CAREER: Nonpolar vertical-transport III-nitride devices for near-infrared applications

职业:用于近红外应用的非极性垂直传输 III 族氮化物器件

基本信息

  • 批准号:
    1253720
  • 负责人:
  • 金额:
    $ 40万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    2013
  • 资助国家:
    美国
  • 起止时间:
    2013-02-01 至 2019-01-31
  • 项目状态:
    已结题

项目摘要

AbstractObjective: The objective of this program is to demonstrate a non-polar nitride cascade laser to fill the need for ultra-fast compact light sources tunable by design in the entire underutilized near-infrared range. The approach eliminates the adverse effects of built-in polarization fields in nitrides by engineering quantum charge-transport along the polarization-free direction perpendicular to the m-plane of GaN.Intellectual merit: The main scientific contribution is to elucidate the impact of built-in polarization fields on the performance of nitride near-infrared lasers and detectors. The program will enable a new class of versatile and ultra-fast optoelectronic devices that will immediately trigger practical applications. The novel near-infrared devices will facilitate compact, affordable consumer systems and could eventually surpass the commercial success of the blue nitride lasers.Broader impacts: The program will increase exposure of Grade 7-12 students from economically disadvantaged backgrounds in Central Indiana to the scientific content and method of photonics. A comprehensive progression of inquiry-based outreach activities was designed to maximize impact across multiple age groups. Secondary science teachers will develop and pilot lesson plans and demonstrations that incorporate concepts of infrared radiation into the high-school curriculum. Engaging hands-on activities for a science summer camp for middle-school girls will be developed and implemented. Special attention will be given to assessing the impact of these activities on the development of knowledge about the science content related to invisible regions of the electromagnetic spectrum. The integrated educational plan will leverage existing web-based tools on Purdue's nanoHUB.org for dissemination across the global research community.
摘要目的:该计划的目的是展示一种非极性氮化物级联激光器,以满足在整个未充分利用的近红外范围内设计可调的超快紧凑光源的需求。该方法消除了内置在氮化物中的极化场的不利影响,工程量子电荷传输沿着极化自由方向垂直于m-plane的GaN.智力优点:主要的科学贡献是阐明内置的极化场的氮化物近红外激光器和探测器的性能的影响。该计划将使一类新的多功能和超快的光电设备,将立即触发实际应用。新的近红外设备将有助于紧凑,负担得起的消费系统,并可能最终超过蓝色氮化物激光器的商业成功。更广泛的影响:该计划将增加7-12年级的学生从经济上处于不利地位的背景在中央印第安纳州的科学内容和光子学的方法。旨在全面推进以调查为基础的外联活动,以最大限度地扩大对多个年龄组的影响。中学科学教师将制定和试点课程计划和示范,将红外辐射的概念纳入高中课程。将为中学女生科学夏令营开发和实施参与实践活动。将特别注意评估这些活动对发展与电磁频谱不可见区域有关的科学内容的知识的影响。综合教育计划将利用普渡大学nanoHUB.org上现有的基于网络的工具,在全球研究界传播。

项目成果

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Oana Malis其他文献

Oana Malis的其他文献

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{{ truncateString('Oana Malis', 18)}}的其他基金

Infrared photonics using ferroelectric scandium-aluminum nitride semiconductors
使用铁电钪铝氮化物半导体的红外光子学
  • 批准号:
    2414283
  • 财政年份:
    2024
  • 资助金额:
    $ 40万
  • 项目类别:
    Continuing Grant
Infrared Quantum Materials Based on Scandium-Containing III-Nitrides
基于含钪III族氮化物的红外量子材料
  • 批准号:
    2004462
  • 财政年份:
    2020
  • 资助金额:
    $ 40万
  • 项目类别:
    Continuing Grant
Novel Infrared Optical Materials Based on III-Nitride Semiconductors: Growth, Structure and Properties
基于III族氮化物半导体的新型红外光学材料:生长、结构和性能
  • 批准号:
    1610893
  • 财政年份:
    2016
  • 资助金额:
    $ 40万
  • 项目类别:
    Continuing Grant
Global Strain-Free III-Nitride Heterostructures: Growth, Structure and Near-Infrared Optical Properties
全局无应变 III 族氮化物异质结构:生长、结构和近红外光学性质
  • 批准号:
    1206919
  • 财政年份:
    2012
  • 资助金额:
    $ 40万
  • 项目类别:
    Continuing Grant
Mid-infrared Semiconductor Lasers Based on Intersubband Transitions in the Valence Band of GaAs/AlAs Quantum Cascade Nanostructures
基于GaAs/AlAs量子级联纳米结构价带子带间跃迁的中红外半导体激光器
  • 批准号:
    0935899
  • 财政年份:
    2009
  • 资助金额:
    $ 40万
  • 项目类别:
    Standard Grant
Mid-infrared Semiconductor Lasers Based on Intersubband Transitions in the Valence Band of GaAs/AlAs Quantum Cascade Nanostructures
基于GaAs/AlAs量子级联纳米结构价带子带间跃迁的中红外半导体激光器
  • 批准号:
    0725384
  • 财政年份:
    2007
  • 资助金额:
    $ 40万
  • 项目类别:
    Standard Grant

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职业:使用非极性和半极性 GaN 的短波长垂直腔表面发射激光阵列
  • 批准号:
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Materials World Network: Growth of nonpolar and semipolar GaN on Si and sapphire substrates and investigation of optical processes for high efficiency
材料世界网络:硅和蓝宝石衬底上非极性和半极性 GaN 的生长以及高效率光学工艺的研究
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Materials World Network: Investigation of Nonpolar and Semipolar GaN on Si and Sapphire: Optical Processes and Efficiency
材料世界网络:硅和蓝宝石上非极性和半极性 GaN 的研究:光学工艺和效率
  • 批准号:
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非极性 m 面和半极性 GaN 上的电泵浦微腔极化子激光器
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图案化硅和蓝宝石衬底上非极性 m 面 GaN 的生长和光学特性
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