课题基金 / 基金详情

Materials World Network: Nano-Structured InGaN Solar Cells Program

Materials World Network: Nano-Structured InGaN Solar Cells Program
材料世界网:纳米结构InGaN太阳能电池项目
批准号:
1108450
负责人:
Fernando Ponce
金额:
$42.0万
依托单位:
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2011
资助国家:
美国
项目状态:
已结题
起止时间:
2011-09-01 至 2014-08-31

项目摘要

项目成果

Fernando Ponce的其他基金

相似基金

相关文献

中文摘要
翻译
点击翻译按钮获取中文摘要
英文摘要
There is a worldwide effort to increase power generation through solar cells, to meet targets in reducing greenhouse gases. One requirement is for high efficiency multijunction solar cells (MJSCs) to extract power from concentrated solar power (CSP) plants, which are expected to become central to the delivery of solar power to national and super-grid systems. At present, such MJSCs must combine different materials systems and are usually limited by the requirement to lattice-match the individual cells to avoid efficiency losses due to defects. This effort aims to circumvent these problems by investigating solar cells based on InxGa1-xN, which has a direct band gap of 0.7-3.4 eV, spanning most of the visible spectrum, thus promising MJSCs from a single materials system. To avoid the problems of lattice mismatch and of material quality, which limit prototype solar cells based on InxGa1-xN epilayers to low x (x0.3), the investigators grow the InxGa1-xN in nanorod form, merging the nanorods using methods already developed to provide a solar cell template. The team assembled, which combines complementary expertise in growth and device fabrication (U. Nottingham), structural characterization (U. Bristol), and nanoscale optical and electrical characterization (Arizona State U.) and solar cell design and characterization (in collaboration with NREL), aims to explore the properties of InxGa1-xN single junction cells over the full composition range (0x1), with the UK participants receiving support from the Engineering and Physical Sciences Council of the UK. The team examines key fundamental properties of InxGa1-xN nanorods, using transmission and scanning electron microscopy to determine the materials requirements for growing defect-free InxGa1-xN nanorod arrays, and overcoming the problem of lattice mismatch. The work also examines the electronic properties of InxGa1-xN nanorods using novel cathodoluminescence and electron holography studies, and time-resolved photoluminescence. Single junction solar cells will be fabricated and characterized for InxGa1-xN nanorods with low and high In content, and exploratory work will be carried out into a novel two-junction nanorod cell including a tunnel junction, thus establishing the requirements for the future development of InxGa1-xN MJSC devices. The work aims to establish InGaN as a basis for (a) photovoltaics across the entire visible spectrum and (b) high efficiency MJSCs needed for CSP plants, by using a novel nanorod geometry to overcome the materials limitations that affect continuous InGaN epilayers. The team assembled brings together leading groups with a unique combination of expertise and techniques designed to clarify the key materials issues, including the fundamental properties of the nanorods and of prototype solar cells. As public science literacy is critical to the development of sound policy, project education/outreach efforts include contributions to the Arizona State University's "Science is Fun" program to develop a 45-60 minute lesson suitable for students in grades 4th through 12th. The objective is to (i) increase student interest in science and engineering and encourage the pursuit of advanced education in related technical fields, and (ii) elucidate how intellectual innovations can impact future efficient use of renewable energy, and help develop human infrastructure for the high-technology industry in Arizona. A new course on materials for nano-structured photovoltaic devices is also developed at Arizona State University to be included in the curriculum of the newly established Science Master's in Nanoscience program.
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
Collaborative Research: Fundamental Studies of the Properties of B-III-N Wide-Bandgap Semiconductor Alloys
  • 批准号:
    1411022
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $21.0万
  • 财政年份:
    2014
  • 负责人:
    Fernando Ponce
  • 依托单位:
Support for the 27th International Conference on Physics of Semiconductors; Flagstaff, Arizona; July 26-30-2004
  • 批准号:
    0401671
  • 项目类别:
    Standard Grant
  • 资助金额:
    $6.0万
  • 财政年份:
    2004
  • 负责人:
    Fernando Ponce
  • 依托单位:
Pan American Advanced Studies Institute: Physics at the Nanometer Scale; San Carlos Bariloche, Argentina, June, 2003.
  • 批准号:
    0221194
  • 项目类别:
    Standard Grant
  • 资助金额:
    $10.0万
  • 财政年份:
    2002
  • 负责人:
    Fernando Ponce
  • 依托单位:
国内基金
海外基金
国际心脏研究会第二十三届世界大会(XXIII World Congress ISHR)
  • 批准号:
    81942001
  • 项目类别:
    专项基金项目
  • 资助金额:
    10万元
  • 批准年份:
    2019
  • 负责人:
    朱毅
  • 依托单位: