SNM: Atomically Precise, Defect Free, DNA Masks with Embedded Metrology

该资助解决了半导体行业在创建下一代存储设备时面临的技术和政策障碍。该资助的目标是：（I）实现由合成DNA制成的原子级精确、无缺陷的图案的大批量制造，（II）使用在线光学技术自我报告缺陷，以监测大批量生产期间图案的质量控制，以及（III）创建一个政策框架，指导可扩展纳米制造中的公私合作。如果成功，解决这些工业挑战将有助于：（A）验证分子自组装作为可扩展纳米制造的成本有效的制造工艺，（B）建立用于可扩展纳米制造的新工艺技术，（C）克服纳米级半导体器件制造中的关键障碍，以及（D）解决DNA作为工程纳米材料的大规模生产和使用的社会影响。该研究还将推进发现，创新，并在爱达荷州，EPSCoR状态的科学和工程的整体知识为基础的繁荣。

This grant addresses the technical and policy barriers confronted by the semiconductor industry in creating next generation memory devices. The objectives of the grant are to: (I) enable high-volume manufacturing of atomically-precise, defect-free patterns made from synthetic DNA, (II) self-report defects using an in-line optical technique to monitor the quality control of patterns during high-volume production, and (III) create a policy framework that guides public-private collaborations in scalable nanomanufacturing.If successful, solving these industrial challenges will help: (A) validate molecular self-assembly as a cost-effective manufacturing process for scalable nanomanufacturing, (B) establish novel process techniques for scalable nanomanufacturing, (C) overcome critical roadblocks in semiconductor device fabrication at the nanoscale, and (D) address societal implications of the large-scale production and use of DNA as an engineered nanomaterial. The research will also advance the discovery, innovation, and overall knowledge-based prosperity of science and engineering in Idaho, an EPSCoR State.