MsRI-EW: Mid-scale Research Infrastructure Engineering Workshop for National Silicon Carbide Fabrication Facility. To Be Held Virtually August 13-14, 2020.
MsRI-EW: Mid-scale Research Infrastructure Engineering Workshop for National Silicon Carbide Fabrication Facility. To Be Held Virtually August 13-14, 2020.
批准号:
2035356
负责人:
Homer Mantooth
金额:
$1.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2020
资助国家:
美国
项目状态:
已结题
起止时间:
2020-07-01 至 2020-12-31
中文摘要
非技术性:基于碳化硅(SiC)的微电子器件研究缺乏原型基础设施,限制了美国的研究和产品发现。缺乏这样的基础设施迫使企业在国外开展活动(如果有的话),并减缓电子系统创新的进展。该愿景是一个独特的SiC研究设施,将激发从材料生长和加工到器件和电路制造的创新。这一基础设施将填补该国研究能力的一个关键缺口。会议将使学术研究人员和学生以及来自行业和国家实验室的合作者受益。这将是一个虚拟会议,因此在线出席将扩大其影响。技术:本次研讨会的目的是确定开放式碳化硅(SiC)制造设施的关键需求和用户支持,以增强美国研究获得下一代电力电子产品的小批量原型的能力。会议将:(i)组织领先的SiC研究人员和关键参与者评估研究界的现状和基础设施需求;(ii)包括具有中等规模基础设施管理经验的个人进行指导;(iii)为研究人员提供一个平台,以满足并参与关于SiC材料,器件和电路研究未来方向的客观和建设性对话,并明确定义所需的基础设施;(iv)允许研究人员就围绕功率半导体驱动生态系统的国家SiC制造设施可以解决的研究领域交换意见; (v)评估这种中等规模研究基础设施可以提供的更广泛的影响。该会议将确定国家对此类研究基础设施的需求,并提供计划,以缩小国家需求的差距。该奖项反映了NSF的法定使命,并被认为值得通过使用基金会的知识价值和更广泛的影响审查标准进行评估来支持。
英文摘要
Nontechnical:The absence of prototyping infrastructure for research into microelectronic devices based on silicon carbide (SiC) limits US research and product discovery. The absence of such infrastructure forces activity abroad, if it occurs at all, and slows progress on innovation of electronic systems. The vision is of a unique SiC research facility that will spark innovation from growth and processing of materials, to device and circuit fabrication. This infrastructure would address a key gap in the nation’s research capabilities. The conference will benefit academic researchers and students as well as collaborators from industry and national laboratories. This will be a virtual conference and so online attendance will magnify its impact. The conference will identify potential impacts and spur the design and implementation of an open access SiC fabrication facility.Technical:The purpose of this workshop is to identify the critical needs and user support for an openly-accessible silicon carbide (SiC) fabrication facility that can enhance the US research access to low-volume prototyping of the next generation of power electronics. The conference will: (i) Organize leading SiC researchers and key players to evaluate the current state and infrastructure needs of research community; (ii) Include individuals with experience in the management of mid-scale infrastructure for mentoring; (iii) Provide a platform for researchers to meet and engage in objective and constructive dialog about future directions for SiC research in materials, devices, and circuits and clearly define the needed infrastructure; (iv) Allow researchers to exchange ideas on research areas that can be addressed by the national SiC fabrication facility that surrounds the power semiconductor driven ecosystem.; (v) Assess broader impacts that this mid-scale research infrastructure can provide. The conference will identify national needs for such research infrastructure, and provide plans to close the identified gap in national needs.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
Mid-Scale RI-1 (M1:IP): Implementation of a National Silicon Carbide Research Fabrication Facility
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批准号:2131972
-
项目类别:Cooperative Agreement
-
资助金额:$1787.48万
-
财政年份:2021
-
负责人:Homer Mantooth
-
依托单位:
Phase III IUCRC at University of Arkansas: Center for Grid-Connected Advanced Power Electronics Systems (GRAPES)
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批准号:1939144
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项目类别:Continuing Grant
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资助金额:$50.0万
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财政年份:2020
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负责人:Homer Mantooth
-
依托单位:
