Mid-infrared Semiconductor Lasers Based on Intersubband Transitions in the Valence Band of GaAs/AlAs Quantum Cascade Nanostructures
基于GaAs/AlAs量子级联纳米结构价带子带间跃迁的中红外半导体激光器
基本信息
- 批准号:0725384
- 负责人:
- 金额:$ 30万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2007
- 资助国家:美国
- 起止时间:2007-08-01 至 2009-07-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
ECCS-0725384O. Malis, SUNY BinghamtonIntellectual merit: This project will investigate a new class of mid-infrared quantum cascade lasers based on Carbon-doped GaAs/AlAs nanostructures. Unlike traditional quantum cascade lasers, the proposed devices utilize hole transport and intra-valence band transitions. The major objective is to exploit the unique optical properties of hole intersubband transitions to demonstrate surface-emitting lasing in the 5-10 um range. The approach will be multi-pronged, experimental and theoretical. Hole cascaded structures will be designed, grown, and characterized. The project will focus on enhancing the understanding of the physics of hole intersubband transitions and of ultrafast hole relaxation processes in the context of a well developed semiconductor system where material quality issues are minimized. Nevertheless, the acquired knowledge will also provide invaluable insights into the prospects of infrared laser light emission in other material systems, most notably in Si/SiGe, GaN, and ZnSe. This investigation will also advance the understanding of basic mechanisms involved in molecular beam epitaxy of nanostructures and in growth of high-purity Carbon-doped GaAs.Broader Impact: The proposed new device concept for mid-infrared laser emission is expected to significantly impact spectroscopic techniques for in-situ and remote trace gas sensing. Mid-infrared surface emitting lasers would enable integration of several sensors on a single chip for simultaneous detection of several gasses with immediate benefits for applications in air quality control, health monitoring, or explosive detection. This project will also offer graduate and undergraduate students at SUNY-Binghamton unique opportunities to integrate education, training and research in both the academic and industrial research environments. Particular attention will be given to enhancing the opportunities of under-represented groups in science and engineering. The faculty and graduate students will engage in outreach activities targeted at introducing material science and technology to high-school and non-science major students, as well as to the general public. A hands-on lab-based course on the fundamental and practical aspects of nanoscale science and engineering will be developed.
ECCS-0725384O。Malis,SUNY Binghamton智力优势:该项目将研究基于碳掺杂GaAs/AlAs纳米结构的新型中红外量子级联激光器。与传统的量子级联激光器不同,所提出的器件利用空穴传输和价带内跃迁。主要目的是利用空穴子带间跃迁的独特光学性质来演示5-10 μ m范围内的表面发射激光。该方法将是多管齐下的,实验和理论。孔级联结构将被设计,生长和表征。该项目将侧重于提高对空穴子带间跃迁和超快空穴弛豫过程的物理学的理解,在一个发达的半导体系统中,材料质量问题被最小化。尽管如此,所获得的知识也将为其他材料系统中红外激光发射的前景提供宝贵的见解,特别是在Si/SiGe,GaN和ZnSe中。这项调查也将推进分子束外延的纳米结构和高纯度的掺碳GaAs.Broader影响的增长中所涉及的基本机制的理解:拟议中红外激光发射的新设备的概念,预计将显着影响光谱技术的原位和远程微量气体传感。中红外表面发射激光器将能够在单个芯片上集成多个传感器,用于同时检测几种气体,这对于空气质量控制、健康监测或爆炸物检测中的应用具有直接的好处。该项目还将为纽约州立大学宾厄姆顿分校的研究生和本科生提供独特的机会,将教育、培训和研究融入学术和工业研究环境。将特别注意增加在科学和工程方面代表性不足的群体的机会。教师和研究生将参与旨在向高中和非科学专业学生以及公众介绍材料科学和技术的外联活动。将开发一个基于实验室的纳米科学与工程基础和实践方面的实践课程。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Oana Malis其他文献
Oana Malis的其他文献
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{{ truncateString('Oana Malis', 18)}}的其他基金
Infrared photonics using ferroelectric scandium-aluminum nitride semiconductors
使用铁电钪铝氮化物半导体的红外光子学
- 批准号:
2414283 - 财政年份:2024
- 资助金额:
$ 30万 - 项目类别:
Continuing Grant
Infrared Quantum Materials Based on Scandium-Containing III-Nitrides
基于含钪III族氮化物的红外量子材料
- 批准号:
2004462 - 财政年份:2020
- 资助金额:
$ 30万 - 项目类别:
Continuing Grant
Novel Infrared Optical Materials Based on III-Nitride Semiconductors: Growth, Structure and Properties
基于III族氮化物半导体的新型红外光学材料:生长、结构和性能
- 批准号:
1610893 - 财政年份:2016
- 资助金额:
$ 30万 - 项目类别:
Continuing Grant
CAREER: Nonpolar vertical-transport III-nitride devices for near-infrared applications
职业:用于近红外应用的非极性垂直传输 III 族氮化物器件
- 批准号:
1253720 - 财政年份:2013
- 资助金额:
$ 30万 - 项目类别:
Standard Grant
Global Strain-Free III-Nitride Heterostructures: Growth, Structure and Near-Infrared Optical Properties
全局无应变 III 族氮化物异质结构:生长、结构和近红外光学性质
- 批准号:
1206919 - 财政年份:2012
- 资助金额:
$ 30万 - 项目类别:
Continuing Grant
Mid-infrared Semiconductor Lasers Based on Intersubband Transitions in the Valence Band of GaAs/AlAs Quantum Cascade Nanostructures
基于GaAs/AlAs量子级联纳米结构价带子带间跃迁的中红外半导体激光器
- 批准号:
0935899 - 财政年份:2009
- 资助金额:
$ 30万 - 项目类别:
Standard Grant
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