Engineering Electronic Structure of 2D Semiconductors with Non-Equilibrium Processing
非平衡处理二维半导体工程电子结构
基本信息
- 批准号:1306601
- 负责人:
- 金额:$ 30万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2013
- 资助国家:美国
- 起止时间:2013-07-01 至 2016-06-30
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Technical Description: The research objective of this project is to tune the electronic structure of two-dimensional (2D) semiconductors by extremely off-equilibrium materials processing. For this purpose, 2D semiconductor alloys are formed by mixing the otherwise immiscible 2D semiconductors with kinetically controlled means to stabilize non-equilibrium phases, in which the electronic and structural properties are engineered on command. The resultant 2D semiconductor alloys are expected to offer a new platform for implementation of a wide variety of potential technologies that are not possible with existing materials. The specific aims of the research are to: i) alloy layered semiconductors in the 2D limit at arbitrary compositions. This is achieved using the pulsed laser alloying method, and the products are evaluated by structural and physical characterization tools; and ii) engineer electronic structure of 2D alloys by designing proper compositions and heterostructures. Their bandgap, band offsets, effective mass, and carrier dopability are designed and evaluated, and compared to density-functional theory and Green's function calculations for a comprehensive understanding. Non-technical Description: Layered semiconductors at the quantum limit are emerging as an important class of materials for innovative information and energy conversion technologies. Unlike the large number of existing bulk semiconductors, the full potential of these 2D semiconductors is limited by the small number of members currently available: mostly being transition metal chalcogenides. This project seeks to remove this limit by creating a library of 2D semiconductor alloys where the electronic structure is designed and continuously tuned to fit specific needs. Integrated with the research efforts, the project also includes a set of educational activities that stimulates and prepares pre-college students for careers in materials science and engineering. Within this project the PI: i) creates a series of hands-on exhibits and experiments for middle-high school students in partnership with the Techbridge Girls project; and ii) teams up with a campus education group to develop a summer class series in "Nanoscale Materials Science and Engineering" for underrepresented high-school students.
技术说明:本计画的研究目标是利用极端非平衡材料制程来调整二维半导体的电子结构。为此目的,2D半导体合金通过将原本不混溶的2D半导体与动力学控制的手段混合以稳定非平衡相来形成,其中电子和结构性质根据命令进行设计。由此产生的2D半导体合金有望为实现现有材料无法实现的各种潜在技术提供新平台。该研究的具体目标是:i)在任意成分的2D极限下合金化层状半导体。这是使用脉冲激光合金化方法实现的,并且通过结构和物理表征工具对产品进行评估;以及ii)通过设计适当的组合物和异质结构来设计2D合金的电子结构。他们的带隙,带偏移,有效质量,和载流子掺杂的设计和评估,并比较密度泛函理论和绿色的功能计算的全面理解。非技术描述:量子极限的层状半导体正在成为创新信息和能量转换技术的重要材料类别。与大量现有的块状半导体不同,这些2D半导体的全部潜力受到目前可用的少量成员的限制:主要是过渡金属硫属化物。该项目旨在通过创建一个2D半导体合金库来消除这一限制,其中电子结构经过设计并不断调整以满足特定需求。与研究工作相结合,该项目还包括一系列教育活动,刺激和准备大学预科学生在材料科学和工程的职业生涯。在本项目中,PI:i)与Techbridge Girls项目合作,为中学生创建一系列动手展览和实验; ii)与校园教育团体合作,为代表性不足的高中生开发“纳米材料科学与工程”暑期班系列。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Junqiao Wu其他文献
Advanced MOSFET Structures and Processes for Sub-7 nm CMOS Technologies By Peng Zheng A dissertation submitted in partial satisfaction of the requirements for the degree of Doctor of Philosophy
用于亚 7 nm CMOS 技术的先进 MOSFET 结构和工艺 作者:彭正 部分满足哲学博士学位要求的论文
- DOI:
- 发表时间:
2016 - 期刊:
- 影响因子:0
- 作者:
Laura Waller;C. Spanos;Junqiao Wu;Peng Zheng;Tsu - 通讯作者:
Tsu
Estimate of the cosmological bispectrum from the MAXIMA-1 cosmic microwave background map.
