Atomic Structure of Oxygen Induced Defects in Aluminum Gallium Arsenide Epilayers

该项目解决了化合物半导体如砷化铝镓（AlGaAs）中氧诱导缺陷的基本过程和原子水平细节。本文的研究内容包括利用MOCVD法生长外延晶体，通过铝烷氧化物的独特引入和控制氧含量，通过光学、电学和离子通道化学反应表征外延层，以及评估GaAs:AlO外延层的热稳定性。从这些研究中获得的信息有望提供新的科学理解，并与具有重要技术意义的半导体材料相关；AlGaAs和GaAs外延层用于异质结器件，如固态激光器和晶体管。

This project addresses fundamental processes and atomic level details of oxygen induced defects in compound semiconductors such as aluminum gallium arsenide (AlGaAs). Epitaxial crystal growth by MOCVD with unique introduction and control of oxygen content by aluminum alkoxides, characterization of the epitaxial layers by optical, electrical, and ion channelling chemical reactions, and assessment of the thermal stability of GaAs:AlO epilayers are included in the research. The information gained from these studies is expected to provide new scientific understanding and is relevant to semiconductor materials of significant technological importance; AlGaAs and GaAs epitaxial layers are used in heterojunction devices such as solid state lasers and transistors.