Compact modeling and characterization of carbon nanotube field-effect transistors and analog high- frequency circuit design

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Carbon nanotube field-effect transistors (CNTFETs) are an attractive technology for high-speed analog device applications due to their high intrinsic mobility and very low capacitance per tube. First high-frequency devices with moderate layout dimensions and multiple tubes within the channel may soon be available commercially. However, to explore the unique features of carbon nanotube technology in applications a physics-based and geometry scalable compact model is urgently needed to enable circuit design and performance optimization. Deriving, experimentally verifying, and implementing such a model for manufacturable CNTFETs is the main goal of the present project. To achieve this goal, fabricated advanced CNTFETs will be extensively characterized experimentally (both small- and large-signal) and results of an existing device simulation infrastructure will be used as a starting point for the compact model development. As prerequisite, a collaboration with an industrial partner has been established that provides access to GHz CNTFETs from a stepper-based fabrication. The present project will bridge the presently existing gap between basic research (physics, chemistry) and practical applications (electrical engineering) by developing device modeling and simulation capabilities that are suitable for investigating the actual potential of CNTFETs in high-frequency analog circuits.