range of fundamental scientific problems as well as important and emerging technologies. The main focus of this joint work between investigators at the University of California-San Diego, the Institut Jean Lamour and the Universite du Paris Sud-Orsay in France is on novel nanostructured magnetic materials for spintronics and, more precisely, for spin transfer torque based memory and spin logic devices. The research has three thrust areas: (i) development and characterization of novel magnetic materials suitable for magneto-electronics, (ii) integration of these materials into nanopillars, spin-injection and wire devices and (iii) study of the influence of both intrinsic (anisotropy, damping, magnetization) and extrinsic (size and shape of devices) parameters on the magnetization dynamic due to injected current at the nanoscale. This research has prospects of achieving a fundamental understanding and ability to modify the properties of novel materials designed for spin-torque applications. This research addresses fundamental issues of magnetism, dynamics and spin transport at the nanoscale and trains undergraduate and graduate students in important areas of materials synthesis and characterization, device fabrication, nano-science, and nano-technology. An understanding and control of novel magnetic materials will have broad ranging impact from understanding the performance of current magnetic devices, to assessing the potential of current control of magnetism in future spin-based electronics. This award is co-supported by the Office of International Science and Engineering.