Thermal mapping of current density in filamentary switching devices

丝状开关器件中电流密度的热图

• 批准号: 2208488
• 负责人: Marek Skowronski
• 金额: $ 47.56万
• 依托单位: Carnegie-Mellon University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2022
• 资助国家: 美国
• 起止时间: 2022-07-01 至 2025-06-30
• 项目状态: 未结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2208488&HistoricalAwards=false
• 关键词: Thermal; mapping; current; density; filamentary

Nontechnical description: Storing the information in semiconductor memory devices and transferring it to and from the processing unit are the two major roadblocks in continued increase of information processing speed and efficiency. One of the most promising ways to address these roadblocks is to employ memristors i.e., resistors with memory. It is generally agreed that resistance change is caused by redistribution of ions in the device material. This project is focused on answering fundamental questions concerning the driving forces of ion motion, the speed of motion, and the temperature necessary for it. A secondary goal of the project is the development of experimental technique to measure the temperature distribution in nanoscale devices under bias. The project provides opportunities for training of undergraduate and graduate students in areas of processing of thin films and electronic devices and contributes to education of the workforce in an important area of the national economy. Outreach activities target high school students to encourage them to pursue careers in semiconductor technology.Technical description:The project targets identification of the operating mechanisms in two types of resistive switching structures: threshold and memory switches. Both device types form a small diameter conducting filament that is either volatile or non-volatile. Two models have been proposed for formation of the filament in resistive switches (i) based on lateral motion induced by thermophoresis and (ii) vertical motion and exchange of oxygen ions with the anode. The proposed mechanisms for threshold switches include carrier injection, local heating of the material, creating of hot carriers, and nucleation of a secondary metallic phase. The Carnegie Mellon team is going to use Scanning Thermal Microscopy and Scanning Joule Expansion Microscopy to measure the temperature distribution in structures with applied voltage, extract the filament size, and its changes with biasing conditions and map the local changes of composition by High Angle Annular Dark Field and X-Ray Energy Dispersive Spectroscopy. Since the temperature distribution is the distinguishing characteristics of different models, the results will identify the operating mechanism. The final goal of the project is building a predictive and quantitative model of processes involved the resistance change. Results are expected to form fundamental underpinnings of the important new electronic device technology that potentially can revolutionize the field of non-volatile high-density memories.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

非技术描述：将信息存储在半导体内存设备中并从处理单元转移，这是信息处理速度和效率的持续提高，这是两个主要的障碍。解决这些障碍的最有前途的方法之一是雇用回忆录，即有记忆力的电阻。人们普遍认为，电阻变化是由设备材料中离子的重新分布引起的。该项目的重点是回答有关离子运动驱动力，运动速度以及其必要的温度的基本问题。该项目的次要目标是开发实验技术，以测量偏置下纳米级设备的温度分布。该项目为在薄膜和电子设备的处理领域培训本科生和研究生提供了机会，并为国民经济重要领域的劳动力教育做出了贡献。外展活动针对高中生鼓励他们从事半导体技术的职业。技术描述：该项目的目标是确定两种类型的电阻开关结构中的操作机制：阈值和内存开关。两种设备类型都形成了挥发性或非易失性的小直径传导丝。已经提出了两种模型，以基于嗜热诱导的侧向运动以及（ii）垂直运动和氧离子与阳极的垂直运动和交换。阈值开关提出的机制包括载体注入，材料的局部加热，创建热载体以及二次金属相的成核。卡内基·梅隆（Carnegie Mellon）团队将使用扫描热显微镜和扫描焦耳膨胀显微镜，以测量具有施加电压的结构中的温度分布，提取灯丝尺寸以及与偏置条件的变化，并绘制局部组成的变化，并通过高角度环形深度深色磁场和X射线射线分散分散光谱传感器。由于温度分布是不同模型的区别特征，因此结果将确定工作机制。该项目的最终目标是建立一个涉及阻力变化的过程的预测和定量模型。预计结果有可能形成重要的新电子设备技术的基本基础，该基础可能会彻底改变非挥发性高密度记忆的领域。该奖项反映了NSF的法定任务，并被认为是值得通过基金会的知识分子优点和更广泛影响的审查标准通过评估来进行评估的。