Investigation for improved performance of new-type extremely-stable-wavelength light-emitting devices based on rare-earth-doped III-V semiconductors

基于稀土掺杂III-V族半导体的新型超稳波长发光器件性能改进研究

• 批准号: 15360164
• 负责人: FUJIWARA Yasufumi
• 金额: $ 9.54万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2003
• 资助国家: 日本
• 起止时间: 2003 至 2005
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-15360164/
• 关键词: rare-earth-doped III-V semiconductors; new semiconductor lasers; atomically-controlled growth; stimulated emission; erbium; doubleheterostructures; control of heterointerface; carrier dynamics

Rare-earth (RE) doped semiconductors have gained significant attention as a promising new class of materials that emit light from the RE 4f shell by means of electrical injection, in which the energy of electron-hole pairs is transferred to the RE shell. The intra-4f shell transitions of RE ions give rise to sharp emission lines whose wavelengths are largely independent of both the host materials and temperature. This stability occurs because the filled outer 5s and 5p electron shells screen transitions within the inner 4f electron shell from the interaction with the host. The intra-4f shell transitions from the first excited state (^4I_<13/2>) to the ground state (^4I_<15/2>) of Er^<3+> ions at around 1.5 μm is of special interest because the wavelength matches the minimum loss region of silica fibers used in optical communications.In this research project, we investigated new-type extremely-stable-wavelength light-emitting devices with Er,O-codoped GaAs (GaAs:Er,O) to get a clue for … More their improved performance. Results obtained experimentally are summarized as follows :1) Er-related luminescence was observed in GaInP/GaAs:Er,O/GaAs doubleheterostructures by injecting current at room temperature. The EL spectrum was dominated by Er-2O lines, suggesting a successful formation of the Er-2O center and preferential excitation of the center by current injection.2) The current density dependence of the EL intensity revealed an extremely large excitation cross section of Er ions by current injection, approximately 10^<-15> cm^2. The large excitation cross section was confirmed by time-resolved measurements of the EL intensity. It is by two orders in magnitude larger than that of Er-doped Si LEDs (6 x 10^<-17> cm^2).3) Carrier dynamics in GaAs:Er,O were investigated in a picosecond time scale by a pump and probe reflection technique. Time-resolved reflectivity exhibited a characteristic dip ; a steep decrease to negative in less than 1 ps and then an increase in more than 100 ps. The reflectivity increase at the initial stage, consisting of two components, depended strongly on Er concentration. The Er-concentration dependence on the components reveals that an initial faster decay is due to the capture of nonequilibrium carriers by a trap induced by Er and O codoping Less

稀土（RE）掺杂的半导体作为一类有前途的新型材料受到了极大的关注，其通过电注入从RE 4f壳层发光，其中电子-空穴对的能量被转移到RE壳层。稀土离子的4f壳层内跃迁产生尖锐的发射线，其波长在很大程度上与基质材料和温度无关。这种稳定性的发生是因为填充的外部5s和5 p电子壳层屏蔽了内部4f电子壳层内与宿主相互作用的跃迁。4f内壳层从第一激发态（^4I_<13/2>）到基态由于Er^<3+>离子在1.5 μm附近的发光波长与光纤的最小损耗区域相匹配，因此Er^<3+>离子在1.5 μm附近的发光波长（^4I_<15/2>）具有特殊的意义。共掺杂GaAs（GaAs：Er，O）获得线索 ...更多信息 他们改进的性能。实验结果如下：1）室温下，在GaInP/GaAs：Er，O/GaAs双异质结中观察到Er相关发光。EL光谱主要由Er-2 O谱线组成，这表明Er-2 O中心的成功形成以及电流注入对中心的优先激发。2）EL强度的电流密度依赖性表明电流注入对Er离子的激发截面非常大，约为10^<-15>cm ^2。大的激发截面被证实的EL强度的时间分辨测量。它比掺Er的Si LED（6 × 10^cm ^2）大两个数量级<-17>。3）通过泵浦和探测反射技术在皮秒时间尺度上研究了GaAs：Er，O中的载流子动力学。时间分辨的反射率表现出一个特征的下降，急剧下降到负小于1 ps，然后增加超过100 ps。在初始阶段的反射率增加，由两个组成部分，强烈依赖于Er浓度。Er浓度对组分的依赖性表明，初始更快的衰减是由于Er和O共掺杂诱导的陷阱捕获了非平衡载流子。

项目成果

Nonequilibrium carrier dynamics studied in Er,O-codoped GaAs by pump-probe reflection technique

利用泵浦探针反射技术研究 Er,O 共掺杂 GaAs 中的非平衡载流子动力学

• 发表时间: 2005
• 期刊: Materials Research Society Symposium Proceedings, Rare-Earth Doping for Optoelectronic Applications 866
• 作者: K.Nakamura;Y.Fujiwara;Y.Fujiwara;Y.Fujiwara
• 通讯作者: Y.Fujiwara

Injection-type light-emitting devices using rare-earth-doped III-V semiconductors

使用稀土掺杂III-V族半导体的注入型发光器件

• 发表时间: 2004
• 期刊: Oyo Buturi [in Japanese] 73(2)
• 作者: Y.Fujiwara;A.Koizumi;Y.Takeda
• 通讯作者: Y.Takeda

Direct observation of trapping of photoexcited carriers in Er,O-codoped GaAs

直接观察 Er,O 共掺杂 GaAs 中光生载流子的捕获

• 发表时间: 2006
• 期刊: Physica B 376-377
• 作者: M.de Boissieu;S.Francoual;Y.Kaneko;T.Ishimasa;K.Nakamura
• 通讯作者: K.Nakamura

Effects of S-doping and subsequent annealing on photoluminescence around 1.54μm from Er-containing ZnO

S掺杂和随后的退火对含Er ZnO 1.54μm 附近光致发光的影响

• 发表时间: 2005
• 期刊: Materials Science Forum 475-479
• 作者: Z.Zhou;N.Sato;T.Komaki;A.Koizumi;T.Komori;M.Morinaga;Y.Fujiwara;Y.Takeda
• 通讯作者: Y.Takeda

Extremely large Er excitation cross section in Er,O-codoped GaAs light emitting diodes grown by organometallic vapor phase epitaxy

有机金属气相外延法生长的 Er,O 共掺杂 GaAs 发光二极管具有极大的 Er 激发截面

• 发表时间: 2003
• 期刊: Materials Research Society Symposium Proceedings, Progress in Semiconductors II, Electronic and Optoelectronic Applications 744
• 作者: Y.Fujiwara;A.Koizumi;K.Inoue;A.Urakami;T.Yoshikane;Y.Takeda
• 通讯作者: Y.Takeda