Deterministic simulation of electron and phonon transport in III-V devices

III-V 器件中电子和声子输运的确定性模拟

• 批准号: 215913023
• 负责人: Professor Dr.-Ing. Christoph Jungemann
• 金额: --
• 依托单位: Institut für Theoretische Elektrotechnik (ITHE)
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2013
• 资助国家: 德国
• 起止时间: 2012-12-31 至 2022-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/215913023?language=en
• 关键词: Deterministic; simulation; electron; phonon; transport

Leading-edge III–V semiconductor devices are pushing electronics to higher frequencies such that they can be used, for example, in safety applications like near field radar for cars or in high speed data transmission. These extremely fast devices with transit and maximum oscillation frequencies beyond 300GHz can be no longer modeled with classical Technology Computer Aided Design (TCAD) tools and more fundamental simulation approaches based on the Boltzmann equation are required. Since electron transport and due to self-heating, which degrades the device performace, phonon transport are of importance in these devices, Boltzmann equations have to be solved for both types of particles in a self-consistent manner. This requires a numerical approach, which goes beyond the possibilities of the state-of-the-art Monte Carlo simulators. Recently a deterministic Boltzmann equation solver has been developed for silicon devices, which has all the required TCAD features and can simulate the stationary and small-signal device characteristics and electronic noise. This simulator will be extended to III-V materials including phonons. The main focus of the project will be on the development of the thermal part of the simulator, which will be based on a spherical harmonics expansion like the electron part. In order to use the simulator in a design process, it must be numerically stable and efficient. The newly developed simulator will be used to investigate real devices, for which the measurement data will be provided by a partner, and to explore the ultimate limits of III-V devices.

领先的 III-V 族半导体器件正在将电子产品推向更高的频率，以便它们可用于汽车近场雷达等安全应用或高速数据传输。这些传输频率和最大振荡频率超过 300GHz 的极快器件无法再使用经典技术计算机辅助设计 (TCAD) 工具进行建模，而是需要基于玻尔兹曼方程的更基本的仿真方法。由于电子传输和自加热会降低器件性能，声子传输在这些器件中非常重要，因此必须以自洽的方式求解两种类型粒子的玻尔兹曼方程。这需要一种数值方法，这超出了最先进的蒙特卡罗模拟器的可能性。最近开发了一种适用于硅器件的确定性玻尔兹曼方程求解器，它具有 TCAD 所需的所有功能，可以模拟稳态和小信号器件特性以及电子噪声。该模拟器将扩展到包括声子在内的 III-V 族材料。该项目的主要重点将是模拟器热部分的开发，该部分将像电子部分一样基于球谐函数展开。为了在设计过程中使用模拟器，它必须在数值上稳定且高效。新开发的模拟器将用于研究真实器件（其测量数据将由合作伙伴提供），并探索 III-V 器件的最终极限。