Atomic Structure of Oxygen Induced Defects in Aluminum Gallium Arsenide Epilayers

该项目研究化合物半导体中氧诱导缺陷的基本工艺和原子水平细节，如铝镓砷化物(AlGaAs)。这项研究包括独特的铝醇盐引入和控制氧含量的MOCVD外延晶体生长，通过光、电和离子沟道化学反应对外延层的表征，以及对GaAs：AlO外延层热稳定性的评估。从这些研究中获得的信息预计将提供新的科学理解，并与具有重大技术重要性的半导体材料有关；AlGaAs和GaAs外延层用于固体激光器和晶体管等异质结器件。

This project addresses fundamental processes and atomic level details of oxygen induced defects in compound semiconductors such as aluminum gallium arsenide (AlGaAs). Epitaxial crystal growth by MOCVD with unique introduction and control of oxygen content by aluminum alkoxides, characterization of the epitaxial layers by optical, electrical, and ion channelling chemical reactions, and assessment of the thermal stability of GaAs:AlO epilayers are included in the research. The information gained from these studies is expected to provide new scientific understanding and is relevant to semiconductor materials of significant technological importance; AlGaAs and GaAs epitaxial layers are used in heterojunction devices such as solid state lasers and transistors.