Emergent Electronic Behavior of Van der Waals Heterostructures from Enforced Interlayer Coupling

强制层间耦合范德华异质结构的涌现电子行为

基本信息

  • 批准号:
    1708448
  • 负责人:
  • 金额:
    $ 30万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    2017
  • 资助国家:
    美国
  • 起止时间:
    2017-07-01 至 2020-06-30
  • 项目状态:
    已结题

项目摘要

Non-technical description: Water solidifies into ice when it is cooled below zero degree centigrade; but what is less known is that even at room temperature, application of a pressure of one GigaPascal (GPa, = 10,000 atmosphere) would drive water into ice! Now, imagine applying pressures up to a hundred times higher than that to solid materials: a rich collection of new phenomena and effects would emerge, which would shed light on our understanding of basic physics and development of useful new functionalities of these materials. This project does this on a special class of materials, layered transition metal dichalcogenides, where the interactions between neighboring layers are intrinsically weak, hence allowing an even wider range of modulation of the structure and properties by the high pressure. Integrated with the research effort, the principal investigator also runs an educational activity to create a series of hands-on exhibits and experiments for visits of middle-high school students in partnership with the local Techbridge Girls Program.Technical description: In van der Waals (vdW) materials such as transition metal dichalcogenides, physical properties such as band structures are sensitive to interlayer coupling between neighboring monolayers across the vdW gap. If the interlayer coupling of vdW materials can be artificially enhanced, one can effectively modulate the electronic dimensionality, and study scientific problems of emergent physical behavior of the system under the dimensionality modulation that would not arise otherwise. The goals of this project are to enable, discover and understand emergent electronic behavior of vdW heterostructures by maximally modulating their interlayer coupling with high pressures. These goals are achieved by utilizing diamond anvil cells to apply hydrostatic pressures up to 60 GPa onto vdW heterostructures, and probing their vibrational, optical and transport properties. Exotic new phenomena have been predicted to emerge at such extreme conditions, but have not been experimentally tested or were tested only at very low temperatures where the thermal energy is insufficient to destroy the interlayer coupling. In this project, the principal investigator and his team test and probe these predictions by drastically enhancing the interlayer coupling energy in the vdW structures such that these effects could be stabilized even at room temperature. The research is expected to bring new knowledge on vdW materials behaviour under unprecedented conditions and to push the boundary of layered materials functionality beyond current establishments.
非技术性说明:当水冷却到零摄氏度以下时会凝固成冰;但鲜为人知的是,即使在室温下,施加1千兆帕斯卡(GPa,= 10,000大气压)的压力也会将水变成冰!现在,想象一下,将比固体材料高100倍的压力施加到固体材料上:将出现丰富的新现象和效应,这将有助于我们理解基础物理学和开发这些材料的有用的新功能。该项目针对一类特殊的材料,层状过渡金属二硫属化物,其中相邻层之间的相互作用本质上很弱,因此允许通过高压对结构和性能进行更广泛的调制。与研究工作相结合,首席研究员还与当地的Techbridge Girls Program合作开展了一项教育活动,为中学生的参观创造了一系列实践展览和实验。技术描述:在诸如过渡金属二硫属化物的货车(vdW)材料中,诸如能带结构的物理性质对跨vdW带隙的相邻单层之间的层间耦合敏感。如果可以人为地增强vdW材料的层间耦合,人们可以有效地调制电子维度,并研究在维度调制下系统的涌现物理行为的科学问题,否则不会出现。该项目的目标是通过最大限度地调制高压下的层间耦合来实现,发现和理解vdW异质结构的涌现电子行为。这些目标是通过利用金刚石对顶砧单元施加高达60 GPa的流体静压到vdW异质结构上,并探测其振动,光学和输运性质来实现的。已经预测在这种极端条件下会出现奇异的新现象,但尚未进行实验测试或仅在热能不足以破坏层间耦合的非常低的温度下进行测试。在这个项目中,首席研究员和他的团队通过大幅提高vdW结构中的层间耦合能量来测试和探索这些预测,使得这些效应即使在室温下也可以稳定。这项研究有望在前所未有的条件下带来关于vdW材料行为的新知识,并将层状材料功能的边界推到现有设施之外。

项目成果

期刊论文数量(4)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Large bandgap of pressurized trilayer graphene
Synthesis of Atomically Thin Hexagonal Diamond with Compression
  • DOI:
    10.1021/acs.nanolett.0c01872
  • 发表时间:
    2020-08-12
  • 期刊:
  • 影响因子:
    10.8
  • 作者:
    Ke, Feng;Zhang, Lingkong;Chen, Bin
  • 通讯作者:
    Chen, Bin
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Junqiao Wu其他文献

