MsRI-EW: Mid-scale Research Infrastructure Engineering Workshop for National Silicon Carbide Fabrication Facility. To Be Held Virtually August 13-14, 2020.

MsRI-EW：国家碳化硅制造设施中型研究基础设施工程研讨会。

• 批准号: 2035356
• 负责人: Homer Mantooth
• 金额: $ 1万
• 依托单位: University of Arkansas
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2020
• 资助国家: 美国
• 起止时间: 2020-07-01 至 2020-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2035356&HistoricalAwards=false
• 关键词: MsRI; EW; Mid; scale; Research

Nontechnical:The absence of prototyping infrastructure for research into microelectronic devices based on silicon carbide (SiC) limits US research and product discovery. The absence of such infrastructure forces activity abroad, if it occurs at all, and slows progress on innovation of electronic systems. The vision is of a unique SiC research facility that will spark innovation from growth and processing of materials, to device and circuit fabrication. This infrastructure would address a key gap in the nation’s research capabilities. The conference will benefit academic researchers and students as well as collaborators from industry and national laboratories. This will be a virtual conference and so online attendance will magnify its impact. The conference will identify potential impacts and spur the design and implementation of an open access SiC fabrication facility.Technical:The purpose of this workshop is to identify the critical needs and user support for an openly-accessible silicon carbide (SiC) fabrication facility that can enhance the US research access to low-volume prototyping of the next generation of power electronics. The conference will: (i) Organize leading SiC researchers and key players to evaluate the current state and infrastructure needs of research community; (ii) Include individuals with experience in the management of mid-scale infrastructure for mentoring; (iii) Provide a platform for researchers to meet and engage in objective and constructive dialog about future directions for SiC research in materials, devices, and circuits and clearly define the needed infrastructure; (iv) Allow researchers to exchange ideas on research areas that can be addressed by the national SiC fabrication facility that surrounds the power semiconductor driven ecosystem.; (v) Assess broader impacts that this mid-scale research infrastructure can provide. The conference will identify national needs for such research infrastructure, and provide plans to close the identified gap in national needs.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

非技术：缺乏基于碳化硅（SiC）的微电子器件研究的原型基础设施限制了美国的研究和产品发现。这种基础设施的缺乏迫使海外活动（如果有的话），并减缓了电子系统创新的进展。愿景是建立一个独特的SiC研究设施，从材料的生长和加工到器件和电路制造，都将激发创新。这种基础设施将解决美国研究能力的一个关键缺口。会议将使学术研究人员和学生以及来自工业和国家实验室的合作者受益。这将是一个虚拟会议，因此在线出席将扩大其影响。会议将确定潜在的影响，并促进开放接入SiC制造设施的设计和实施。技术：本次研讨会的目的是确定对开放访问的碳化硅（SiC）制造设施的关键需求和用户支持，该设施可以增强美国对下一代电力电子产品小批量原型的研究。会议将：(i)组织领先的碳化硅研究人员和关键参与者评估研究界的现状和基础设施需求；让具有管理中等规模基础设施经验的个人担任指导；（iii）为研究人员提供一个平台，就材料、器件和电路中SiC研究的未来方向进行客观和建设性的对话，并明确定义所需的基础设施；（iv）允许研究人员就围绕功率半导体驱动生态系统的国家SiC制造设施可以解决的研究领域交换意见；评估这种中等规模的研究基础设施可以提供的更广泛的影响。这次会议将确定国家对这种研究基础设施的需求，并提供计划以缩小国家需求中已确定的差距。该奖项反映了美国国家科学基金会的法定使命，并通过使用基金会的知识价值和更广泛的影响审查标准进行评估，被认为值得支持。