Compact modeling and characterization of carbon nanotube field-effect transistors and analog high- frequency circuit design

碳纳米管场效应晶体管（CNTFFET）由于其高的本征迁移率和非常低的每管电容而在高速模拟器件应用中是有吸引力的技术。第一个高频装置，具有中等的布局尺寸和通道内的多个管，可能很快就会商业化。然而，为了探索碳纳米管技术在应用中的独特功能，迫切需要一个基于物理和几何可扩展的紧凑模型，以实现电路设计和性能优化。推导，实验验证，并实现这样一个可制造的CNTF的模型是本项目的主要目标。为了实现这一目标，制造先进的CNTF将广泛的实验特点（小信号和大信号）和现有的设备仿真基础设施的结果将被用作紧凑的模型开发的起点。作为先决条件，与工业合作伙伴的合作已经建立，提供从基于步进器的制造访问GHz CNTF。本项目将弥合基础研究（物理，化学）和实际应用（电气工程）之间目前存在的差距，通过开发设备建模和模拟能力，适合调查CNTF在高频模拟电路中的实际潜力。

Carbon nanotube field-effect transistors (CNTFETs) are an attractive technology for high-speed analog device applications due to their high intrinsic mobility and very low capacitance per tube. First high-frequency devices with moderate layout dimensions and multiple tubes within the channel may soon be available commercially. However, to explore the unique features of carbon nanotube technology in applications a physics-based and geometry scalable compact model is urgently needed to enable circuit design and performance optimization. Deriving, experimentally verifying, and implementing such a model for manufacturable CNTFETs is the main goal of the present project. To achieve this goal, fabricated advanced CNTFETs will be extensively characterized experimentally (both small- and large-signal) and results of an existing device simulation infrastructure will be used as a starting point for the compact model development. As prerequisite, a collaboration with an industrial partner has been established that provides access to GHz CNTFETs from a stepper-based fabrication. The present project will bridge the presently existing gap between basic research (physics, chemistry) and practical applications (electrical engineering) by developing device modeling and simulation capabilities that are suitable for investigating the actual potential of CNTFETs in high-frequency analog circuits.