Mid-Scale RI-1 (M1:IP): Implementation of a National Silicon Carbide Research Fabrication Facility
中型 RI-1 (M1:IP):实施国家碳化硅研究制造设施
基本信息
- 批准号:2131972
- 负责人:
- 金额:$ 1787.48万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Cooperative Agreement
- 财政年份:2021
- 资助国家:美国
- 起止时间:2021-10-01 至 2026-09-30
- 项目状态:未结题
- 来源:
- 关键词:
项目摘要
Silicon carbide (SiC) is a emerging and transformative semiconductor technology, enabling innovation across a broad range of groundbreaking research and revolutionary growing markets, including: (1) the transition from the internal combustion engine to all-electric vehicles, (2) modernization of the electric power grid through advanced solar inverters and protection equipment, and (3) powering data centers to provide greater reliability and efficiency, all of which will significantly impact American lives through more efficient use of energy, a cleaner environment, and economic growth. This NSF project aims to establish a national Multi-User SiC (MUSiC) fabrication facility, located on the University of Arkansas campus, is an open facility that can support US research and industrial interests, expertise, and ingenuity to drive the development of SiC integrated circuits and devices. This will be achieved by creating a unique fabrication laboratory with the necessary equipment and instrumentation to realize the necessary semiconductor processes, train students on them, and execute the processes to achieve low-volume prototypes for US academic and industrial users. MUSiC will produce higher temperature electronics, sensors, and optoelectronics that can survive in geothermal wells, gas turbines and many other industrial processes, and extreme environment locations such as Venus. The broader impacts of the project will unleash American ingenuity and help develop a needed workforce in the semiconductor fabrication industry, while bridging a gap between ideas formulated in the lab to high volume production provided by industry. The proposed MUSiC research fab line at the UA includes the semiconductor processing equipment such as oxidation, annealing, etching, metallization and associated metrology tools. It will create a national solution to the instrumentation access, knowledge-gap, and bottlenecks that are impeding progress and ingenuity in SiC material, devices, and circuits. This will be achieved through three primary objectives: (1) Deploy the equipment and processes that become the baseline of the MUSiC fab line to enable years of competitive research by all US researchers at universities, small and large businesses, and government organizations; (2) bridge the gap between the low-volume prototyping specialization of research universities and high-volume production for US manufacturing; and (3) Provide student training and education for future leaders of SiC technology in both research and industrial settings to encourage US growth in this field.This project is jointly funded by the Office of Integrative Activities (OIA) and the Established Program to Stimulate Competitive Research (EPSCoR) at NSF.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
碳化硅(SiC)是一种新兴的变革性半导体技术,可在广泛的突破性研究和革命性增长市场中实现创新,包括:(1)从内燃机到全电动汽车的过渡;(2)通过先进的太阳能逆变器和保护设备实现电网的现代化;(3)为数据中心提供更高的可靠性和效率,所有这些都将通过更有效地利用能源、更清洁的环境和经济增长,对美国人的生活产生重大影响。该NSF项目旨在建立一个位于阿肯色大学校园的国家多用户SiC (MUSiC)制造设施,这是一个开放的设施,可以支持美国的研究和工业利益,专业知识和创造力,以推动SiC集成电路和器件的发展。这将通过创建一个独特的制造实验室来实现必要的设备和仪器,以实现必要的半导体工艺,培训学生,并执行工艺,为美国学术和工业用户实现小批量原型。MUSiC将生产温度更高的电子产品、传感器和光电子产品,这些产品可以在地热井、燃气轮机和许多其他工业过程中生存,也可以在金星等极端环境中生存。该项目的广泛影响将释放美国人的聪明才智,帮助培养半导体制造行业所需的劳动力,同时弥合实验室构想与工业大批量生产之间的差距。提议在UA的MUSiC研究生产线包括半导体加工设备,如氧化,退火,蚀刻,金属化和相关的计量工具。它将为仪器获取、知识差距和阻碍SiC材料、器件和电路进步和创新的瓶颈创造一个全国性的解决方案。这将通过三个主要目标来实现:(1)部署成为MUSiC晶圆生产线基线的设备和工艺,使所有美国大学、小型和大型企业以及政府组织的研究人员能够进行多年的竞争性研究;(2)弥合研究型大学的小批量原型专业化与美国制造业的大批量生产之间的差距;(3)在研究和工业环境中为SiC技术的未来领导者提供学生培训和教育,以鼓励美国在该领域的发展。该项目由美国国家科学基金会综合活动办公室(OIA)和促进竞争性研究的既定计划(EPSCoR)共同资助。该奖项反映了美国国家科学基金会的法定使命,并通过使用基金会的知识价值和更广泛的影响审查标准进行评估,被认为值得支持。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Homer Mantooth其他文献
Homer Mantooth的其他文献
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{{ truncateString('Homer Mantooth', 18)}}的其他基金
Phase III IUCRC at University of Arkansas: Center for Grid-Connected Advanced Power Electronics Systems (GRAPES)
阿肯色大学第三阶段 IUCRC:并网先进电力电子系统中心 (GRAPES)
- 批准号:
1939144 - 财政年份:2020
- 资助金额:
$ 1787.48万 - 项目类别:
Continuing Grant
MsRI-EW: Mid-scale Research Infrastructure Engineering Workshop for National Silicon Carbide Fabrication Facility. To Be Held Virtually August 13-14, 2020.
MsRI-EW:国家碳化硅制造设施中型研究基础设施工程研讨会。
- 批准号:
2035356 - 财政年份:2020
- 资助金额:
$ 1787.48万 - 项目类别:
Standard Grant
Phase II Grant Industry University Cooperative Research Center (IUCRC) for GRid-connected Advanced Power Electronic Systems (GRAPES), University of Arkansas
阿肯色大学并网先进电力电子系统 (GRAPES) 工业大学合作研究中心 (IUCRC) 第二期拨款
- 批准号:
1747757 - 财政年份:2018
- 资助金额:
$ 1787.48万 - 项目类别:
Standard Grant
I/UCRC FRP: Physics-Based Compact Modeling of Gallium Nitride (GaN) Devices for Advanced Power Electronics
I/UCRC FRP:先进电力电子氮化镓 (GaN) 器件基于物理的紧凑建模
- 批准号:
1535689 - 财政年份:2015
- 资助金额:
$ 1787.48万 - 项目类别:
Standard Grant
PFI:AIR - TT: Application Specific Data Acquisition Using High Temperature Silicon Carbide CMOS
PFI:AIR - TT:使用高温碳化硅 CMOS 进行特定应用数据采集
- 批准号:
1465243 - 财政年份:2015
- 资助金额:
$ 1787.48万 - 项目类别:
Standard Grant
GOALI: Multi-Objective Layout Optimization for Multi-Chip Power Electronic Modules
GOALI:多芯片电力电子模块的多目标布局优化
- 批准号:
1509787 - 财政年份:2015
- 资助金额:
$ 1787.48万 - 项目类别:
Standard Grant
I/UCRC Phase II: Grid-connected Advanced Power Electronic Systems (GRAPES)
I/UCRC 第二阶段:并网先进电力电子系统(GRAPES)
- 批准号:
1439700 - 财政年份:2014
- 资助金额:
$ 1787.48万 - 项目类别:
Continuing Grant
PFI-BIC: Silicon Carbide Integrated Circuits for Ultra-high Efficiency Power Electronics
PFI-BIC:用于超高效率电力电子的碳化硅集成电路
- 批准号:
1237816 - 财政年份:2012
- 资助金额:
$ 1787.48万 - 项目类别:
Standard Grant
I/UCRC - GOALI Fundamental Research: Gallium Nitride Optical Isolation for Wide Bandgap Power Electronic Systems
I/UCRC - GOALI 基础研究:宽带隙电力电子系统的氮化镓光隔离
- 批准号:
1032063 - 财政年份:2010
- 资助金额:
$ 1787.48万 - 项目类别:
Standard Grant
Collaborative Research: I/UCRC on Grid-Connected Advanced Power Electronic Systems (GRAPES)
合作研究:I/UCRC 并网先进电力电子系统 (GRAPES)
- 批准号:
0934390 - 财政年份:2009
- 资助金额:
$ 1787.48万 - 项目类别:
Standard Grant
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