Mid-Scale RI-1 (M1:IP): Implementation of a National Silicon Carbide Research Fabrication Facility

中型 RI-1 (M1:IP)：实施国家碳化硅研究制造设施

• 批准号: 2131972
• 负责人: Homer Mantooth
• 金额: $ 1787.48万
• 依托单位: University of Arkansas
• 依托单位国家: 美国
• 项目类别: Cooperative Agreement
• 财政年份: 2021
• 资助国家: 美国
• 起止时间: 2021-10-01 至 2026-09-30
• 项目状态: 未结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2131972&HistoricalAwards=false
• 关键词: Mid; Scale; RI; M1; IP

Silicon carbide (SiC) is a emerging and transformative semiconductor technology, enabling innovation across a broad range of groundbreaking research and revolutionary growing markets, including: (1) the transition from the internal combustion engine to all-electric vehicles, (2) modernization of the electric power grid through advanced solar inverters and protection equipment, and (3) powering data centers to provide greater reliability and efficiency, all of which will significantly impact American lives through more efficient use of energy, a cleaner environment, and economic growth. This NSF project aims to establish a national Multi-User SiC (MUSiC) fabrication facility, located on the University of Arkansas campus, is an open facility that can support US research and industrial interests, expertise, and ingenuity to drive the development of SiC integrated circuits and devices. This will be achieved by creating a unique fabrication laboratory with the necessary equipment and instrumentation to realize the necessary semiconductor processes, train students on them, and execute the processes to achieve low-volume prototypes for US academic and industrial users. MUSiC will produce higher temperature electronics, sensors, and optoelectronics that can survive in geothermal wells, gas turbines and many other industrial processes, and extreme environment locations such as Venus. The broader impacts of the project will unleash American ingenuity and help develop a needed workforce in the semiconductor fabrication industry, while bridging a gap between ideas formulated in the lab to high volume production provided by industry. The proposed MUSiC research fab line at the UA includes the semiconductor processing equipment such as oxidation, annealing, etching, metallization and associated metrology tools. It will create a national solution to the instrumentation access, knowledge-gap, and bottlenecks that are impeding progress and ingenuity in SiC material, devices, and circuits. This will be achieved through three primary objectives: (1) Deploy the equipment and processes that become the baseline of the MUSiC fab line to enable years of competitive research by all US researchers at universities, small and large businesses, and government organizations; (2) bridge the gap between the low-volume prototyping specialization of research universities and high-volume production for US manufacturing; and (3) Provide student training and education for future leaders of SiC technology in both research and industrial settings to encourage US growth in this field.This project is jointly funded by the Office of Integrative Activities (OIA) and the Established Program to Stimulate Competitive Research (EPSCoR) at NSF.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

碳化硅（SiC）是一种新兴的变革性半导体技术，能够在广泛的突破性研究和革命性增长的市场中实现创新，包括：（1）从内燃机转向全电动汽车，（2）通过先进的太阳能逆变器和保护设备实现电网现代化，以及（3）为数据中心提供动力，以提供更高的可靠性和效率，所有这些都将通过更有效地使用能源、更清洁的环境和经济增长来显著影响美国人的生活。该NSF项目旨在建立一个位于阿肯色州大学校园内的国家多用户SiC（MUSiC）制造设施，该设施是一个开放式设施，可以支持美国的研究和工业利益，专业知识和独创性，以推动SiC集成电路和器件的发展。这将通过创建一个独特的制造实验室来实现，该实验室配备必要的设备和仪器，以实现必要的半导体工艺，对学生进行培训，并执行这些工艺，为美国学术和工业用户实现小批量原型。MUSiC将生产更高温度的电子产品，传感器和光电产品，这些产品可以在地热威尔斯，燃气轮机和许多其他工业过程中以及金星等极端环境中使用。该项目的更广泛影响将释放美国的独创性，并帮助发展半导体制造行业所需的劳动力，同时弥合实验室制定的想法与工业提供的大批量生产之间的差距。拟议中的MUSiC研究工厂线包括半导体加工设备，如氧化，退火，蚀刻，金属化和相关的计量工具。它将为阻碍SiC材料、器件和电路进步和独创性的仪器访问、知识差距和瓶颈创造一个国家解决方案。这将通过三个主要目标来实现：（1）部署成为MUSiC晶圆厂线基线的设备和工艺，使美国所有大学、小型和大型企业以及政府组织的研究人员能够进行多年的竞争性研究;（2）弥合研究型大学的小批量原型专业化与美国制造业的大批量生产之间的差距;以及（3）在研究和工业环境中为SiC技术的未来领导者提供学生培训和教育，以鼓励美国在这一领域的发展。该项目由综合活动办公室（OIA）和促进竞争研究的既定计划（EPSCoR）共同资助。该奖项反映了NSF的法定使命，并通过使用基金会的知识价值和更广泛的影响审查标准进行评估，被认为值得支持。