Electron Microscopy and Modeling of Resistive Switching Devices Based on TaOx

基于 TaOx 的电阻开关器件的电子显微镜和建模

• 批准号: 1905648
• 负责人: Marek Skowronski
• 金额: $ 46.03万
• 依托单位: Carnegie-Mellon University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2019
• 资助国家: 美国
• 起止时间: 2019-08-01 至 2023-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1905648&HistoricalAwards=false
• 关键词: Electron; Microscopy; Modeling; Resistive; Switching

Non-technical description: Artificial Intelligence (AI) places specific demands on the information processing and as the applications multiply, they require a dedicated hardware specifically designed for the task. Current transistor-based digital circuits are not well suited for AI and finding new materials with novel functionalities, enabling new device principles is critical to the progress in this field. This project aims to bring advanced knowledge of material properties evolution upon working (cycling) conditions for a specific type of devices, namely for switches based on tantalum oxide that can repeatedly change the electrical resistance between high and low values as the result of the applied bias. The applications of such structures include non-volatile solid state (no moving parts) memories and artificial synapses mimicking the functions of the human brain. The research emphasizes understanding of material properties and the processes controlling the resistance of such device. The parallel goal is to educate the next generation of engineers for the electronics industry workforce. The components of the plan are (i) reaching out to high school students through 'Engineering@CMU' program, (ii) involvement of undergraduates in research through Semiconductor Research Corporation - Undergraduate Research Opportunity program, and (iii) holding regular conference calls with companies such as Intel and IBM.Technical description: Resistive switching devices have been demonstrated more than a decade ago but many of the desired performance criteria have not been met. This is, in part, due to our poor understanding of the processes involved in resistance switching and, in particular, the formation and evolution of a conducting filament within highly resistive oxide layer. Resistive switches encode information by redistribution of ions both vertically between the functional oxide and the electrodes and laterally within the oxide film. The research aims to map out the ion motion in the oxide film as a function of device bias history semiconductor by recording two- and three-dimensional elemental maps by X-ray energy dispersive spectroscopy and electron and atom probe tomographies. Of particular interest is the filament evolution toward the end of device lifetime. The analysis of end-of-endurance material properties leads to identification and prediction of the device failure mechanisms. The experimental distribution maps are being simulated by the finite element model based on diffusion equations including motion of ions and transport of heat and electric charge with additional restrictions imposed by the electrical biasing circuit. The model is intended to be universal for the entire class of resistive switching devices.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

非技术描述：人工智能（AI）对信息处理提出了特定的要求，并且随着应用程序的乘积，它们需要专门为任务设计的专用硬件。当前基于晶体管的数字电路不适合AI，并找到具有新功能的新材料，启用新设备原理对于该领域的进展至关重要。该项目旨在在特定类型的设备工作（骑自行车）条件下对材料特性的进化进行高级知识，即基于基于氧化棘的氧化的开关，该开关可以反复改变由于应用偏置的结果，因此可以反复改变高值和低值之间的电阻。这种结构的应用包括非挥发性固态（无运动部位）记忆和模仿人脑功能的人工突触。研究强调对材料特性的理解和控制这种设备电阻的过程。平行目标是教育电子行业劳动力的下一代工程师。该计划的组成部分是（i）通过“工程@cmu”计划与高中生联系，（ii）通过半导体研究公司 - 本科研究机会计划参与研究，以及（iii）定期与Intel和Ibm.Technical Technical Stricement的公司进行定期呼吁：与IBMM.Technical描述：抵抗性开关设备相比，已经表现出了更多的效果，并且已经表现出了更多的表现。这部分是由于我们对电阻切换所涉及的过程的理解不足，尤其是在高度电阻氧化物层内的传导细丝的形成和演变。电阻开关通过在功能性氧化物和电极之间以及氧化物膜内的横向上的离子重新分布来编码信息。该研究的目的是通过X射线能量分散光谱和电子以及原子探针层表记录二维元素图，以记录二维和三维元素图，将氧化物膜中的离子运动绘制为设备偏置历史记录半导体的函数。特别值得关注的是设备寿命结束时的细丝演变。赋入材料终止材料的分析导致对设备故障机制的识别和预测。基于扩散方程，包括离子运动以及热和电荷的运输以及电气偏置电路施加的额外限制，通过有限元模型模拟实验分布图。该模型旨在在整个电阻开关设备上是普遍的。该奖项反映了NSF的法定任务，并使用基金会的知识分子优点和更广泛的影响评估标准，被认为值得通过评估来获得支持。

项目成果

Modeling of the thermodiffusion-induced filament formation in TiN/TaOx/TiN resistive switching devices

TiN/TaOx/TiN 电阻开关器件中热扩散引起的细丝形成的建模

• 发表时间: 2022
• 期刊: Physical review applied
• 影响因子: 4.6
• 作者: Meng, J.;Lian, E. K;Poplawsky, J. D.;Skowronski, M.
• 通讯作者: Skowronski, M.

Electrical and Thermal Dynamics of Self-Oscillations in TaO x -Based Threshold Switching Devices

TaO x 阈值开关器件中自振荡的电动力学和热动力学

• DOI: 10.1021/acsaelm.9b00782
• 发表时间: 2020
• 期刊: ACS Applied Electronic Materials
• 影响因子: 4.7
• 作者: Yu, Yiqi;Zhao, Bingyuan;Goodwill, Jonathan M.;Ma, Yuanzhi;Bain, James A.;Skowronski, Marek
• 通讯作者: Skowronski, Marek

Temperature overshoot as the cause of physical changes in resistive switching devices during electro-formation

• DOI: 10.1063/5.0010882
• 发表时间: 2020-04
• 期刊: arXiv: Applied Physics
• 作者: Jing-Hui Meng;Bin Zhao;Qiyun Xu;Jonathan M. Goodwill;J. Bain;M. Skowronski