InAs-based nanowires on silicon platform for novel nanoscale high electron mobility heterojunction devices

硅平台上的 InAs 基纳米线用于新型纳米级高电子迁移率异质结器件

基本信息

项目摘要

Central objective of this project is the realization of advanced InAs nanowire (NW)-based high electron mobility devices fabricated by catalyst-free, site-selective molecular beam epitaxy, with a focus on vertical surround gate (VSG) tunnel-junction field effect transistors (TJ-NWFET) on silicon. Two complementary directions will be targeted: (a) microstructure-electrical transport property correla-tions in back-gated InAs NWFETs to identify the role of structural defects, distinct crystal phases and dopants, and set the base for optimized NW structures implemented into (b) high-performance InAs VSG-TJ-NWFETs, including core-shell high electron mobility transistor (HEMT) devices. The micro-structure-electrical transport studies will be conducted via gated 2-(4)-terminal current-voltage (I-V) measurements (temperature- and electric field-dependent), as well as by spatially resolved electrical scanning probe microscopy techniques. For the VSG-TJ-NWFET architectures on Si large emphasis will be on carrier transport across the InAs-Si tunnel junction (inter-band tunneling characteristics, negative differential resistance, etc.) controlled by band tuning mainly via doping, and investigated in reverse and forward bias conditions to derive the characteristic junction quality properties. Further-more, undoped and modulation-doped In(Ga,Al)As-InAs core-shell HEMT structures are designed for enhanced carrier confinement inside the NW core and suppression of surface scattering. These structures will be studied by the full spectrum of materials characterization methods, as well as theoretical model calculations of electronic transport of confined charge carriers in 1D/2DEG core-shell NW systems. This project may not only provide interesting insights into the performance of not yet investigated MBE-grown InAs NWFETs, but may open up also new directions for future development of InAs NW-based diode applications, such as photovoltaic and photodetection devices.
该项目的中心目标是实现先进的InAs纳米线(NW)为基础的高电子迁移率器件制造的无催化剂,选址分子束外延,重点是垂直环绕栅极(VSG)隧道结场效应晶体管(TJ-NWFET)的硅。两个互补的方向将是有针对性的:(a)在背栅InAs NWFET的微结构-电输运性质的相关性,以确定结构缺陷,不同的晶相和掺杂剂的作用,并设置的基础,优化NW结构实施到(B)高性能InAs VSG-TJ-NWFET,包括核-壳高电子迁移率晶体管(HEMT)设备。将通过门控2-(4)-端子电流-电压(I-V)测量(依赖于温度和电场)以及空间分辨电扫描探针显微镜技术进行微结构-电传输研究。对于硅上的VSG-TJ-NWFET架构,重点将放在跨InAs-Si隧道结的载流子输运(带间隧穿特性、负微分电阻等)上。通过主要经由掺杂的带调谐来控制,并且在反向和正向偏置条件下进行研究以导出特征结质量特性。此外,未掺杂和调制掺杂的In(Ga,Al)As-InAs核壳HEMT结构被设计用于增强NW核内的载流子限制和抑制表面散射。这些结构将通过材料表征方法的全光谱以及1D/2DEG核壳NW系统中受限电荷载流子的电子输运的理论模型计算进行研究。该项目不仅可以提供有趣的见解尚未调查MBE生长的InAs NWFET的性能,但也可能开辟新的方向,为未来发展的InAs NW为基础的二极管应用,如光伏和光电探测设备。

