PFI-BIC: Silicon Carbide Integrated Circuits for Ultra-high Efficiency Power Electronics

PFI-BIC：用于超高效率电力电子的碳化硅集成电路

• 批准号: 1237816
• 负责人: Homer Mantooth
• 金额: $ 60万
• 依托单位: University of Arkansas
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2012
• 资助国家: 美国
• 起止时间: 2012-09-01 至 2015-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1237816&HistoricalAwards=false
• 关键词: PFI; BIC; Silicon; Carbide; Integrated

This Partnerships for Innovation project from the University of Arkansas (UA) will focus on the exploration and definition of an integrated circuit research platform based on silicon carbide (SiC) technology to develop gate driver and digital control circuitry for integration into advanced power electronic modules with the aim of achieving higher performing integrated power electronics in terms of size, weight, efficiency, and robustness. It is these modules that serve as the basic building blocks of a vast array of equipment including electrified transportation; heating, ventilation, and air conditioning; energy exploration; renewable energy and storage interfaces; and grid-connected power electronics. With approximately 30% of all power produced in the U.S. passing through a power electronic converter or motor drive before it reaches its end use, it is crucial that power electronic systems operate as reliably and efficiently as possible. The U.S. DoE estimates that this percentage will increase to 80% over the next 15 years. Wide bandgap-based power electronics, particularly those made with SiC, have been shown to vastly reduce losses ( 50%); while simultaneously increasing power density, resiliency, and reliability. Even though part cost is higher for SiC devices versus silicon, in many cases, overall system costs are reduced through simpler thermal management due to the higher temperature performance offered by SiC.The broader impacts of this research include developing leading-edge mixed-signal circuitry for use in power electronic modules that will influence a vast array of products used by millions in the U.S. In addition, there are the economic impacts of stimulating the creation of numerous jobs, differentiation in the marketplace for the core partners, and fostering a customer-supplier relationship through the three partners as the technologies mature. With the anticipated growth described above, the market potential for these technologies is clearly in the billions of dollars. Another impact is on an emerging workforce. This project will educate graduate and undergraduate students in building innovation capacity to be followed by accelerating innovations. It will also help to attract K-12 students to the electronics field as a relatively mature research platform undergoes a transformation.Partners at the inception of the project include the Department of Electrical Engineering and the Department of Computer Science & Computer Engineering at the University of Arkansas, Fayetteville; two small businesses in Fayetteville: Ozark Integrated Circuits and Arkansas Power Electronics International; and Raytheon, a large U.S. company.

来自阿肯色州大学（UA）的这一创新合作伙伴项目将专注于探索和定义基于碳化硅（SiC）技术的集成电路研究平台，以开发集成到先进电力电子模块中的栅极驱动器和数字控制电路，目的是在尺寸、重量、效率和鲁棒性方面实现更高性能的集成电力电子。正是这些模块充当了大量设备的基本构建模块，包括电气化运输;供暖，通风和空调;能源勘探;可再生能源和存储接口;以及并网电力电子。在美国，大约有30%的电力在到达最终用途之前要经过电力电子转换器或电机驱动器，因此电力电子系统尽可能可靠和高效地运行至关重要。美国能源部估计，这一比例将在未来15年内增加到80%。基于宽带隙的电力电子器件，特别是用SiC制成的电力电子器件，已被证明可以大大降低损耗（50%），同时提高功率密度、弹性和可靠性。尽管SiC器件的部件成本高于硅器件，但在许多情况下，由于SiC提供了更高的温度性能，通过更简单的热管理降低了整体系统成本。这项研究的更广泛影响包括开发用于电力电子模块的前沿混合信号电路，这将影响美国数百万人使用的大量产品。随着技术的成熟，刺激创造大量就业机会、核心伙伴在市场上的差异化以及通过三个伙伴促进客户----供应商关系，都有经济影响。随着上述预期的增长，这些技术的市场潜力显然是数十亿美元。另一个影响是新兴劳动力。该项目将教育研究生和本科生建设创新能力，然后加快创新。随着一个相对成熟的研究平台正在经历转型，这也将有助于吸引K-12学生进入电子领域。该项目的合作伙伴包括费耶特维尔阿肯色州大学的电气工程系和计算机科学&计算机工程系;费耶特维尔的两家小企业：Ozark集成电路公司和阿肯色州电力电子国际公司;和美国大型公司雷神公司。