Mid-infrared Semiconductor Lasers Based on Intersubband Transitions in the Valence Band of GaAs/AlAs Quantum Cascade Nanostructures

基于GaAs/AlAs量子级联纳米结构价带子带间跃迁的中红外半导体激光器

基本信息

  • 批准号:
    0725384
  • 负责人:
  • 金额:
    $ 30万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    2007
  • 资助国家:
    美国
  • 起止时间:
    2007-08-01 至 2009-07-31
  • 项目状态:
    已结题

项目摘要

ECCS-0725384O. Malis, SUNY BinghamtonIntellectual merit: This project will investigate a new class of mid-infrared quantum cascade lasers based on Carbon-doped GaAs/AlAs nanostructures. Unlike traditional quantum cascade lasers, the proposed devices utilize hole transport and intra-valence band transitions. The major objective is to exploit the unique optical properties of hole intersubband transitions to demonstrate surface-emitting lasing in the 5-10 um range. The approach will be multi-pronged, experimental and theoretical. Hole cascaded structures will be designed, grown, and characterized. The project will focus on enhancing the understanding of the physics of hole intersubband transitions and of ultrafast hole relaxation processes in the context of a well developed semiconductor system where material quality issues are minimized. Nevertheless, the acquired knowledge will also provide invaluable insights into the prospects of infrared laser light emission in other material systems, most notably in Si/SiGe, GaN, and ZnSe. This investigation will also advance the understanding of basic mechanisms involved in molecular beam epitaxy of nanostructures and in growth of high-purity Carbon-doped GaAs.Broader Impact: The proposed new device concept for mid-infrared laser emission is expected to significantly impact spectroscopic techniques for in-situ and remote trace gas sensing. Mid-infrared surface emitting lasers would enable integration of several sensors on a single chip for simultaneous detection of several gasses with immediate benefits for applications in air quality control, health monitoring, or explosive detection. This project will also offer graduate and undergraduate students at SUNY-Binghamton unique opportunities to integrate education, training and research in both the academic and industrial research environments. Particular attention will be given to enhancing the opportunities of under-represented groups in science and engineering. The faculty and graduate students will engage in outreach activities targeted at introducing material science and technology to high-school and non-science major students, as well as to the general public. A hands-on lab-based course on the fundamental and practical aspects of nanoscale science and engineering will be developed.
的eccs - 0725384 - o。知识价值:该项目将研究一类基于碳掺杂GaAs/AlAs纳米结构的新型中红外量子级联激光器。与传统的量子级联激光器不同,所提出的器件利用空穴输运和价内带跃迁。主要目的是利用空穴子带间跃迁的独特光学特性来演示5-10 μ m范围内的表面发射激光。这种方法将是多管齐下的,既有实验又有理论。孔级联结构将被设计、生长和表征。该项目将侧重于在材料质量问题最小化的良好半导体系统的背景下,加强对空穴子带间跃迁和超快空穴弛豫过程的物理理解。然而,所获得的知识也将为红外激光在其他材料系统中的发射前景提供宝贵的见解,尤其是在Si/SiGe, GaN和ZnSe中。这项研究也将促进对纳米结构的分子束外延和高纯碳掺杂砷化镓生长的基本机制的理解。更广泛的影响:提出的中红外激光发射新设备概念预计将对原位和远程痕量气体传感的光谱技术产生重大影响。中红外表面发射激光器可以在单个芯片上集成多个传感器,同时检测几种气体,对空气质量控制、健康监测或爆炸物检测的应用有直接的好处。该项目还将为纽约州立大学宾汉姆顿分校的研究生和本科生提供独特的机会,在学术和工业研究环境中整合教育、培训和研究。将特别注意增加在科学和工程领域代表性不足的群体的机会。教师和研究生将开展向高中和非科学专业学生以及普通大众介绍材料科学和技术的宣传活动。本课程将开设以实验为基础的课程,内容涉及奈米科学与工程的基础与实务。

项目成果

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Oana Malis其他文献

Oana Malis的其他文献

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{{ truncateString('Oana Malis', 18)}}的其他基金

Infrared photonics using ferroelectric scandium-aluminum nitride semiconductors
使用铁电钪铝氮化物半导体的红外光子学
  • 批准号:
    2414283
  • 财政年份:
    2024
  • 资助金额:
    $ 30万
  • 项目类别:
    Continuing Grant
Infrared Quantum Materials Based on Scandium-Containing III-Nitrides
基于含钪III族氮化物的红外量子材料
  • 批准号:
    2004462
  • 财政年份:
    2020
  • 资助金额:
    $ 30万
  • 项目类别:
    Continuing Grant
Novel Infrared Optical Materials Based on III-Nitride Semiconductors: Growth, Structure and Properties
基于III族氮化物半导体的新型红外光学材料:生长、结构和性能
  • 批准号:
    1610893
  • 财政年份:
    2016
  • 资助金额:
    $ 30万
  • 项目类别:
    Continuing Grant
CAREER: Nonpolar vertical-transport III-nitride devices for near-infrared applications
职业:用于近红外应用的非极性垂直传输 III 族氮化物器件
  • 批准号:
    1253720
  • 财政年份:
    2013
  • 资助金额:
    $ 30万
  • 项目类别:
    Standard Grant
Global Strain-Free III-Nitride Heterostructures: Growth, Structure and Near-Infrared Optical Properties
全局无应变 III 族氮化物异质结构:生长、结构和近红外光学性质
  • 批准号:
    1206919
  • 财政年份:
    2012
  • 资助金额:
    $ 30万
  • 项目类别:
    Continuing Grant
Mid-infrared Semiconductor Lasers Based on Intersubband Transitions in the Valence Band of GaAs/AlAs Quantum Cascade Nanostructures
基于GaAs/AlAs量子级联纳米结构价带子带间跃迁的中红外半导体激光器
  • 批准号:
    0935899
  • 财政年份:
    2009
  • 资助金额:
    $ 30万
  • 项目类别:
    Standard Grant

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