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Multi-scale approach for prediction of electrical properties of carbon nanotube reinforced polymers

Multi-scale approach for prediction of electrical properties of carbon nanotube reinforced polymers
预测碳纳米管增强聚合物电性能的多尺度方法
批准号:
222251336
负责人:
Professor Dr. Thomas Frauenheim
金额:
$0.0万
依托单位国家:
德国
项目类别:
Research Grants
财政年份:
2012
资助国家:
德国
项目状态:
已结题
起止时间:
2011-12-31 至 2015-12-31

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中文摘要
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英文摘要
The project aims at development and application of a multi-scale computational approach for predictive simulations of electrical conductivity in carbon nanotube reinforced polymers (CNRP), which takes into account the charge transport mechanisms on the atomistic scale and realistic morphology and distributions of carbon nanotubes (CNTs) on the microscopic scale. On the atomic scale, charge transport in CNT/polymer/CNT junctions will be investigated under real environmental conditions. In a combination of classical molecular dynamics (MD) simulations with quantum mechanical description of the respective electronic structure quantitative charge transport data along MD-trajectories will be calculated. The charge transport data will be obtained by using coarse-grained hopping models and non-equilibrium Green´s Function (NEGF) methods. The input data concerning typical alignments and distance distributions of CNTs in realistic microstructures will be obtained in microscopic simulations and the resulting junctions will be subjected to classical atomistic MD simulations to equilibrate relevant CNT/polymer/CNT junctions for electronic structure and electrical transport analyses. On the microscopic scale, representative volume elements will be analyzed with respect to the percolation behavior by varying the mass fraction, degree of dispersion, orientation and tortuosity of CNTs. Based on the contact resistances and tunneling ranges determined at the atomic scale, electrical conductivities will be calculated for realistic microstructures employing the Finite Element Method (FEM).
期刊论文(1)
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DOI: 10.1021/acs.jpcc.6b04185
发表时间: 2016
期刊: Journal of Physical Chemistry C
影响因子: 3.7
作者: [G. Penazzi, A. Pecchia, V. Gupta, T. Frauenheim]
通讯作者: T. Frauenheim
Atomistic Design of Thermal and Electrical Transport in Materials with Dislocations: From High Power Electronics to Thermoelectrics
Defect calculations in Ga-based semiconductors using optimal hybrid functionals
Charge transport modelling in silicon ultra-scaled devices with native oxide (SINOXI)
Theoretical investigations of surface modifications and doping of semiconductor nanowire structures
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