SBIR Phase I: Low-Cost High Performance Cold Plate for Power Electronics Thermal Management
SBIR Phase I: Low-Cost High Performance Cold Plate for Power Electronics Thermal Management
批准号:
1142839
负责人:
James Connell
金额:
$15.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2012
资助国家:
美国
项目状态:
已结题
起止时间:
2012-01-01 至 2012-12-31
中文摘要
该小型企业创新研究(SBIR)第一阶段项目的重点是开发一种用于功率模块热管理的新型低成本冷板。 该冷板采用独特的集成封装和散热器组装技术。 集成封装和散热器组件的目标应用是高温碳化硅(SiC)功率模块。 SiC功率模块与传统硅功率模块相比具有显著的改进,包括功率密度提高10倍,击穿电压提高10倍,开关损耗降低90%。 目前,还不存在支持SiC功率模块在250 oC及更高温度下工作的封装技术。 所提出的集成封装和散热器组件由陶瓷-石墨-铜基板连接到独特的、低成本的、高效的紧凑型热交换表面。 该集成组件提供了电源模块的电气隔离?SiC器件和散热器冷却剂之间的热阻最小化。 此外,该组件提供了组件的不同材料层之间的热膨胀系数(CTE)失配的最小化,以便最小化由循环功率和温度操作引起的热应力。是实现可靠产品和长寿命的关键。 该项目的主要研究目标是开发一种低成本的独特集成封装和散热器组件,并建立支持其制造所需的制造工艺。 迫切需要能够满足新兴SiC功率模块应用的热管理要求的先进封装和主动冷却解决方案,所述新兴SiC功率模块应用包括:(1)混合电动车辆(HEV)功率逆变器和转换器;(2)用于可再生能源系统(例如,太阳能电池阵列、风力发电机);以及(3)用于各种电子系统的电源(直流电源和逆变器)。该项目更广泛的影响/商业潜力是开发能够实现低成本SiC功率模块的技术。 半导体技术的进步已经导致在更高功率下操作的更小的器件,并且预测朝向更高功率半导体器件的趋势将继续。 这一趋势推动了对与半导体器件的CTE密切匹配的封装材料的需求,同时降低了封装的整体热阻。 拟议项目将开发一种基于独特封装和散热器技术集成的冷板,用于功率模块。 这种集成封装和散热器将最大限度地减少器件/封装CTE不匹配,同时与当前封装技术相比,将模块整体热阻降低60%至70%。 该技术将使功率模块具有更高的封装密度,并提高可靠性和寿命。 这些改进将直接导致功率模块成本降低30%至40%,并将成为推动SiC功率模块需求的关键 技术. 该项目研究将产生所需的关键知识,使设计和低成本制造的可靠,高效的集成封装和散热器产品用于一系列电力电子系统。 该技术的目标应用是用于HEV应用的SiC功率模块。 这项技术的发展将使包括消费者和企业在内的一系列最终用户受益。此外,考虑到广泛的功率模块应用,该技术将使商业,工业和军事高功率电子系统最终用户受益。 基于该技术的年商业产品销售额估计将在10年内增长到约1.5亿美元。 最后,封装和散热器技术的采用和广泛使用将使电子系统能够基于更有效的更高功率半导体材料(例如,SiC、氮化镓等)。 这将为社会带来更高效、更长寿命的电子产品;减少能源消耗;改善环境质量。
英文摘要
This Small Business Innovation Research (SBIR) Phase I project is focused on the development of a novel, low-cost cold plate for power module thermal management. This cold plate is enabled by a unique integrated package and heat sink assembly technology. The target application for the integrated package and heat sink assembly is high-temperature silicon carbide (SiC) power modules. SiC power modules offer significant improvements over conventional silicon power modules to include up to a 10 fold increase in power density, a 10 fold higher breakdown voltage and 90% lower switching losses. Currently, packaging technology to support SiC power module operation at temperatures of 250 oC and higher does not exist. The proposed integrated package and heat sink assembly is comprised of a ceramic-graphite-copper substrate joined to a unique, low-cost highly effective compact heat exchange surface. This integrated assembly provides for electrical isolation of the power module?s electronic components and circuitry, and minimizes the thermal resistance between the SiC devices and the heat sink coolant. Further, the assembly provides for the minimization of the coefficient of thermal expansion (CTE) mismatch between the different material layers of the assembly in order to minimize thermal stresses resulting from cyclic power and temperature operation ? key to achieving a reliable product with a long life. The primary research objectives of this project are the development of a low-cost unique integrated package and heat sink assembly and the establishment of the fabrication processes required to support its manufacture. There is a critical need for advanced packaging and active cooling solutions capable of meeting the thermal management requirements of emerging SiC power module applications which include: (1) hybrid electric vehicle (HEV) power inverters and converters; (2) power converters for renewable energy systems (e.g., solar arrays, wind generators); and (3) power supplies for a wide variety of electronic systems (DC power supplies and inverters).The broader impact/commercial potential of this project is the development of technology that will enable lower cost SiC power modules. Advances in semiconductor technology have led to smaller devices operating at higher power and the trend toward higher power semiconductor devices is forecast to continue. This trend is driving the demand for packaging materials that are closely matched to the CTE of semiconductor devices while lowering package overall thermal resistance. The proposed project will develop a cold plate based upon the integration of unique package and heat sink technologies for use in power modules. This integrated package and heat sink will minimize device/package CTE mismatch while reducing module overall thermal resistance by 60% to 70% compared to current packaging technology. This technology will enable power modules with higher packaging density and improved reliability and life. These improvements will lead directly to a power module cost reduction of 30% to 40% and will be key to driving the demand for SiC power module technology. The project research will produce the key knowledge required to enable the design and low-cost manufacture of reliable, highly effective integrated package and heat sink products for use in a range of power electronic systems. The target application for the technology is a SiC power module for use in an HEV application. This technology development will benefit a range of end user to include consumers and businesses. Further, considering the broad range of power module applications, the technology will benefit a spectrum of commercial, industrial, and military high power electronic systems end users. The annual commercial product sales based upon the technology is estimated to grow to ~$150 million over a 10 year time horizon. Finally, the adoption and wide-spread use of the package and heat sink technology will enable electronic systems based upon more efficient higher power semiconductor materials (e.g., SiC, gallium nitride, etc.). This will provide benefit to society in the form of more efficient, longer life electronics; reduced energy consumption; and improved environmental quality.
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