Collaborative Research: DMREF: Accelerated Design, Discovery, and Deployment of Electronic Phase Transitions (ADEPT)

合作研究:DMREF:电子相变的加速设计、发现和部署 (ADEPT)

基本信息

  • 批准号:
    2324172
  • 负责人:
  • 金额:
    $ 40万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    2023
  • 资助国家:
    美国
  • 起止时间:
    2023-10-01 至 2027-09-30
  • 项目状态:
    未结题

项目摘要

Non-Technical Description:The world has seen an enormous increase in global connectivity, information processing, and information storage driven by advances in technologies that rely largely on traditional semiconductors. Their underlying material platforms, however, are facing enormous challenges. A future generation of electronic devices can be established using materials which exist in multiple electronic states. Materials and devices that can be switched from an insulator to a metal by an external trigger would revitalize the U.S. semiconductor ecosystem, providing new paths to low-power computing systems and integration into systems for 6G and beyond applications. The project goal is to design and discover materials exhibiting such insulator-to-metal transitions (IMT) that enable room-temperature operation and display large changes in electrical resistivity. The research team, which comprises interdisciplinary expertise in computational and experimental materials physics, data science, and device engineering, aims to enable a culture shift in materials research, development, and deployment through training a well-equipped and diverse workforce with proficiencies in data-driven discovery of advanced materials. Leveraging Materials Genome Initiative principles, the team will deliver a tightly integrated codesign methodology to facilitate modeling and synthesis of new IMT materials with superior properties, and ultimately guide the design towards record-setting device performance to strengthen American leadership in future computing, storage and communication technologies and industries. Technical Description:The goal of the Accelerated Design, Discovery, and Deployment of Electronic Phase Transitions (ADEPT) project is to implement an accelerated discovery and codesign engine for efficient deployment of insulator-metal transition (IMT) materials traditionally marred by sparse prior data and system-level constraints. Achieving this goal requires moving beyond conventional, linear approaches to materials discovery, transforming them into a cyclic and iterative process. The project formulates new computational approaches that fuse computational data with high-throughput materials synthesis and characterization data to overcome key challenges of (i) Materials Discovery from Sparse & Expensive Data, (ii) Efficient Decoding of High-Dimensional Experimental Data, and (iii) Property-Performance Mismatch upon Integration. Their confluence hinders the advancement of novel material platforms for future microelectronic and wireless communication technologies. The project goal will be executed by creating integrated protocols that transform the standard sequential discovery steps (hypothesis generation, synthesis, characterization) into closed-loops fashioned to overcome these challenges: (1) AI-Aided Virtual Screening and Adaptive Discovery, (2) Accelerated Synthesis and Characterization Analytics, and (3) Materials Integration, Device Fabrication, and Codesign. Success with this framework will allow for the realization of material objectives within device constraints and deliver the following outcomes: (1) new classes of single and two-phase IMT materials (2) distributed in open-access databases, (3) theories of IMT behavior, (4) novel IMT thin film synthesis methods, (5) contactless characterization methods to improve throughput, (6) adaptive learning methods to achieve codesigned materials and devices, and (7) quantitative understanding of device performance to benefit future scalability and manufacturing with industrial partners.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
非技术描述:在主要依赖传统半导体的技术进步的推动下,世界上的全球连接、信息处理和信息存储都有了巨大的增长。然而,它们的基础材料平台正面临着巨大的挑战。使用存在于多种电子状态的材料可以建立未来一代的电子器件。可以通过外部触发器从绝缘体转换为金属的材料和器件将重振美国半导体生态系统,为低功耗计算系统和集成到6G及以上应用系统提供新的途径。该项目的目标是设计和发现具有这种绝缘体到金属转变(IMT)的材料,使其能够在室温下操作并显示电阻率的大变化。该研究团队包括计算和实验材料物理学、数据科学和设备工程方面的跨学科专业知识,旨在通过培训一支装备精良、多样化的员工队伍,熟练掌握数据驱动的先进材料发现,从而实现材料研究、开发和部署方面的文化转变。利用材料基因组计划原则,该团队将提供紧密集成的协同设计方法,以促进具有优越性能的新型IMT材料的建模和合成,并最终指导设计创纪录的设备性能,以加强美国在未来计算,存储和通信技术和行业中的领导地位。技术描述:加速设计、发现和部署电子相变(ADEPT)项目的目标是实现一个加速发现和协同设计引擎,用于有效部署传统上被稀疏的先验数据和系统级约束所破坏的绝缘体-金属过渡(IMT)材料。实现这一目标需要超越传统的、线性的材料发现方法,将其转变为一个循环和迭代的过程。该项目制定了新的计算方法,将计算数据与高通量材料合成和表征数据融合在一起,以克服以下关键挑战:(i)从稀疏和昂贵的数据中发现材料,(ii)高维实验数据的高效解码,以及(iii)集成时的属性-性能不匹配。它们的融合阻碍了未来微电子和无线通信技术的新材料平台的发展。该项目的目标将通过创建集成协议来实现,该协议将标准的顺序发现步骤(假设生成、合成、表征)转变为闭环,以克服以下挑战:(1)人工智能辅助虚拟筛选和自适应发现,(2)加速合成和表征分析,以及(3)材料集成、设备制造和协同设计。该框架的成功将允许在设备限制下实现材料目标,并提供以下结果:(1)新类别的单相和两相IMT材料(2)分布在开放访问数据库中,(3)IMT行为理论,(4)新颖的IMT薄膜合成方法,(5)提高吞吐量的非接触表征方法,(6)实现材料和器件协同设计的自适应学习方法,以及(7)对器件性能的定量理解,有利于未来的可扩展性和与工业合作伙伴的制造。该奖项反映了美国国家科学基金会的法定使命,并通过使用基金会的知识价值和更广泛的影响审查标准进行评估,被认为值得支持。