Advanced MOSFET Structures and Processes for Sub-7 nm CMOS Technologies By Peng Zheng A dissertation submitted in partial satisfaction of the requirements for the degree of Doctor of Philosophy
用于亚 7 nm CMOS 技术的先进 MOSFET 结构和工艺 作者:彭正 部分满足哲学博士学位要求的论文
  • DOI:
  • 发表时间:
    2016
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Laura Waller;C. Spanos;Junqiao Wu;Peng Zheng;Tsu
  • 通讯作者:
    Tsu
Estimate of the cosmological bispectrum from the MAXIMA-1 cosmic microwave background map.
根据 MA​​XIMA-1 宇宙微波背景图估计宇宙学双谱。
  • DOI:
    10.1103/physrevlett.88.241302
  • 发表时间:
    2001
  • 期刊:
  • 影响因子:
    8.6
  • 作者:
    Mário G. Santos;A. Balbi;A. Balbi;J. Borrill;J. Borrill;P. Ferreira;S. Hanany;A. Jaffe;Aaron T. Lee;Aaron T. Lee;J. Magueijo;B. Rabii;P. Richards;G. Smoot;R. Stompor;R. Stompor;C. Winant;Junqiao Wu
  • 通讯作者:
    Junqiao Wu
Optical Properties of InN and Related Alloys
InN及相关合金的光学性质
  • DOI:
    10.1201/9781420078107-c7
  • 发表时间:
    2009
  • 期刊:
  • 影响因子:
    0
  • 作者:
    J. Yim;Junqiao Wu
  • 通讯作者:
    Junqiao Wu
Band anticrossing in dilute nitrides
稀氮化物中的能带反交叉
  • DOI:
  • 发表时间:
    2004
  • 期刊:
  • 影响因子:
    0
  • 作者:
    W. Shan;K. Yu;W. Walukiewicz;Junqiao Wu;J. Ager;E. Haller
  • 通讯作者:
    E. Haller
Temperature Gated Thermal Rectifier
温度门控热整流器
  • DOI:
  • 发表时间:
    2013
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Jia Zhu;K. Hippalgaonkar;S. Shen;Kevin X Wang;Junqiao Wu;Xiaobo Yin;A. Majumdar;Xiang Zhang
  • 通讯作者:
    Xiang Zhang

Junqiao Wu的其他文献

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{{ truncateString('Junqiao Wu', 18)}}的其他基金

DX Centers and their mitigation in transition metal dichalcogenides
DX 中心及其在过渡金属二硫属化物中的缓解
  • 批准号:
    2140304
  • 财政年份:
    2022
  • 资助金额:
    $ 30万
  • 项目类别:
    Standard Grant
Smart regulation of thermal infrared radiation with meta-structured metal-insulator transition
通过元结构金属-绝缘体转变智能调节热红外辐射
  • 批准号:
    1953803
  • 财政年份:
    2020
  • 资助金额:
    $ 30万
  • 项目类别:
    Standard Grant
I-Corps: Thermal Infrared Sensitivity Enhancer Supported Breast Cancer Screening Method
I-Corps:热红外灵敏度增强器支持的乳腺癌筛查方法
  • 批准号:
    2024746
  • 财政年份:
    2020
  • 资助金额:
    $ 30万
  • 项目类别:
    Standard Grant
Controlling and Understanding Thermal Energy Exchange at Single Domains of Functional Materials
控制和理解功能材料单域的热能交换
  • 批准号:
    1608899
  • 财政年份:
    2016
  • 资助金额:
    $ 30万
  • 项目类别:
    Continuing Grant
Engineering Electronic Structure of 2D Semiconductors with Non-Equilibrium Processing
非平衡处理二维半导体工程电子结构
  • 批准号:
    1306601
  • 财政年份:
    2013
  • 资助金额:
    $ 30万
  • 项目类别:
    Standard Grant
Transducing Thermal and Optical Energies to Motion and Electricity with Coherent-Domain Ferroelastic Materials
利用相干域铁弹性材料将热能和光能转换为运动和电能
  • 批准号:
    1101779
  • 财政年份:
    2011
  • 资助金额:
    $ 30万
  • 项目类别:
    Standard Grant
CAREER: Single Functional Domain Wall Physics and Engineering with 1D Wall Waveguide
职业:单功能畴壁物理与一维壁波导工程
  • 批准号:
    1055938
  • 财政年份:
    2011
  • 资助金额:
    $ 30万
  • 项目类别:
    Continuing Grant
Off-Equilibrium Doping of Semiconductor Nanowires
半导体纳米线的非平衡掺杂
  • 批准号:
    1000176
  • 财政年份:
    2010
  • 资助金额:
    $ 30万
  • 项目类别:
    Standard Grant
Implementation of Intermediate-Band Solar Cells using Multi-Band Semiconductors
使用多波段半导体实现中波段太阳能电池
  • 批准号:
    0932905
  • 财政年份:
    2009
  • 资助金额:
    $ 30万
  • 项目类别:
    Standard Grant

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