Implementation of Intermediate-Band Solar Cells using Multi-Band Semiconductors

使用多波段半导体实现中波段太阳能电池

基本信息

  • 批准号:
    0932905
  • 负责人:
  • 金额:
    $ 35万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    2009
  • 资助国家:
    美国
  • 起止时间:
    2009-09-01 至 2012-08-31
  • 项目状态:
    已结题

项目摘要

0932905WuThis award is funded under the American Recovery and Reinvestment Act of 2009 (Public Law 111-5).SummaryThe project is aimed at the full demonstration of an intermediate-band solar cell based on the recently discovered multi-band semiconductor alloy AlyGa1-yAs1-xNx. The research to be undertaken targets fundamental questions in photovoltaics science and technology. Can the Shockley-Queisser limit of photovoltaic efficiency in a single p-n junction be overcome? What new paradigms in solar-cell operation can be realized in a single-phase material through electronic structure engineering? The broader objectives of this program are to train undergraduate and graduate students as well as postdoctoral researchers in a collaborative environment, to transfer research innovations and concepts in energy science and policy to the classroom, and to engage the surrounding community, specifically elementary school children, in discussions and learning around energy sustainability and the role of technology. Intellectual Merit. If successful, this research program will lead to the highest ever photovoltaic efficiency, exceeding 35%, in single-junction, single-phase solar cells. Such an achievement would produce significant advancements in the understanding of solar cells based on intermediate bands - a promising device architecture that has been predicted but not yet demonstrated to yield high energy conversion efficiency, hence, potentially at much lower cost than highly efficient multi-junction solar cells. Demonstration of an intermediate-band solar cell using the multi-band semiconductor AlyGa1-yAs1-xNx epitaxially integrated into a conventional p-n junction will promote innovations in semiconductor thin-film growth and device processing. New knowledge concerning the materials physics of the multi-band semiconductors will be gained. The interaction of such a multi-band system with broad-spectrum photons has not been fully characterized and understood. Therefore, a significant portion of the proposed activities will be devoted to elucidating the photo-physics and thermodynamics of charge carriers in this novel materials system.Broader Impacts. The transformation of sunlight into electrical energy using photovoltaics has captured the imagination of not only scientists, engineers and technologists but also the public at large. Solar cell research provides exciting opportunities to engage future innovators in energy science and technology at all levels. The proposed research and education program at U.C. Berkeley will provide invaluable training and opportunities for learning to students at all stages, from elementary school to the postdoctoral level, in the San Francisco Bay Area. As an emerging industry, energy technology will experience tremendous growth, making the infusion of diversity now a critical action. The proposed outreach activities will be targeted to promoting diversity in the energy sector by the training and mentoring of scholars from diverse backgrounds.
这个奖项是根据2009年美国复苏和再投资法案(公法111-5)资助的。摘要该项目旨在全面展示基于最近发现的多波段半导体合金AlyGa1-yAs1-xNx的中波段太阳能电池。将进行的研究针对光伏科学和技术中的基本问题。单个p-n结中光伏效率的肖克利-奎瑟极限能被克服吗?通过电子结构工程可以在单相材料中实现太阳能电池运行的哪些新范式?该项目更广泛的目标是在协作环境中培训本科生和研究生以及博士后研究人员,将能源科学和政策方面的研究创新和概念转移到课堂上,并让周围社区,特别是小学生,参与围绕能源可持续性和技术作用的讨论和学习。智力上的功绩。如果成功,这项研究计划将导致单结、单相太阳能电池有史以来最高的光伏效率,超过35%。这样的成就将在理解基于中间带的太阳能电池方面产生重大进步--一种有希望的设备架构,已被预测但尚未证明能产生高能量转换效率,因此,可能比高效的多结太阳能电池的成本低得多。使用多波段半导体AlyGa1-yAs1-xNx外延集成到传统p-n结中的中间波段太阳能电池的演示将促进半导体薄膜生长和器件加工方面的创新。将获得有关多带半导体材料物理的新知识。这种多波段系统与广谱光子的相互作用还没有得到充分的表征和理解。因此,拟议活动的很大一部分将致力于阐明这一新材料系统中电荷载流子的光物理和热力学。利用光伏将阳光转化为电能不仅吸引了科学家、工程师和技术专家的想象力,也吸引了广大公众的想象力。太阳能电池研究提供了令人兴奋的机会,让未来的创新者参与到各个层面的能源科学和技术中来。加州大学伯克利分校拟议的研究和教育项目将为旧金山湾区从小学到博士后水平的所有阶段的学生提供宝贵的培训和学习机会。作为一个新兴行业,能源技术将经历巨大的增长,使多样性的注入现在成为一项关键行动。拟议的外联活动将通过培训和辅导来自不同背景的学者来促进能源部门的多样性。

