SBIR Phase I: Dielectric-Graphite-Metal Enabled Cold Plate for High Power Microelectronics

SBIR 第一阶段：用于高功率微电子器件的介电石墨金属冷板

• 批准号: 0539307
• 负责人: James Connell
• 金额: --
• 依托单位: ADVANCED THERMAL TECHNOLOGIES
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2006
• 资助国家: 美国
• 起止时间: 2006-01-01 至 2006-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0539307&HistoricalAwards=false
• 关键词: SBIR; Phase; Dielectric; Graphite; Metal

This Small Business Innovation Research Phase I project is focused on the development of a unique, high efficiency cold plate technology for application to Insulated Gate Bipolar Transistors (IGBT) modules. The cold plate is enabled by a dielectric-graphite-metal composite material which serves as the cold plate's lid and provides for electric isolation of the electronic components and circuitry, minimizes the thermal resistance between the electronics and the heat sink fluid and minimizes the thermal stresses. The research objective of this project is the development of the manufacturing process and procedures required to produce the cold plate components and assembly; and the characterization of the cold plate's thermal performance. This cold plate technology will enable the cost effective manufacture of dielectric-graphite-metal materials thatachieve the target thermal properties critical to satisfying thermal management solutions for high power applications for which existing thermal management materials are inadequate.The heat dissipation rate of electronic systems has increased dramatically as a result of ongoing advances in semiconductor materials, compression of circuit physical architecture, size reduction of packaging envelops and faster switching speed. There is a critical need for advanced active cooling solutions with improved thermal properties capable of meeting the thermal management requirements of current and future high power electronic systems. Today's high power electronics have reached heat flux levels of up to 500 W/cm2 and this level is projected to exceed 1,000 W/cm2 within several years. The market application for cold plate technology arising from this effort include power conversion systems, phased-array radar systems, high energy laser systems, telecommunication base station power electronics and high end computers.

这个小型企业创新研究第一阶段项目专注于开发一种独特的、高效的冷板技术，应用于绝缘栅双极晶体管(IGBT)模块。冷板由用作冷板盖子的电介质-石墨-金属复合材料实现，并提供电子元件和电路的电隔离，最小化电子设备和散热器流体之间的热阻，并最小化热应力。该项目的研究目标是开发生产冷板组件和组装所需的制造工艺和程序；以及冷板热性能的表征。这种冷板技术将使具有成本效益的介质-石墨-金属材料的制造达到目标热性能，对于满足现有热管理材料不足的高功率应用的热管理解决方案至关重要。由于半导体材料的不断进步、电路物理架构的压缩、封装封套的尺寸减小和更快的开关速度，电子系统的散热率已大幅提高。迫切需要先进的主动冷却解决方案，具有改进的热性能，能够满足当前和未来大功率电子系统的热管理要求。今天的高功率电子产品的热流水平已经达到了500W/cm2，预计在几年内这一水平将超过1000W/cm2。由此产生的冷板技术的市场应用包括电力转换系统、相控阵雷达系统、高能激光系统、电信基站电力电子和高端计算机。