PFI:AIR - TT: Application Specific Data Acquisition Using High Temperature Silicon Carbide CMOS

这个PFI: AIR技术翻译项目专注于转换碳化硅（SiC）集成电路技术，以满足极端环境电子产品的需求，这反过来又促进了能源效率的提高，并为移动运输系统提供了新的系统架构。在更广泛的集成电路范围内，模数转换器和数模转换器是这一活动的主题。高温SiC模数数据转换器（SiC adc）非常重要，因为它们可以安装在内燃机或电动汽车发动机中，并在传输到车辆之前将模拟传感器数据转换为数字形式。S控制计算机。这将提高数据速率，改善信号完整性，减少对电缆的屏蔽要求，并使未来的数据无线传输成为可能。该项目将产生一个基于SiC的数据采集系统（DAQ）的原型，用于利用SiC adc的极端环境应用。SiC DAQ系统的主要独特之处在于它可以在非常高的温度（300°C）下生存。这种技术的优势在于能够在超过300°C的温度下感知和转换关键数据参数，这是目前无法实现的，这将提高所有类型车辆（飞机、火车、汽车）的可靠性和燃油效率。设计和制造用于简单功率器件以外的SiC材料需要新的制造设计（DFM）技术。该项目解决了从研究发现到商业应用的以下技术差距：1)了解和减轻SiC-CMOS（互补金属氧化物半导体）的制造可变性；2)验证全尺寸部件的可靠性。为了做到这一点，团队将组装一个演示单元，该演示单元具有足够的能力来说明该技术的潜力，同时足够简单，可以支持在现实世界应用中进行广泛的测试和可靠性表征。此外，参与该项目的人员，电气工程专业的硕士和博士生，将通过从可行性到原型阶段的设计活动，认真考虑最终产品，获得第一手的技术翻译经验。该项目与阿肯色州费耶特维尔的Ozark集成电路公司合作，指导该技术的商业化方面，从可行性证明到原型，从研究发现到商业现实的技术转化工作。

This PFI: AIR Technology Translation project focuses on translating silicon carbide (SiC) integrated circuit technology to fill the need for extreme environment electronics, which, in turn, facilitates improvements in energy efficiency and enables new system architectures for mobile transportation systems. Within the broader scope of integrated circuitry, analog-to-digital and digital-to-analog converters are the subject of this activity. High temperature SiC analog-to-digital data converters (SiC ADCs) are important because they can reside within an internal combustion engine or electric vehicle engine and convert analog sensor data to a digital form before transmission to the vehicle?s control computer. This will have the impact of increasing data rates, improving signal integrity, reducing shielding requirements on cabling, and enabling the potential for wireless transmission of data in the future. The project will result in a prototype of a SiC-based data acquisition system (DAQ) for extreme environment applications utilizing SiC ADCs. The SiC DAQ system has the main unique feature that it can survive very high temperatures ( 300°C). This provides the advantage of being able to sense and convert key data parameters in-situ at temperatures exceeding 300°C, a capability not currently available, which will improve the reliability and fuel efficiency for all types of vehicles (planes, trains, automobiles). The design and manufacture of SiC materials for uses outside of simple power devices requires new design for manufacturing (DFM) techniques. This project addresses the following technology gaps as it translates from research discovery towards commercial application: 1) to understand and mitigate the manufacturing variability of SiC-CMOS (complementary metal oxide semiconductor); and 2) to qualify the reliability of a full-scale component. To do this, the team will assemble a demonstration unit that has sufficient capability to illustrate the potential for the technology while being sufficiently simple to support extensive test and characterization for reliability in a real world application. In addition, personnel involved in this project, masters and doctoral students in electrical engineering, will receive first-hand technology translation experience through the design activities undertaken that proceed from the feasibility to prototype phase with serious consideration of the eventual product.The project engages Ozark Integrated Circuits of Fayetteville, Arkansas in guiding the commercialization aspects of the technology as it transitions from feasibility proof to prototype in this technology translation effort from research discovery toward commercial reality.