项目成果

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Christopher Hinkle其他文献

Materials for interconnects
互连材料
  • DOI:
    10.1557/s43577-021-00192-3
  • 发表时间:
    2021-10-28
  • 期刊:
  • 影响因子:
    4.900
  • 作者:
    Daniel Gall;Judy J. Cha;Zhihong Chen;Hyeuk-Jin Han;Christopher Hinkle;Joshua A. Robinson;Ravishankar Sundararaman;Riccardo Torsi
  • 通讯作者:
    Riccardo Torsi

Christopher Hinkle的其他文献

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{{ truncateString('Christopher Hinkle', 18)}}的其他基金

Collaborative Research: FuSe: Interconnects with Co-Designed Materials, Topology, and Wire Architecture
合作研究:FuSe:与共同设计的材料、拓扑和线路架构互连
  • 批准号:
    2328908
  • 财政年份:
    2023
  • 资助金额:
    $ 40万
  • 项目类别:
    Continuing Grant
QuIC-TAQS: Deterministically Placed Nuclear Spin Quantum Memories for Entanglement Distribution
QuIC-TAQS:用于纠缠分布的确定性放置的核自旋量子存储器
  • 批准号:
    2137828
  • 财政年份:
    2021
  • 资助金额:
    $ 40万
  • 项目类别:
    Continuing Grant
DMREF: Collaborative Research: Machine learning exploration of atomic heterostructures towards perfect light absorber and giant piezoelectricity
DMREF:协作研究:原子异质结构的机器学习探索完美的光吸收体和巨压电性
  • 批准号:
    1921818
  • 财政年份:
    2019
  • 资助金额:
    $ 40万
  • 项目类别:
    Standard Grant
Collaborative Research: Defect Immune, Topologically Protected Devices for Ultra-Low Power Electronics
合作研究:用于超低功率电子器件的缺陷免疫、拓扑保护器件
  • 批准号:
    1802166
  • 财政年份:
    2018
  • 资助金额:
    $ 40万
  • 项目类别:
    Standard Grant
Collaborative Research: Defect Immune, Topologically Protected Devices for Ultra-Low Power Electronics
合作研究:用于超低功率电子器件的缺陷免疫、拓扑保护器件
  • 批准号:
    1917025
  • 财政年份:
    2018
  • 资助金额:
    $ 40万
  • 项目类别:
    Standard Grant
MRI Acquisition: High-Resolution and Ultra-High Speed X-Ray Diffractometer for Structure, Crystal Quality, and Preferred Orientation Determination
MRI 采集:用于结构、晶体质量和择优取向测定的高分辨率和超高速 X 射线衍射仪
  • 批准号:
    1531811
  • 财政年份:
    2015
  • 资助金额:
    $ 40万
  • 项目类别:
    Standard Grant
MRI Acquisition: Compound Semiconductor Reactive Ion Etcher for Functionally Diverse Materials, Structures and Devices
MRI 采集:用于功能多样的材料、结构和器件的化合物半导体反应离子蚀刻机
  • 批准号:
    1039988
  • 财政年份:
    2010
  • 资助金额:
    $ 40万
  • 项目类别:
    Standard Grant

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Collaborative Research: DMREF: AI-enabled Automated design of ultrastrong and ultraelastic metallic alloys
合作研究:DMREF:基于人工智能的超强和超弹性金属合金的自动化设计
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