Electron Microscopy and Modeling of Resistive Switching Devices Based on TaOx

基于 TaOx 的电阻开关器件的电子显微镜和建模

• 批准号: 1905648
• 负责人: Marek Skowronski
• 金额: $ 46.03万
• 依托单位: Carnegie-Mellon University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2019
• 资助国家: 美国
• 起止时间: 2019-08-01 至 2023-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1905648&HistoricalAwards=false
• 关键词: Electron; Microscopy; Modeling; Resistive; Switching

Non-technical description: Artificial Intelligence (AI) places specific demands on the information processing and as the applications multiply, they require a dedicated hardware specifically designed for the task. Current transistor-based digital circuits are not well suited for AI and finding new materials with novel functionalities, enabling new device principles is critical to the progress in this field. This project aims to bring advanced knowledge of material properties evolution upon working (cycling) conditions for a specific type of devices, namely for switches based on tantalum oxide that can repeatedly change the electrical resistance between high and low values as the result of the applied bias. The applications of such structures include non-volatile solid state (no moving parts) memories and artificial synapses mimicking the functions of the human brain. The research emphasizes understanding of material properties and the processes controlling the resistance of such device. The parallel goal is to educate the next generation of engineers for the electronics industry workforce. The components of the plan are (i) reaching out to high school students through 'Engineering@CMU' program, (ii) involvement of undergraduates in research through Semiconductor Research Corporation - Undergraduate Research Opportunity program, and (iii) holding regular conference calls with companies such as Intel and IBM.Technical description: Resistive switching devices have been demonstrated more than a decade ago but many of the desired performance criteria have not been met. This is, in part, due to our poor understanding of the processes involved in resistance switching and, in particular, the formation and evolution of a conducting filament within highly resistive oxide layer. Resistive switches encode information by redistribution of ions both vertically between the functional oxide and the electrodes and laterally within the oxide film. The research aims to map out the ion motion in the oxide film as a function of device bias history semiconductor by recording two- and three-dimensional elemental maps by X-ray energy dispersive spectroscopy and electron and atom probe tomographies. Of particular interest is the filament evolution toward the end of device lifetime. The analysis of end-of-endurance material properties leads to identification and prediction of the device failure mechanisms. The experimental distribution maps are being simulated by the finite element model based on diffusion equations including motion of ions and transport of heat and electric charge with additional restrictions imposed by the electrical biasing circuit. The model is intended to be universal for the entire class of resistive switching devices.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

非技术性说明：人工智能（AI）对信息处理提出了特定的要求，随着应用程序的增加，它们需要专门为任务设计的专用硬件。目前基于晶体管的数字电路并不适合人工智能，寻找具有新功能的新材料，实现新的器件原理对该领域的进展至关重要。该项目旨在为特定类型的设备带来工作（循环）条件下材料性能演变的先进知识，即基于氧化钽的开关，该开关可以由于施加的偏压而在高值和低值之间反复改变电阻。这种结构的应用包括非易失性固态（无移动部件）存储器和模仿人脑功能的人工突触。该研究强调对材料特性和控制这种器件的电阻的过程的理解。并行的目标是为电子行业的劳动力培养下一代工程师。该计划的组成部分是（i）通过“Engineering@CMU”计划接触高中生，（ii）通过半导体研究公司-本科生研究机会计划让本科生参与研究，以及（iii）与英特尔和IBM等公司定期举行电话会议。技术说明：电阻开关器件在十多年前就已经被证明，但许多期望的性能标准还没有得到满足。这在一定程度上是由于我们对电阻切换过程的理解不足，特别是对高阻氧化层内导电细丝的形成和演变的理解不足。电阻开关通过在功能氧化物和电极之间垂直地以及在氧化物膜内横向地重新分布离子来编码信息。该研究的目的是绘制出的离子运动的氧化膜作为一个功能的设备偏置历史半导体通过记录二维和三维元素图的X射线能量色散谱和电子和原子探针断层扫描。特别令人感兴趣的是细丝在器件寿命结束时的演变。疲劳极限材料性能的分析导致识别和预测器械失效机制。实验分布图是通过基于扩散方程的有限元模型来模拟的，该扩散方程包括离子的运动以及热和电荷的传输，其中附加的限制由电偏置电路施加。该奖项反映了NSF的法定使命，并通过使用基金会的知识价值和更广泛的影响审查标准进行评估，被认为值得支持。

项目成果

Modeling of the thermodiffusion-induced filament formation in TiN/TaOx/TiN resistive switching devices

TiN/TaOx/TiN 电阻开关器件中热扩散引起的细丝形成的建模

• 发表时间: 2022
• 期刊: Physical review applied
• 影响因子: 4.6
• 作者: Meng, J.;Lian, E. K;Poplawsky, J. D.;Skowronski, M.
• 通讯作者: Skowronski, M.

Electrical and Thermal Dynamics of Self-Oscillations in TaO x -Based Threshold Switching Devices

TaO x 阈值开关器件中自振荡的电动力学和热动力学

• DOI: 10.1021/acsaelm.9b00782
• 发表时间: 2020
• 期刊: ACS Applied Electronic Materials
• 影响因子: 4.7
• 作者: Yu, Yiqi;Zhao, Bingyuan;Goodwill, Jonathan M.;Ma, Yuanzhi;Bain, James A.;Skowronski, Marek
• 通讯作者: Skowronski, Marek

Temperature overshoot as the cause of physical changes in resistive switching devices during electro-formation

• DOI: 10.1063/5.0010882
• 发表时间: 2020-04
• 期刊: arXiv: Applied Physics
• 作者: Jing-Hui Meng;Bin Zhao;Qiyun Xu;Jonathan M. Goodwill;J. Bain;M. Skowronski