根据 MAXIMA-1 宇宙微波背景图估计宇宙学双谱。
- DOI:
10.1103/physrevlett.88.241302 - 发表时间:
2001 - 期刊:
- 影响因子:8.6
- 作者:
Mário G. Santos;A. Balbi;A. Balbi;J. Borrill;J. Borrill;P. Ferreira;S. Hanany;A. Jaffe;Aaron T. Lee;Aaron T. Lee;J. Magueijo;B. Rabii;P. Richards;G. Smoot;R. Stompor;R. Stompor;C. Winant;Junqiao Wu - 通讯作者:
Junqiao Wu
Optical Properties of InN and Related Alloys
InN及相关合金的光学性质
- DOI:
10.1201/9781420078107-c7 - 发表时间:
2009 - 期刊:
- 影响因子:0
- 作者:
J. Yim;Junqiao Wu - 通讯作者:
Junqiao Wu
Band anticrossing in dilute nitrides
稀氮化物中的能带反交叉
- DOI:
- 发表时间:
2004 - 期刊:
- 影响因子:0
- 作者:
W. Shan;K. Yu;W. Walukiewicz;Junqiao Wu;J. Ager;E. Haller - 通讯作者:
E. Haller
Temperature Gated Thermal Rectifier
温度门控热整流器
- DOI:
- 发表时间:
2013 - 期刊:
- 影响因子:0
- 作者:
Jia Zhu;K. Hippalgaonkar;S. Shen;Kevin X Wang;Junqiao Wu;Xiaobo Yin;A. Majumdar;Xiang Zhang - 通讯作者:
Xiang Zhang
Junqiao Wu的其他文献
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{{ truncateString('Junqiao Wu', 18)}}的其他基金
DX Centers and their mitigation in transition metal dichalcogenides
DX 中心及其在过渡金属二硫属化物中的缓解
- 批准号:
2140304 - 财政年份:2022
- 资助金额:
$ 30万 - 项目类别:
Standard Grant
Smart regulation of thermal infrared radiation with meta-structured metal-insulator transition
通过元结构金属-绝缘体转变智能调节热红外辐射
- 批准号:
1953803 - 财政年份:2020
- 资助金额:
$ 30万 - 项目类别:
Standard Grant
I-Corps: Thermal Infrared Sensitivity Enhancer Supported Breast Cancer Screening Method
I-Corps:热红外灵敏度增强器支持的乳腺癌筛查方法
- 批准号:
2024746 - 财政年份:2020
- 资助金额:
$ 30万 - 项目类别:
Standard Grant
Emergent Electronic Behavior of Van der Waals Heterostructures from Enforced Interlayer Coupling
强制层间耦合范德华异质结构的涌现电子行为
- 批准号:
1708448 - 财政年份:2017
- 资助金额:
$ 30万 - 项目类别:
Standard Grant
Controlling and Understanding Thermal Energy Exchange at Single Domains of Functional Materials
控制和理解功能材料单域的热能交换
- 批准号:
1608899 - 财政年份:2016
- 资助金额:
$ 30万 - 项目类别:
Continuing Grant
Transducing Thermal and Optical Energies to Motion and Electricity with Coherent-Domain Ferroelastic Materials
利用相干域铁弹性材料将热能和光能转换为运动和电能
- 批准号:
1101779 - 财政年份:2011
- 资助金额:
$ 30万 - 项目类别:
Standard Grant
CAREER: Single Functional Domain Wall Physics and Engineering with 1D Wall Waveguide
职业:单功能畴壁物理与一维壁波导工程
- 批准号:
1055938 - 财政年份:2011
- 资助金额:
$ 30万 - 项目类别:
Continuing Grant
Off-Equilibrium Doping of Semiconductor Nanowires
半导体纳米线的非平衡掺杂
- 批准号:
1000176 - 财政年份:2010
- 资助金额:
$ 30万 - 项目类别:
Standard Grant
Implementation of Intermediate-Band Solar Cells using Multi-Band Semiconductors
使用多波段半导体实现中波段太阳能电池
- 批准号:
0932905 - 财政年份:2009
- 资助金额:
$ 30万 - 项目类别:
Standard Grant
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