SBIR Phase I: Low-Cost High Performance Cold Plate for Power Electronics Thermal Management
SBIR Phase I: Low-Cost High Performance Cold Plate for Power Electronics Thermal Management
批准号:
1142839
负责人:
James Connell
金额:
$15.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2012
资助国家:
美国
项目状态:
已结题
起止时间:
2012-01-01 至 2012-12-31
中文摘要
这个小型企业创新研究(SBIR)第一阶段项目的重点是开发一种用于电源模块热管理的新型低成本冷板。这种冷板是由一个独特的集成封装和散热器组装技术。集成封装和散热器组件的目标应用是高温碳化硅(SiC)功率模块。与传统的硅功率模块相比,SiC功率模块提供了显著的改进,包括功率密度增加10倍,击穿电压提高10倍,开关损耗降低90%。目前,支持SiC功率模块在250℃及更高温度下工作的封装技术尚不存在。提出的集成封装和散热器组件由陶瓷-石墨-铜衬底连接到独特,低成本,高效紧凑的热交换表面组成。这个集成组件提供了电源模块的电气隔离。s的电子元件和电路,并最大限度地减少SiC器件和散热器冷却剂之间的热阻。此外,该组件还可最大限度地减少组件不同材料层之间的热膨胀系数(CTE)不匹配,从而最大限度地减少由循环功率和温度操作引起的热应力。关键是实现可靠的产品与长寿命。该项目的主要研究目标是开发一种低成本的独特集成封装和散热器组件,并建立支持其制造所需的制造工艺。对于能够满足新兴SiC功率模块应用的热管理要求的先进封装和主动冷却解决方案的需求非常迫切,这些应用包括:(1)混合动力电动汽车(HEV)功率逆变器和转换器;(2)可再生能源系统的电源转换器(如太阳能电池阵列、风力发电机);(3)各种电子系统的电源(直流电源和逆变器)。该项目的更广泛的影响/商业潜力是开发能够降低成本的SiC功率模块的技术。半导体技术的进步导致了更小的器件在更高的功率下工作,预计高功率半导体器件的趋势将继续下去。这一趋势推动了对与半导体器件CTE密切匹配的封装材料的需求,同时降低了封装的整体热阻。拟议的项目将开发一种基于独特封装和散热器技术集成的冷板,用于功率模块。与目前的封装技术相比,这种集成封装和散热器将最大限度地减少器件/封装CTE不匹配,同时将模块整体热阻降低60%至70%。该技术将使电源模块具有更高的封装密度,提高可靠性和寿命。这些改进将直接导致功率模块成本降低30%至40%,并将成为推动SiC功率模块技术需求的关键。该项目研究将产生所需的关键知识,以实现设计和低成本制造可靠,高效的集成封装和散热器产品,用于一系列电力电子系统。该技术的目标应用是用于HEV应用的SiC功率模块。这项技术的发展将使包括消费者和企业在内的一系列终端用户受益。此外,考虑到广泛的功率模块应用,该技术将受益于商业、工业和军事大功率电子系统终端用户。基于该技术的年度商业产品销售额预计将在10年内增长至1.5亿美元。最后,封装和散热器技术的采用和广泛使用将使电子系统基于更高效的高功率半导体材料(例如,SiC,氮化镓等)。这将以更高效、更长寿的电子产品的形式为社会带来好处;减少能源消耗;改善环境质量。
英文摘要
This Small Business Innovation Research (SBIR) Phase I project is focused on the development of a novel, low-cost cold plate for power module thermal management. This cold plate is enabled by a unique integrated package and heat sink assembly technology. The target application for the integrated package and heat sink assembly is high-temperature silicon carbide (SiC) power modules. SiC power modules offer significant improvements over conventional silicon power modules to include up to a 10 fold increase in power density, a 10 fold higher breakdown voltage and 90% lower switching losses. Currently, packaging technology to support SiC power module operation at temperatures of 250 oC and higher does not exist. The proposed integrated package and heat sink assembly is comprised of a ceramic-graphite-copper substrate joined to a unique, low-cost highly effective compact heat exchange surface. This integrated assembly provides for electrical isolation of the power module?s electronic components and circuitry, and minimizes the thermal resistance between the SiC devices and the heat sink coolant. Further, the assembly provides for the minimization of the coefficient of thermal expansion (CTE) mismatch between the different material layers of the assembly in order to minimize thermal stresses resulting from cyclic power and temperature operation ? key to achieving a reliable product with a long life. The primary research objectives of this project are the development of a low-cost unique integrated package and heat sink assembly and the establishment of the fabrication processes required to support its manufacture. There is a critical need for advanced packaging and active cooling solutions capable of meeting the thermal management requirements of emerging SiC power module applications which include: (1) hybrid electric vehicle (HEV) power inverters and converters; (2) power converters for renewable energy systems (e.g., solar arrays, wind generators); and (3) power supplies for a wide variety of electronic systems (DC power supplies and inverters).The broader impact/commercial potential of this project is the development of technology that will enable lower cost SiC power modules. Advances in semiconductor technology have led to smaller devices operating at higher power and the trend toward higher power semiconductor devices is forecast to continue. This trend is driving the demand for packaging materials that are closely matched to the CTE of semiconductor devices while lowering package overall thermal resistance. The proposed project will develop a cold plate based upon the integration of unique package and heat sink technologies for use in power modules. This integrated package and heat sink will minimize device/package CTE mismatch while reducing module overall thermal resistance by 60% to 70% compared to current packaging technology. This technology will enable power modules with higher packaging density and improved reliability and life. These improvements will lead directly to a power module cost reduction of 30% to 40% and will be key to driving the demand for SiC power module technology. The project research will produce the key knowledge required to enable the design and low-cost manufacture of reliable, highly effective integrated package and heat sink products for use in a range of power electronic systems. The target application for the technology is a SiC power module for use in an HEV application. This technology development will benefit a range of end user to include consumers and businesses. Further, considering the broad range of power module applications, the technology will benefit a spectrum of commercial, industrial, and military high power electronic systems end users. The annual commercial product sales based upon the technology is estimated to grow to ~$150 million over a 10 year time horizon. Finally, the adoption and wide-spread use of the package and heat sink technology will enable electronic systems based upon more efficient higher power semiconductor materials (e.g., SiC, gallium nitride, etc.). This will provide benefit to society in the form of more efficient, longer life electronics; reduced energy consumption; and improved environmental quality.
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