Atomic Structure of Oxygen Induced Defects in Aluminum Gallium Arsenide Epilayers

该项目涉及基本过程和原子水平 化合物半导体中的氧诱导缺陷的细节 砷化铝镓（AlGaAs）。 外延晶体生长 MOCVD具有独特的引入和控制氧含量， 铝醇盐外延层的表征 光学、电学和离子通道化学反应，以及 评估的GaAs：AlO外延层的热稳定性是 包括在研究中。 从这些获得的信息 研究有望提供新的科学认识， 与具有重要技术意义的半导体材料相关 重要性; AlGaAs和GaAs外延层用于 异质结器件，例如固态激光器和晶体管。

This project addresses fundamental processes and atomic level details of oxygen induced defects in compound semiconductors such as aluminum gallium arsenide (AlGaAs). Epitaxial crystal growth by MOCVD with unique introduction and control of oxygen content by aluminum alkoxides, characterization of the epitaxial layers by optical, electrical, and ion channelling chemical reactions, and assessment of the thermal stability of GaAs:AlO epilayers are included in the research. The information gained from these studies is expected to provide new scientific understanding and is relevant to semiconductor materials of significant technological importance; AlGaAs and GaAs epitaxial layers are used in heterojunction devices such as solid state lasers and transistors.