I/UCRC FRP: Physics-Based Compact Modeling of Gallium Nitride (GaN) Devices for Advanced Power Electronics

I/UCRC FRP：先进电力电子氮化镓 (GaN) 器件基于物理的紧凑建模

• 批准号: 1535689
• 负责人: Homer Mantooth
• 金额: $ 19.84万
• 依托单位: University of Arkansas
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2015
• 资助国家: 美国
• 起止时间: 2015-08-01 至 2018-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1535689&HistoricalAwards=false
• 关键词: UCRC; FRP; Physics; Based; Compact

Advances in wide bandgap materials such as silicon carbide (SiC) and gallium nitride (GaN) have led to substantial advances in power semiconductor devices and are now positioned to dominate the next generation of power electronics replacing silicon devices. This research focuses on the creation and validation of analytical models for state-of-the-art GaN power devices. The market share of GaN devices is expected to reach a staggering $15.6 billion by 2022, mainly due to growing demands in the power and energy sector, the communication infrastructure sector, and the power electronics market. GaN devices are expected to reduce overall energy conversion losses down to 1%, resulting in an annual savings of nearly $40 billion in US revenues. A high-efficiency and green energy infrastructure is vital for reducing overall expenditures and reducing the carbon footprint of the electronics industry on the environment. Silicon power semiconductor device models have been estimated to have an annual economic impact in excess of $40 million per year based on improved design productivity. The expected outcome from this fundamental research effort focuses on developing physics-based compact device models for circuit simulations that will help electronics engineers rapidly develop circuit designs and prototypes based on GaN devices. Impacts of this model will enable a side-by-side comparison of GaN and silicon devices at the design analysis phase. This in turn will likely promote increased usage of GaN semiconductor technology. The models generated by this research will be open access and made publicly accessible on the NSF Industry/University Cooperative Research Center on Grid-connected Advanced Power Electronic Systems (GRAPES). This research will develop and validate a physics-based compact device model for GaN power devices. The model will be derived analytically, based on the physics of carrier transport in the device layers as derived mathematically and observed through finite element simulations of device structures. The model, once derived and implemented, will be validated against experimentally measured data of commercially available GaN devices taken at University of Arkansas research laboratory facilities in collaboration with the industry partners of GRAPES. Once validated, a model parameter extraction method will be created so that users of the model can execute this procedure to obtain the parameters necessary to tailor the model's behavior to specific devices they may choose to employ from the various GaN power device suppliers in the world. The characterized model, when used in circuit simulations, will help electronics engineers to design and manufacture a wide range of GaN-based circuits that will increase the penetration of GaN devices in the US power, energy, communications, and transportation infrastructure.

碳化硅（SiC）和氮化镓（GaN）等宽带隙材料的进步已经导致功率半导体器件的实质性进步，并且现在定位于主导取代硅器件的下一代功率电子器件。这项研究的重点是创建和验证最先进的GaN功率器件的分析模型。到2022年，GaN器件的市场份额预计将达到惊人的156亿美元，这主要是由于电力和能源部门、通信基础设施部门以及电力电子市场的需求不断增长。GaN器件有望将整体能量转换损失降低至1%，从而每年为美国节省近400亿美元的收入。高效和绿色能源基础设施对于降低电子行业的总体支出和减少对环境的碳足迹至关重要。硅功率半导体器件模型已被估计具有超过4000万美元的年度经济影响，每年基于改进的设计生产力。这项基础研究工作的预期成果集中在开发基于物理的紧凑型器件模型，用于电路模拟，这将有助于电子工程师快速开发基于GaN器件的电路设计和原型。 该模型的影响将使GaN和硅器件在设计分析阶段的并排比较成为可能。 这反过来可能会促进GaN半导体技术的使用。这项研究所产生的模型将开放获取，并在NSF工业/大学并网先进电力电子系统合作研究中心（GRAPES）上公开访问。这项研究将开发和验证一个基于物理的紧凑型器件模型的GaN功率器件。该模型将推导出解析，在器件层中的载流子传输的物理基础上，数学推导和观察通过有限元模拟的设备结构。该模型，一旦推导和实施，将验证实验测量数据的商业GaN器件采取在阿肯色州大学的研究实验室设施与GRAPES的行业合作伙伴。一旦验证，将创建模型参数提取方法，以便模型的用户可以执行此过程，以获得必要的参数，以根据他们可能选择使用的来自世界上各种GaN功率器件供应商的特定器件来定制模型的行为。当用于电路仿真时，该模型将帮助电子工程师设计和制造各种GaN基电路，从而增加GaN器件在美国电力、能源、通信和交通基础设施中的渗透率。