Design and Characterisation of Basic Components for 160 Gbit/s Data Rate in 0.13 µm SiGe:C Hetero Bipolar Technology

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Subject of the proposed project is the development of key components, which enable data rates up to 160 Gbit/s by electronic means for the first time. The project is based on the SG13G2 technology of IHP, which was released for academic access recently. In close context with integrated circuit design, test methods are to be devised, because appropriate commercial measurement equipment is not available.In the first project phase, a PLL, and as its essential parts a VCO and frequencydivider, are to be developed.On this basis, a multiplexer for the generation of 160 Gbit/s data streams istargeted in the final project year.