Phase II Grant Industry University Cooperative Research Center (IUCRC) for GRid-connected Advanced Power Electronic Systems (GRAPES), University of Arkansas
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批准号:1747757
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项目类别:Standard Grant
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资助金额:$20.0万
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财政年份:2018
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负责人:Homer Mantooth
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依托单位:
I/UCRC FRP: Physics-Based Compact Modeling of Gallium Nitride (GaN) Devices for Advanced Power Electronics
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批准号:1535689
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项目类别:Standard Grant
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资助金额:$19.84万
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财政年份:2015
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负责人:Homer Mantooth
-
依托单位:
PFI:AIR - TT: Application Specific Data Acquisition Using High Temperature Silicon Carbide CMOS
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批准号:1465243
-
项目类别:Standard Grant
-
资助金额:$20.0万
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财政年份:2015
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负责人:Homer Mantooth
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依托单位:
GOALI: Multi-Objective Layout Optimization for Multi-Chip Power Electronic Modules
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批准号:1509787
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项目类别:Standard Grant
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资助金额:$36.38万
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财政年份:2015
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负责人:Homer Mantooth
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依托单位:
I/UCRC Phase II: Grid-connected Advanced Power Electronic Systems (GRAPES)
-
批准号:1439700
-
项目类别:Continuing Grant
-
资助金额:$45.49万
-
财政年份:2014
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负责人:Homer Mantooth
-
依托单位:
PFI-BIC: Silicon Carbide Integrated Circuits for Ultra-high Efficiency Power Electronics
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批准号:1237816
-
项目类别:Standard Grant
-
资助金额:$60.0万
-
财政年份:2012
-
负责人:Homer Mantooth
-
依托单位:
I/UCRC - GOALI Fundamental Research: Gallium Nitride Optical Isolation for Wide Bandgap Power Electronic Systems
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批准号:1032063
-
项目类别:Standard Grant
-
资助金额:$10.0万
-
财政年份:2010
-
负责人:Homer Mantooth
-
依托单位:
Collaborative Research: I/UCRC on Grid-Connected Advanced Power Electronic Systems (GRAPES)
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批准号:0934390
-
项目类别:Standard Grant
-
资助金额:$56.5万
-
财政年份:2009
-
负责人:Homer Mantooth
-
依托单位:
COLLABORATIVE PROPOSAL: I/UCRC: Center for Grid-Connected Advanced Power Electronic Systems (GRAPES)
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批准号:0832538
-
项目类别:Standard Grant
-
资助金额:$1.0万
-
财政年份:2008
-
负责人:Homer Mantooth
-
依托单位:
MRI: Acquisition of Unique, High-Power Instrumentation for Future Distribution Systems Test and Evaluation
-
批准号:0723195
-
项目类别:Standard Grant
-
资助金额:$37.0万
-
财政年份:2007
-
负责人:Homer Mantooth
-
依托单位:
GOALI: Compact Modeling of Silicon Carbide (SIC) Devices for Advanced Power Switching Applications
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批准号:0424411
-
项目类别:Standard Grant
-
资助金额:$0.0万
-
财政年份:2004
-
负责人:Homer Mantooth
-
依托单位:
Modeling Silicon Carbide Devices for Power Supply Performance Evaluation
-
批准号:0115534
-
项目类别:Standard Grant
-
资助金额:$27.02万
-
财政年份:2001
-
负责人:Homer Mantooth
-
依托单位:
CRCD: Recent Developments into the Mixed-Signal/Telecommunications Curriculum
-
批准号:0088011
-
项目类别:Standard Grant
-
资助金额:$40.97万
-
财政年份:2001
-
负责人:Homer Mantooth
-
依托单位:
国内基金
海外基金
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