Global Strain-Free III-Nitride Heterostructures: Growth, Structure and Near-Infrared Optical Properties

全局无应变 III 族氮化物异质结构：生长、结构和近红外光学性质

• 批准号: 1206919
• 负责人: Oana Malis
• 金额: $ 39万
• 依托单位: Purdue University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2012
• 资助国家: 美国
• 起止时间: 2012-06-01 至 2016-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1206919&HistoricalAwards=false
• 关键词: Global; Strain; Free; III; Nitride

AbstractTechnical description: The main objective of this project is to establish the relationship between growth, atomic structure and optical properties of lattice-matched and strain-balanced AlInN/(In)GaN multi-quantum well structures. In order to correlate the growth modes with microstructure and near-infrared optical properties, AlInN/(In)GaN heterostructures are grown by plasma-assisted Molecular Beam Epitaxy (MBE) on extremely high quality quasi-bulk GaN substrates, the atomic structure of the semiconductor materials is characterized in detail using high-resolution x-ray diffraction and transmission electron microscopy, while the near-infrared optical properties of the materials are examined experimentally using Fourier transform infrared spectroscopy. This project advances the understanding of MBE growth of strain-free III-nitride materials for complex infrared optoelectronic devices. Basic mechanisms of material growth such as adatom kinetics and impurity incorporation on polar and non-polar GaN substrates are studied in detail and compared. The goal is to achieve adequate understanding and control of the growth process, resulting microstructure and infrared optical properties in order to realize the theoretical potential of this material system. The fundamental and practical limitations for MBE growth, in particular for metal-modulated epitaxy, of complex nitride heterostructures are established. Non-technical description: This project investigates a new class of semiconductor materials for infrared light sources and detectors that has the potential to enable new practical applications (infrared spectroscopy, infrared imaging, and telecommunications) with broad benefits to society. This research also increases the learning opportunities for students of all ages, inside and outside the traditional classroom by integrating interdisciplinary research with broader physics and engineering education and training. In particular, the students involved in this project have the opportunity to acquire hands-on experience with the latest materials fabrication and characterization tools and techniques. The excitement of scientific discovery is conveyed to students through collaborations with several research groups in academia, industry, and national laboratories. The interaction with scientists in industry and a federally funded laboratory offers the students a different view of the scientific pursuit, as well as a better understanding of their career options. The PIs and students also will participate in outreach activities organized either in-house or at local schools to increase exposure of K-12 students and the general public to modern scientific topics at the border between physics, material science, and engineering through Purdue?s highly popular Physics on the Road Project.

摘要技术说明：本计画的主要目的是建立晶格匹配与应变平衡的AlInN/（In）GaN多量子阱结构的成长、原子结构与光学性质之间的关系。为了研究AlInN/（In）GaN异质结构的生长模式与其微结构和近红外光学性能之间的关系，采用等离子体辅助分子束外延（MBE）技术在高质量的准体GaN衬底上生长了AlInN/（In）GaN异质结构，并利用高分辨X射线衍射和透射电子显微镜对其原子结构进行了详细的表征，而材料的近红外光学性质的实验研究使用傅里叶变换红外光谱。该项目推进了对用于复杂红外光电器件的无应变III族氮化物材料的MBE生长的理解。详细研究了极性和非极性GaN衬底上材料生长的基本机制，如吸附原子动力学和杂质掺入，并进行了比较。我们的目标是实现充分的理解和控制的生长过程中，产生的微观结构和红外光学性能，以实现这种材料系统的理论潜力。MBE生长，特别是金属调制外延，复杂的氮化物异质结构的基本和实际的限制。非技术性说明：该项目研究了一类用于红外光源和探测器的新型半导体材料，这些材料有可能实现新的实际应用（红外光谱，红外成像和电信），并为社会带来广泛的利益。这项研究还通过将跨学科研究与更广泛的物理和工程教育和培训相结合，增加了传统课堂内外所有年龄段学生的学习机会。特别是，参与该项目的学生有机会获得最新材料制造和表征工具和技术的实践经验。科学发现的兴奋通过与学术界，工业界和国家实验室的几个研究小组的合作传达给学生。与工业界和联邦资助的实验室的科学家的互动为学生提供了科学追求的不同观点，以及更好地了解他们的职业选择。PI和学生还将参加内部或当地学校组织的外联活动，以增加K-12学生和公众对物理学，材料科学和工程之间边界的现代科学主题的接触。这是一个非常受欢迎的物理在路上的项目。