项目成果

期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)

数据更新时间:{{ journalArticles.updateTime }}

{{ item.title }}
{{ item.translation_title }}
  • DOI:
    {{ item.doi }}
  • 发表时间:
    {{ item.publish_year }}
  • 期刊:
  • 影响因子:
    {{ item.factor }}
  • 作者:
    {{ item.authors }}
  • 通讯作者:
    {{ item.author }}

数据更新时间:{{ journalArticles.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ monograph.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ sciAawards.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ conferencePapers.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ patent.updateTime }}

Junqiao Wu其他文献

Advanced MOSFET Structures and Processes for Sub-7 nm CMOS Technologies By Peng Zheng A dissertation submitted in partial satisfaction of the requirements for the degree of Doctor of Philosophy
用于亚 7 nm CMOS 技术的先进 MOSFET 结构和工艺 作者:彭正 部分满足哲学博士学位要求的论文
  • DOI:
  • 发表时间:
    2016
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Laura Waller;C. Spanos;Junqiao Wu;Peng Zheng;Tsu
  • 通讯作者:
    Tsu
Estimate of the cosmological bispectrum from the MAXIMA-1 cosmic microwave background map.
根据 MA​​XIMA-1 宇宙微波背景图估计宇宙学双谱。
  • DOI:
    10.1103/physrevlett.88.241302
  • 发表时间:
    2001
  • 期刊:
  • 影响因子:
    8.6
  • 作者:
    Mário G. Santos;A. Balbi;A. Balbi;J. Borrill;J. Borrill;P. Ferreira;S. Hanany;A. Jaffe;Aaron T. Lee;Aaron T. Lee;J. Magueijo;B. Rabii;P. Richards;G. Smoot;R. Stompor;R. Stompor;C. Winant;Junqiao Wu
  • 通讯作者:
    Junqiao Wu
Optical Properties of InN and Related Alloys
InN及相关合金的光学性质
  • DOI:
    10.1201/9781420078107-c7
  • 发表时间:
    2009
  • 期刊:
  • 影响因子:
    0
  • 作者:
    J. Yim;Junqiao Wu
  • 通讯作者:
    Junqiao Wu
Band anticrossing in dilute nitrides
稀氮化物中的能带反交叉
  • DOI:
  • 发表时间:
    2004
  • 期刊:
  • 影响因子:
    0
  • 作者:
    W. Shan;K. Yu;W. Walukiewicz;Junqiao Wu;J. Ager;E. Haller
  • 通讯作者:
    E. Haller
Temperature Gated Thermal Rectifier
温度门控热整流器
  • DOI:
  • 发表时间:
    2013
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Jia Zhu;K. Hippalgaonkar;S. Shen;Kevin X Wang;Junqiao Wu;Xiaobo Yin;A. Majumdar;Xiang Zhang
  • 通讯作者:
    Xiang Zhang

Junqiao Wu的其他文献

{{ item.title }}
{{ item.translation_title }}
  • DOI:
    {{ item.doi }}
  • 发表时间:
    {{ item.publish_year }}
  • 期刊:
  • 影响因子:
    {{ item.factor }}
  • 作者:
    {{ item.authors }}
  • 通讯作者:
    {{ item.author }}

