PFI:AIR - TT: Application Specific Data Acquisition Using High Temperature Silicon Carbide CMOS
PFI:AIR - TT: Application Specific Data Acquisition Using High Temperature Silicon Carbide CMOS
批准号:
1465243
负责人:
Homer Mantooth
金额:
$20.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2015
资助国家:
美国
项目状态:
已结题
起止时间:
2015-05-01 至 2017-09-30
中文摘要
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英文摘要
This PFI: AIR Technology Translation project focuses on translating silicon carbide (SiC) integrated circuit technology to fill the need for extreme environment electronics, which, in turn, facilitates improvements in energy efficiency and enables new system architectures for mobile transportation systems. Within the broader scope of integrated circuitry, analog-to-digital and digital-to-analog converters are the subject of this activity. High temperature SiC analog-to-digital data converters (SiC ADCs) are important because they can reside within an internal combustion engine or electric vehicle engine and convert analog sensor data to a digital form before transmission to the vehicle?s control computer. This will have the impact of increasing data rates, improving signal integrity, reducing shielding requirements on cabling, and enabling the potential for wireless transmission of data in the future. The project will result in a prototype of a SiC-based data acquisition system (DAQ) for extreme environment applications utilizing SiC ADCs. The SiC DAQ system has the main unique feature that it can survive very high temperatures ( 300°C). This provides the advantage of being able to sense and convert key data parameters in-situ at temperatures exceeding 300°C, a capability not currently available, which will improve the reliability and fuel efficiency for all types of vehicles (planes, trains, automobiles). The design and manufacture of SiC materials for uses outside of simple power devices requires new design for manufacturing (DFM) techniques. This project addresses the following technology gaps as it translates from research discovery towards commercial application: 1) to understand and mitigate the manufacturing variability of SiC-CMOS (complementary metal oxide semiconductor); and 2) to qualify the reliability of a full-scale component. To do this, the team will assemble a demonstration unit that has sufficient capability to illustrate the potential for the technology while being sufficiently simple to support extensive test and characterization for reliability in a real world application. In addition, personnel involved in this project, masters and doctoral students in electrical engineering, will receive first-hand technology translation experience through the design activities undertaken that proceed from the feasibility to prototype phase with serious consideration of the eventual product.The project engages Ozark Integrated Circuits of Fayetteville, Arkansas in guiding the commercialization aspects of the technology as it transitions from feasibility proof to prototype in this technology translation effort from research discovery toward commercial reality.
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Mid-Scale RI-1 (M1:IP): Implementation of a National Silicon Carbide Research Fabrication Facility
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批准号:2131972
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项目类别:Cooperative Agreement
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资助金额:$1787.48万
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财政年份:2021
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负责人:Homer Mantooth
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依托单位:
Phase III IUCRC at University of Arkansas: Center for Grid-Connected Advanced Power Electronics Systems (GRAPES)
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批准号:1939144
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项目类别:Continuing Grant
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资助金额:$50.0万
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财政年份:2020
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负责人:Homer Mantooth
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依托单位:
MsRI-EW: Mid-scale Research Infrastructure Engineering Workshop for National Silicon Carbide Fabrication Facility. To Be Held Virtually August 13-14, 2020.
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批准号:2035356
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项目类别:Standard Grant
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资助金额:$1.0万
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财政年份:2020
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负责人:Homer Mantooth
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依托单位:
Phase II Grant Industry University Cooperative Research Center (IUCRC) for GRid-connected Advanced Power Electronic Systems (GRAPES), University of Arkansas
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批准号:1747757
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项目类别:Standard Grant
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资助金额:$20.0万
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财政年份:2018
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负责人:Homer Mantooth
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依托单位:
I/UCRC FRP: Physics-Based Compact Modeling of Gallium Nitride (GaN) Devices for Advanced Power Electronics
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批准号:1535689
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项目类别:Standard Grant
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资助金额:$19.84万
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财政年份:2015
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负责人:Homer Mantooth
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依托单位:
GOALI: Multi-Objective Layout Optimization for Multi-Chip Power Electronic Modules
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批准号:1509787
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项目类别:Standard Grant
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资助金额:$36.38万
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财政年份:2015
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负责人:Homer Mantooth
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依托单位:
I/UCRC Phase II: Grid-connected Advanced Power Electronic Systems (GRAPES)
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批准号:1439700
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项目类别:Continuing Grant
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资助金额:$45.49万
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财政年份:2014
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负责人:Homer Mantooth
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依托单位:
PFI-BIC: Silicon Carbide Integrated Circuits for Ultra-high Efficiency Power Electronics
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批准号:1237816
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项目类别:Standard Grant
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资助金额:$60.0万
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财政年份:2012
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负责人:Homer Mantooth
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依托单位:
I/UCRC - GOALI Fundamental Research: Gallium Nitride Optical Isolation for Wide Bandgap Power Electronic Systems
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批准号:1032063
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项目类别:Standard Grant
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资助金额:$10.0万
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财政年份:2010
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负责人:Homer Mantooth
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依托单位:
Collaborative Research: I/UCRC on Grid-Connected Advanced Power Electronic Systems (GRAPES)
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批准号:0934390
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项目类别:Standard Grant
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资助金额:$56.5万
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财政年份:2009
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负责人:Homer Mantooth
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依托单位:
COLLABORATIVE PROPOSAL: I/UCRC: Center for Grid-Connected Advanced Power Electronic Systems (GRAPES)
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批准号:0832538
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项目类别:Standard Grant
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资助金额:$1.0万
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财政年份:2008
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负责人:Homer Mantooth
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依托单位:
MRI: Acquisition of Unique, High-Power Instrumentation for Future Distribution Systems Test and Evaluation
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批准号:0723195
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项目类别:Standard Grant
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资助金额:$37.0万
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财政年份:2007
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负责人:Homer Mantooth
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依托单位:
GOALI: Compact Modeling of Silicon Carbide (SIC) Devices for Advanced Power Switching Applications
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批准号:0424411
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项目类别:Standard Grant
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资助金额:$0.0万
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财政年份:2004
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负责人:Homer Mantooth
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依托单位:
Modeling Silicon Carbide Devices for Power Supply Performance Evaluation
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批准号:0115534
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项目类别:Standard Grant
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资助金额:$27.02万
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财政年份:2001
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负责人:Homer Mantooth
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依托单位:
CRCD: Recent Developments into the Mixed-Signal/Telecommunications Curriculum
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批准号:0088011
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项目类别:Standard Grant
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资助金额:$40.97万
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财政年份:2001
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负责人:Homer Mantooth
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依托单位:
国内基金
海外基金
湍流和化学交互作用对H2-Air-H2O微混燃烧中NO生成的影响研究
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批准号:51976048
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项目类别:面上项目
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资助金额:61.0万元
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批准年份:2019
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负责人:邱朋华
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依托单位: