Mid-Scale RI-1 (M1:IP): Implementation of a National Silicon Carbide Research Fabrication Facility

中型 RI-1 (M1:IP)：实施国家碳化硅研究制造设施

• 批准号: 2131972
• 负责人: Homer Mantooth
• 金额: $ 1787.48万
• 依托单位: University of Arkansas
• 依托单位国家: 美国
• 项目类别: Cooperative Agreement
• 财政年份: 2021
• 资助国家: 美国
• 起止时间: 2021-10-01 至 2026-09-30
• 项目状态: 未结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2131972&HistoricalAwards=false
• 关键词: Mid; Scale; RI; M1; IP

Silicon carbide (SiC) is a emerging and transformative semiconductor technology, enabling innovation across a broad range of groundbreaking research and revolutionary growing markets, including: (1) the transition from the internal combustion engine to all-electric vehicles, (2) modernization of the electric power grid through advanced solar inverters and protection equipment, and (3) powering data centers to provide greater reliability and efficiency, all of which will significantly impact American lives through more efficient use of energy, a cleaner environment, and economic growth. This NSF project aims to establish a national Multi-User SiC (MUSiC) fabrication facility, located on the University of Arkansas campus, is an open facility that can support US research and industrial interests, expertise, and ingenuity to drive the development of SiC integrated circuits and devices. This will be achieved by creating a unique fabrication laboratory with the necessary equipment and instrumentation to realize the necessary semiconductor processes, train students on them, and execute the processes to achieve low-volume prototypes for US academic and industrial users. MUSiC will produce higher temperature electronics, sensors, and optoelectronics that can survive in geothermal wells, gas turbines and many other industrial processes, and extreme environment locations such as Venus. The broader impacts of the project will unleash American ingenuity and help develop a needed workforce in the semiconductor fabrication industry, while bridging a gap between ideas formulated in the lab to high volume production provided by industry. The proposed MUSiC research fab line at the UA includes the semiconductor processing equipment such as oxidation, annealing, etching, metallization and associated metrology tools. It will create a national solution to the instrumentation access, knowledge-gap, and bottlenecks that are impeding progress and ingenuity in SiC material, devices, and circuits. This will be achieved through three primary objectives: (1) Deploy the equipment and processes that become the baseline of the MUSiC fab line to enable years of competitive research by all US researchers at universities, small and large businesses, and government organizations; (2) bridge the gap between the low-volume prototyping specialization of research universities and high-volume production for US manufacturing; and (3) Provide student training and education for future leaders of SiC technology in both research and industrial settings to encourage US growth in this field.This project is jointly funded by the Office of Integrative Activities (OIA) and the Established Program to Stimulate Competitive Research (EPSCoR) at NSF.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

碳化硅（SIC）是一种新兴而变革性的半导体技术，可以在广泛的开创性研究和革命性的市场上进行创新，包括：（1）从内燃烧引擎到全电动车辆到全电动车辆的过渡，（2）通过高级电动效率的效率，可在实体和保护设备中获得更大的效率，从而使电动效率更大，并在且具有较大的效率上，以实现效率，并在3. 3）中心效率（3）效率（3）且（3）美国通过更有效地利用能源，更清洁的环境和经济增长来生活。这个NSF项目旨在建立位于阿肯色大学校园的国家多用户SIC（音乐）制造设施，是一个开放式设施，可以支持美国的研究和工业利益，专业知识和创造力，以推动SIC综合电路和设备的开发。这将通过使用必要的设备和仪器创建独特的制造实验室来实现这一目标，以实现必要的半导体流程，培训学生并执行这些流程，以为美国的学术和工业用户实现低容量的原型。音乐将产生较高的温度电子，传感器和光电子，这些电子产品可以在地热井，燃气轮机和许多其他工业过程中生存，以及金星等极端环境地点。该项目的更广泛的影响将释放美国的创造力，并有助于发展半导体制造行业所需的劳动力，同时弥合实验室在实验室中提出的思想之间的差距，从行业提供的大量生产。 UA的拟议音乐研究工厂系列包括半导体处理设备，例如氧化，退火，蚀刻，金属化和相关的计量工具。它将为仪器访问，知识差距和瓶颈创造一个国家解决方案，这些解决方案阻碍了SIC材料，设备和电路的进步和创造力。这将通过三个主要目标实现：（1）部署成为音乐工厂线基线的设备和流程，以使所有美国大学，大小企业以及政府组织的美国研究人员多年的竞争研究； （2）弥合了研究型大学的低体积原型专业化与美国制造业的大量生产之间的差距； （3）在研究和工业环境中为SIC技术的未来领导者提供学生培训和教育，以鼓励我们在这一领域的发展。该项目由NSF的NSF的竞争研究（OIA）和既定的竞争研究（EPSCOR）共同资助，这是NSF奖励的竞争者，反映了NSF的法定任务和审查的范围。