Atomic Structure of Oxygen Induced Defects in Aluminum Gallium Arsenide Epilayers

铝砷化镓外延层氧致缺陷的原子结构

• 批准号: 9024401
• 负责人: Marek Skowronski
• 金额: $ 4万
• 依托单位: Carnegie-Mellon University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1991
• 资助国家: 美国
• 起止时间: 1991-09-01 至 1993-02-28
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9024401&HistoricalAwards=false
• 关键词: Atomic; Structure; Oxygen; Induced; Defects

This project addresses fundamental processes and atomic level details of oxygen induced defects in compound semiconductors such as aluminum gallium arsenide (AlGaAs). Epitaxial crystal growth by MOCVD with unique introduction and control of oxygen content by aluminum alkoxides, characterization of the epitaxial layers by optical, electrical, and ion channelling chemical reactions, and assessment of the thermal stability of GaAs:AlO epilayers are included in the research. The information gained from these studies is expected to provide new scientific understanding and is relevant to semiconductor materials of significant technological importance; AlGaAs and GaAs epitaxial layers are used in heterojunction devices such as solid state lasers and transistors.

该项目研究了砷化铝镓 (AlGaAs) 等化合物半导体中氧引起的缺陷的基本过程和原子级细节。 研究内容包括通过 MOCVD 进行外延晶体生长，通过铝醇盐独特地引入和控制氧含量，通过光学、电学和离子通道化学反应表征外延层，以及评估 GaAs:Al2O3 外延层的热稳定性。 从这些研究中获得的信息预计将提供新的科学理解，并且与具有重大技术重要性的半导体材料相关； AlGaAs 和 GaAs 外延层用于异质结器件，例如固态激光器和晶体管。