{{ truncateString('Junqiao Wu', 18)}}的其他基金

DX Centers and their mitigation in transition metal dichalcogenides
DX 中心及其在过渡金属二硫属化物中的缓解
  • 批准号:
    2140304
  • 财政年份:
    2022
  • 资助金额:
    $ 35万
  • 项目类别:
    Standard Grant
Smart regulation of thermal infrared radiation with meta-structured metal-insulator transition
通过元结构金属-绝缘体转变智能调节热红外辐射
  • 批准号:
    1953803
  • 财政年份:
    2020
  • 资助金额:
    $ 35万
  • 项目类别:
    Standard Grant
I-Corps: Thermal Infrared Sensitivity Enhancer Supported Breast Cancer Screening Method
I-Corps:热红外灵敏度增强器支持的乳腺癌筛查方法
  • 批准号:
    2024746
  • 财政年份:
    2020
  • 资助金额:
    $ 35万
  • 项目类别:
    Standard Grant
Emergent Electronic Behavior of Van der Waals Heterostructures from Enforced Interlayer Coupling
强制层间耦合范德华异质结构的涌现电子行为
  • 批准号:
    1708448
  • 财政年份:
    2017
  • 资助金额:
    $ 35万
  • 项目类别:
    Standard Grant
Controlling and Understanding Thermal Energy Exchange at Single Domains of Functional Materials
控制和理解功能材料单域的热能交换
  • 批准号:
    1608899
  • 财政年份:
    2016
  • 资助金额:
    $ 35万
  • 项目类别:
    Continuing Grant
Engineering Electronic Structure of 2D Semiconductors with Non-Equilibrium Processing
非平衡处理二维半导体工程电子结构
  • 批准号:
    1306601
  • 财政年份:
    2013
  • 资助金额:
    $ 35万
  • 项目类别:
    Standard Grant
Transducing Thermal and Optical Energies to Motion and Electricity with Coherent-Domain Ferroelastic Materials
利用相干域铁弹性材料将热能和光能转换为运动和电能
  • 批准号:
    1101779
  • 财政年份:
    2011
  • 资助金额:
    $ 35万
  • 项目类别:
    Standard Grant
CAREER: Single Functional Domain Wall Physics and Engineering with 1D Wall Waveguide
职业:单功能畴壁物理与一维壁波导工程
  • 批准号:
    1055938
  • 财政年份:
    2011
  • 资助金额:
    $ 35万
  • 项目类别:
    Continuing Grant
Off-Equilibrium Doping of Semiconductor Nanowires
半导体纳米线的非平衡掺杂
  • 批准号:
    1000176
  • 财政年份:
    2010
  • 资助金额:
    $ 35万
  • 项目类别:
    Standard Grant

相似国自然基金

相似海外基金

A novel stacked structure of intermediate band cells for higher efficiency
一种新颖的中带电池堆叠结构,可提高效率
  • 批准号:
    22K04211
  • 财政年份:
    2022
  • 资助金额:
    $ 35万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Mobility requirements in intermediate band solar cells
中波段太阳能电池的迁移率要求
  • 批准号:
    564162-2021
  • 财政年份:
    2021
  • 资助金额:
    $ 35万
  • 项目类别:
    University Undergraduate Student Research Awards
Origins of Unique Optical Properties in Intermediate Band Nanocrystals
中带纳米晶体独特光学性质的起源
  • 批准号:
    2003431
  • 财政年份:
    2020
  • 资助金额:
    $ 35万
  • 项目类别:
    Standard Grant
Photovoltaic conversion mechanism in intermediate band solar cells using multiple-bandgap semiconductors
使用多带隙半导体的中能带太阳能电池的光伏转换机制
  • 批准号:
    19H02661
  • 财政年份:
    2019
  • 资助金额:
    $ 35万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Effect of magnetic impurity doping in CuGaS2 for Intermediate Band Solar Cells
CuGaS2 中磁性杂质掺杂对中能带太阳能电池的影响
  • 批准号:
    18K04224
  • 财政年份:
    2018
  • 资助金额:
    $ 35万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Intermediate band solar cell based on transition metal substituted Indium thiospinels
基于过渡金属取代的铟硫尖晶石的中波段太阳能电池
  • 批准号:
    411083473
  • 财政年份:
    2018
  • 资助金额:
    $ 35万
  • 项目类别:
    Research Grants
Research on high-efficiency intermediate band tandem solar cells based on dilute nitride alloys
基于稀氮化合金的高效中能带叠层太阳能电池研究
  • 批准号:
    17KK0127
  • 财政年份:
    2018
  • 资助金额:
    $ 35万
  • 项目类别:
    Fund for the Promotion of Joint International Research (Fostering Joint International Research)
Intermediate Band Solar Cells Based on Triplet-Triplet Annihilation
基于三重态-三重态湮灭的中波段太阳能电池
  • 批准号:
    DE160100504
  • 财政年份:
    2016
  • 资助金额:
    $ 35万
  • 项目类别:
    Discovery Early Career Researcher Award
Tangible operation of intermediate-band solar cells with quantum-dot superlattices controlling the minibands
具有控制微带的量子点超晶格的中带太阳能电池的有形操作
  • 批准号:
    15K13953
  • 财政年份:
    2015
  • 资助金额:
    $ 35万
  • 项目类别:
    Grant-in-Aid for Challenging Exploratory Research
Control of optical and electronic properties of high-quality multiple-band gap semiconductors for intermediate band solar cells
用于中带太阳能电池的高质量多带隙半导体的光学和电子特性的控制
  • 批准号:
    15H04253
  • 财政年份:
    2015
  • 资助金额:
    $ 35万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
{{ showInfoDetail.title }}

作者:{{ showInfoDetail.author }}

知道了