SBIR Phase II: Low Cost Pressure Infiltration Casting Process to Support High Volume Manufacture of Graphite-Metal Thermal Management Components

小型企业创新研究(SBIR)第二阶段项目寻求开发使用气体压力渗透铸造工艺来制造石墨-金属坯料，这些材料将用于生产大功率电子设备封装的部件。由于半导体材料的进步、更快的开关速度、电路物理结构的压缩以及器件封装的小型化，电子设备的散热率大大提高。这些市场趋势预计将持续下去，迫切需要具有更好导热性的先进材料，能够满足当前和未来高功率电子系统的封装散热要求。此外，材料需要具有热膨胀系数(CTE)，以最大限度地减少在不同材料的包装组件之间的界面处发生的CTE不匹配。第二阶段工作的目标是开发和展示具有成本效益的封装组件，其中包含导热系数在500到600 W/m-OK之间、热膨胀系数可以在5.0到10 ppm/oC之间调节的石墨-金属组件。基于石墨-金属材料技术的包装产品的市场包括：(1)用于通信系统的射频功率放大器；(2)用于电力转换系统的开关设备；以及(3)用于固态照明的发光二极管设备。这项研究将产生所需的关键知识，使低成本、大容量石墨-金属部件的生产能够满足上述应用的包装要求。这种制造技术支持的封装产品将使广泛的商业、工业和军事高功率电子终端用户受益。电子系统用石墨金属封装产品的采用和广泛使用，将使基于更高效、更高功率半导体材料的商业电子设备能够以降低能源消耗和改善环境质量的形式造福于社会。

The Small Business Innovation Research (SBIR) Phase II project seeks to develop the use of a gas pressure infiltration casting process to manufacture graphite-metal billet materials that would be used to produce components for high power electronic device packaging. The heat dissipation rate of electronic devices has increased dramatically as a result of advances in semiconductor materials, faster switching speeds, compression of circuit physical architecture, and miniaturization of device envelops. These market trends are expected to continue and there is a critical need for advanced materials with improved thermal conductivity capable of meeting the package heat dissipation requirements of current and future high power electronic systems. In addition the materials will need to have a coefficient of thermal expansion (CTE) that minimizes the CTE mismatch that occurs at the interface between packaging components of different materials. The objective of the Phase II effort is the development and demonstration of cost-effective package assemblies that incorporate graphite-metal components with a thermal conductivity of from 500 to 600 W/m-oK and a coefficient of thermal expansion that can be adjusted between 5.0 and 10 ppm/oC.The markets for packaging products based upon the graphite-metal material technology include: (1) RF power amplifiers for communications systems; (2) switching devices for power conversion systems; and (3) light emitting diode devices for solid state lighting. The research will produce the key knowledge required to enable the production of low-cost, high-volume graphite-metal components to satisfy the packaging requirements for the above applications. The packaging products supported by this manufacturing technology will benefit a broad spectrum of commercial, industrial, and military high power electronics end users. The adoption and wide-spread use of the graphite-metal packaging products for electronic systems will enable commercial electronic devices based upon more efficient higher power semiconductor materials that will provide benefit to society in the form of reduced energy consumption and improved environmental quality.