MRI Acquisition: Compound Semiconductor Reactive Ion Etcher for Functionally Diverse Materials, Structures and Devices
MRI 采集:用于功能多样的材料、结构和器件的化合物半导体反应离子蚀刻机
基本信息
- 批准号:1039988
- 负责人:
- 金额:$ 41.5万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2010
- 资助国家:美国
- 起止时间:2010-11-01 至 2012-10-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
The objective of this research is to enhance fabrication of devices based on compound semiconductors in areas related to energy, nanoelectronics and nanophotonics. The approach is to acquire one inductively coupled plasma (ICP) reactive ion etcher (RIE) for etching compound semiconductors and materials on compound semiconductors to augment the tool set available within the shared-access University of Texas at Dallas (UTD) shared-access Cleanroom Research Laboratory (CRL). Intellectual Merit: The project will close the gap in compound semiconductor applications, unify research and development in materials and devices, and allow teaming among university and industry researchers for a wide variety of application segments including communications, military, medical and energy.Broader Impact: The UTD CRL enables the research of over 160 users throughout UTD as well as academic researchers from other universities. Hands-on experience with state-of-the-art equipment prepares students and post-docs to enter the workforce ready to engage in research, development, and manufacturing. The breadth of functionally diverse materials, structures and devices enabled by this RIE will attract a broader pool of researchers beyond the current user base. The PIs will develop a two lecture sequence for an undergraduate Nanotech Instrumentation course which will focus on facilitization of advanced research equipment using this new RIE as the example. This represents a unique opportunity to directly show undergraduates how numerous disciplines are required to manufacture, install and operate advanced research equipment.
本研究的目的是提高在与能源,纳米电子学和纳米光子学相关的领域中基于化合物半导体的器件的制造。 该方法是获得一个电感耦合等离子体(ICP)反应离子蚀刻机(RIE)的化合物半导体和材料的化合物半导体,以增加共享访问的德克萨斯大学达拉斯(UTD)共享访问的洁净室研究实验室(CRL)内可用的工具集。 智力优势:该项目将缩小化合物半导体应用领域的差距,统一材料和器件的研究和开发,并允许大学和行业研究人员在通信、军事、医疗和能源等广泛的应用领域进行合作。更广泛的影响:UTD CRL使整个UTD的160多个用户以及其他大学的学术研究人员能够进行研究。 实践经验与国家的最先进的设备准备学生和博士后进入劳动力准备从事研究,开发和制造。 该RIE所实现的功能多样的材料、结构和器件的广度将吸引更多的研究人员,而不仅仅是目前的用户群。 PI将为本科生纳米技术仪器课程开发两个讲座序列,该课程将侧重于使用这种新的RIE为例的先进研究设备的便利化。 这是一个独特的机会,直接向本科生展示如何众多学科需要制造,安装和操作先进的研究设备。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Christopher Hinkle其他文献
Materials for interconnects
互连材料
- DOI:
10.1557/s43577-021-00192-3 - 发表时间:
2021-10-28 - 期刊:
- 影响因子:4.900
- 作者:
Daniel Gall;Judy J. Cha;Zhihong Chen;Hyeuk-Jin Han;Christopher Hinkle;Joshua A. Robinson;Ravishankar Sundararaman;Riccardo Torsi - 通讯作者:
Riccardo Torsi
Christopher Hinkle的其他文献
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{{ truncateString('Christopher Hinkle', 18)}}的其他基金
Collaborative Research: FuSe: Interconnects with Co-Designed Materials, Topology, and Wire Architecture
合作研究:FuSe:与共同设计的材料、拓扑和线路架构互连
- 批准号:
2328908 - 财政年份:2023
- 资助金额:
$ 41.5万 - 项目类别:
Continuing Grant
Collaborative Research: DMREF: Accelerated Design, Discovery, and Deployment of Electronic Phase Transitions (ADEPT)
合作研究:DMREF:电子相变的加速设计、发现和部署 (ADEPT)
- 批准号:
2324172 - 财政年份:2023
- 资助金额:
$ 41.5万 - 项目类别:
Standard Grant
QuIC-TAQS: Deterministically Placed Nuclear Spin Quantum Memories for Entanglement Distribution
QuIC-TAQS:用于纠缠分布的确定性放置的核自旋量子存储器
- 批准号:
2137828 - 财政年份:2021
- 资助金额:
$ 41.5万 - 项目类别:
Continuing Grant
DMREF: Collaborative Research: Machine learning exploration of atomic heterostructures towards perfect light absorber and giant piezoelectricity
DMREF:协作研究:原子异质结构的机器学习探索完美的光吸收体和巨压电性
- 批准号:
1921818 - 财政年份:2019
- 资助金额:
$ 41.5万 - 项目类别:
Standard Grant
Collaborative Research: Defect Immune, Topologically Protected Devices for Ultra-Low Power Electronics
合作研究:用于超低功率电子器件的缺陷免疫、拓扑保护器件
- 批准号:
1802166 - 财政年份:2018
- 资助金额:
$ 41.5万 - 项目类别:
Standard Grant
Collaborative Research: Defect Immune, Topologically Protected Devices for Ultra-Low Power Electronics
合作研究:用于超低功率电子器件的缺陷免疫、拓扑保护器件
- 批准号:
1917025 - 财政年份:2018
- 资助金额:
$ 41.5万 - 项目类别:
Standard Grant
MRI Acquisition: High-Resolution and Ultra-High Speed X-Ray Diffractometer for Structure, Crystal Quality, and Preferred Orientation Determination
MRI 采集:用于结构、晶体质量和择优取向测定的高分辨率和超高速 X 射线衍射仪
- 批准号:
1531811 - 财政年份:2015
- 资助金额:
$ 41.5万 - 项目类别:
Standard Grant
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