Engineering Electronic Structure of 2D Semiconductors with Non-Equilibrium Processing
Engineering Electronic Structure of 2D Semiconductors with Non-Equilibrium Processing
批准号:
1306601
负责人:
Junqiao Wu
金额:
$30.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2013
资助国家:
美国
项目状态:
已结题
起止时间:
2013-07-01 至 2016-06-30
中文摘要
点击翻译按钮获取中文摘要
英文摘要
Technical Description: The research objective of this project is to tune the electronic structure of two-dimensional (2D) semiconductors by extremely off-equilibrium materials processing. For this purpose, 2D semiconductor alloys are formed by mixing the otherwise immiscible 2D semiconductors with kinetically controlled means to stabilize non-equilibrium phases, in which the electronic and structural properties are engineered on command. The resultant 2D semiconductor alloys are expected to offer a new platform for implementation of a wide variety of potential technologies that are not possible with existing materials. The specific aims of the research are to: i) alloy layered semiconductors in the 2D limit at arbitrary compositions. This is achieved using the pulsed laser alloying method, and the products are evaluated by structural and physical characterization tools; and ii) engineer electronic structure of 2D alloys by designing proper compositions and heterostructures. Their bandgap, band offsets, effective mass, and carrier dopability are designed and evaluated, and compared to density-functional theory and Green's function calculations for a comprehensive understanding. Non-technical Description: Layered semiconductors at the quantum limit are emerging as an important class of materials for innovative information and energy conversion technologies. Unlike the large number of existing bulk semiconductors, the full potential of these 2D semiconductors is limited by the small number of members currently available: mostly being transition metal chalcogenides. This project seeks to remove this limit by creating a library of 2D semiconductor alloys where the electronic structure is designed and continuously tuned to fit specific needs. Integrated with the research efforts, the project also includes a set of educational activities that stimulates and prepares pre-college students for careers in materials science and engineering. Within this project the PI: i) creates a series of hands-on exhibits and experiments for middle-high school students in partnership with the Techbridge Girls project; and ii) teams up with a campus education group to develop a summer class series in "Nanoscale Materials Science and Engineering" for underrepresented high-school students.
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
DX Centers and their mitigation in transition metal dichalcogenides
-
批准号:2140304
-
项目类别:Standard Grant
-
资助金额:$39.34万
-
财政年份:2022
-
负责人:Junqiao Wu
-
依托单位:
Smart regulation of thermal infrared radiation with meta-structured metal-insulator transition
-
批准号:1953803
-
项目类别:Standard Grant
-
资助金额:$35.88万
-
财政年份:2020
-
负责人:Junqiao Wu
-
依托单位:
I-Corps: Thermal Infrared Sensitivity Enhancer Supported Breast Cancer Screening Method
-
批准号:2024746
-
项目类别:Standard Grant
-
资助金额:$5.0万
-
财政年份:2020
-
负责人:Junqiao Wu
-
依托单位:
Emergent Electronic Behavior of Van der Waals Heterostructures from Enforced Interlayer Coupling
-
批准号:1708448
-
项目类别:Standard Grant
-
资助金额:$30.0万
-
财政年份:2017
-
负责人:Junqiao Wu
-
依托单位:
Controlling and Understanding Thermal Energy Exchange at Single Domains of Functional Materials
-
批准号:1608899
-
项目类别:Continuing Grant
-
资助金额:$40.0万
-
财政年份:2016
-
负责人:Junqiao Wu
-
依托单位:
Transducing Thermal and Optical Energies to Motion and Electricity with Coherent-Domain Ferroelastic Materials
-
批准号:1101779
-
项目类别:Standard Grant
-
资助金额:$33.54万
-
财政年份:2011
-
负责人:Junqiao Wu
-
依托单位:
CAREER: Single Functional Domain Wall Physics and Engineering with 1D Wall Waveguide
-
批准号:1055938
-
项目类别:Continuing Grant
-
资助金额:$47.5万
-
财政年份:2011
-
负责人:Junqiao Wu
-
依托单位:
Off-Equilibrium Doping of Semiconductor Nanowires
-
批准号:1000176
-
项目类别:Standard Grant
-
资助金额:$25.11万
-
财政年份:2010
-
负责人:Junqiao Wu
-
依托单位:
Implementation of Intermediate-Band Solar Cells using Multi-Band Semiconductors
-
批准号:0932905
-
项目类别:Standard Grant
-
资助金额:$35.0万
-
财政年份:2009
-
负责人:Junqiao Wu
-
依托单位:
海外基金