项目成果

期刊论文数量(14)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Size, composition, and doping effects on In(Ga)As nanowire/Si tunnel diodes probed by conductive atomic force microscopy
  • DOI:
    10.1063/1.4768001
  • 发表时间:
    2012-12
  • 期刊:
  • 影响因子:
    4
  • 作者:
    Tao Yang;S. Hertenberger;S. Morkötter;G. Abstreiter;G. Koblmüller
  • 通讯作者:
    Tao Yang;S. Hertenberger;S. Morkötter;G. Abstreiter;G. Koblmüller
Photocurrents in a Single InAs Nanowire/Silicon Heterojunction.
  • DOI:
    10.1021/acsnano.5b03017
  • 发表时间:
    2015-09
  • 期刊:
  • 影响因子:
    17.1
  • 作者:
    A. Brenneis;Jan Overbeck;J. Treu;S. Hertenberger;S. Morkötter;M. Döblinger;J. Finley;G. Abstreiter;G. Koblmüller;A. Holleitner
  • 通讯作者:
    A. Brenneis;Jan Overbeck;J. Treu;S. Hertenberger;S. Morkötter;M. Döblinger;J. Finley;G. Abstreiter;G. Koblmüller;A. Holleitner
Enhanced luminescence properties of InAs-InAsP core-shell nanowires.
  • DOI:
    10.1021/nl403341x
  • 发表时间:
    2013-11
  • 期刊:
  • 影响因子:
    10.8
  • 作者:
    J. Treu;M. Bormann;H. Schmeiduch;M. Döblinger;S. Morkötter;S. Matich;P. Wiecha;K. Saller;B. Mayer;M. Bichler;M. Amann;J. Finley;G. Abstreiter;G. Koblmüller
  • 通讯作者:
    J. Treu;M. Bormann;H. Schmeiduch;M. Döblinger;S. Morkötter;S. Matich;P. Wiecha;K. Saller;B. Mayer;M. Bichler;M. Amann;J. Finley;G. Abstreiter;G. Koblmüller
High mobility one- and two-dimensional electron systems in nanowire-based quantum heterostructures.
  • DOI:
    10.1021/nl403561w
  • 发表时间:
    2013-12
  • 期刊:
  • 影响因子:
    10.8
  • 作者:
    S. Funk;M. Royo;I. Zardo;D. Rudolph;S. Morkötter;B. Mayer;J. Becker;A. Bechtold;S. Matich;M. Döblinger;M. Bichler;G. Koblmüller;J. Finley;A. Bertoni;G. Goldoni;G. Abstreiter
  • 通讯作者:
    S. Funk;M. Royo;I. Zardo;D. Rudolph;S. Morkötter;B. Mayer;J. Becker;A. Bechtold;S. Matich;M. Döblinger;M. Bichler;G. Koblmüller;J. Finley;A. Bertoni;G. Goldoni;G. Abstreiter
Rate-limiting mechanisms in high-temperature growth of catalyst-free InAs nanowires with large thermal stability
  • DOI:
    10.1088/0957-4484/23/23/235602
  • 发表时间:
    2012-06-15
  • 期刊:
  • 影响因子:
    3.5
  • 作者:
    Hertenberger, S.;Rudolph, D.;Koblmueller, G.
  • 通讯作者:
    Koblmueller, G.
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Privatdozent Dr. Gregor Koblmüller其他文献

Privatdozent Dr. Gregor Koblmüller的其他文献

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{{ truncateString('Privatdozent Dr. Gregor Koblmüller', 18)}}的其他基金

One-dimensional carrier systems in nanowire-based semiconductor heterostructures
基于纳米线的半导体异质结构中的一维载流子系统
  • 批准号:
    323412876
  • 财政年份:
    2017
  • 资助金额:
    --
  • 项目类别:
    Research Grants
DFG-RSF: Nonequilibrium Phenomena and Interactions in Ultrapure III-V Nanowires
DFG-RSF:超纯 III-V 纳米线中的非平衡现象和相互作用
  • 批准号:
    310339015
  • 财政年份:
    2016
  • 资助金额:
    --
  • 项目类别:
    Research Grants
Rare Earth:Photoconductors for Terahertz Generation and Detection
稀土:用于太赫兹产生和检测的光电导体
  • 批准号:
    278381540
  • 财政年份:
    2015
  • 资助金额:
    --
  • 项目类别:
    Research Grants
Advanced thermoelectric properties in 1D quantum-confined core-shell nanowire heterostructures
一维量子限制核壳纳米线异质结构的先进热电性能
  • 批准号:
    456688860
  • 财政年份:
  • 资助金额:
    --
  • 项目类别:
    Research Grants

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