Dopant Distribution, Motion, and Electrochemical Transfer in Resistive Switching Heterostructures

电阻开关异质结构中的掺杂剂分布、运动和电化学转移

• 批准号: 1105291
• 负责人: Marek Skowronski
• 金额: $ 44.77万
• 依托单位: Carnegie-Mellon University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2011
• 资助国家: 美国
• 起止时间: 2011-06-01 至 2014-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1105291&HistoricalAwards=false
• 关键词: Dopant; Distribution; Motion; Electrochemical; Transfer

Technical: Resistive switching in oxide-based heterostructures (metal-oxide-metal) has been known since the 1960's and has experienced a recent (since 2000) explosion of commercial and scientific interest, particularly for nonvolatile resistance-change random access memories.Resistive switching can be defined as the process in which a material or heterostructure is able to reversibly change (under electrical stimulation) between at least two resistance values that are stable with time. Most of the competing mechanisms proposed to explain resistive switching are qualitative and have only indirect observational support. However, they nearly all involve the redistribution of dopants in the oxide layer through ion motion. The project will interrogate in a quantitative fashion the electrical potential and oxygen distribution in metal-oxide-metal heterostructures, to quantify the oxygen motion within the oxide and across the metal-oxide interface, and develop a predictive computational model that captures the kinetic aspects of the switching process in three dimensions. The integrated research and education program described aims to understand, design, and produce nanoscale resistive switches appropriate for data storage and logic devices. Testing of the hypotheses that uniform ion redistribution within a heterostructure can be quantitatively characterized and ultimately optimized for resistive switching will be studied. To do so the research will determine the distribution of oxygen near, measure the oxygen exchange rates across, and quantify the electrical potential near metal-oxide junctions and oxide heterojunctions, designed and fabricated at Carnegie Mellon. A variety of characterization methods, including secondary ion mass spectroscopy, electron holography, scanning Kelvin probe microscopy, scanning electrochemical microscopy, capacitance-based methods, and spatially resolved secondary ion mass spectroscopy to interrogate ion redistribution and transfer will be used. A multi-dimensional continuum level computational model will be developed that describes the electrochemical transfer and ion redistribution in the resistive switch, which will be verified by testing of nanoscale resistive switching metal-oxide-metal devices, appropriate for future applications.Non-Technical: This project will have a broad societal impact by providing the fundamental underpinnings to device design and performance in novel ultra-high density data storage devices and reconfigurable logic technologies. The research activities will impact the education of a diverse group of Ph.D. and Undergraduate students through: laboratory and computational research, an advanced elective course, and a sophomore-level laboratory module. The new elective course, entitled 'Defect Interactions: Enabling Advanced Functional Materials and Devices,' will provide concrete examples of how defect interactions (such point defect motion near / across interfaces in memristors) act as enablers in advanced devices, including resistive switches, batteries, fuel cells, and high power electronics. A laboratory module will be implemented in the sophomore level core materials science course 'Defects in Materials.' It will demonstrate to students how point defects behave in electrochemical materials. Finally, the PIs will organize a research symposium on resistive switching at an international research conference.

技术：自1960年代以来就已经知道了基于氧化物的异质结构（金属氧化金属）的电阻转换，并且经历了最近（自2000年以来）爆炸（自2000年以来）爆炸（自2000年以来）爆炸，尤其是对于非挥发性随机访问记忆的非挥发性随机访问记忆。抗拒性切换可以定义为在材料或近亲构造的过程中的两种刺激性变化（在概述的过程中都可以稳定下降，而均可又可以稳定地变化。 时间。 提议解释电阻转换的大多数竞争机制都是定性的，并且仅具有间接的观察支持。但是，它们几乎全部涉及通过离子运动在氧化物层中掺杂剂的重新分布。该项目将以定量的方式询问金属 - 氧化金属异质结构中的电势和氧分布，以量化氧化物内部和金属氧化物界面内的氧运动，并开发出一个预测计算模型，以捕获三个维度中开关过程的动力学方面。 描述的综合研究和教育计划旨在了解适合数据存储和逻辑设备的纳米级电阻开关。可以定量表征异质结构内均匀离子重新分布的假设的测试，并最终研究用于电阻转换。为此，研究将确定氧气附近的分布，测量跨越金属氧化物连接的电势，并在卡内基梅隆设计和制造。各种表征方法，包括次级离子质谱，电子全息图，扫描开尔文探针显微镜，扫描电化学显微镜，基于电容的方法以及空间分辨的次级离子质量光谱将使用质量分配和转移。将开发一个多维连续级计算模型，描述电阻开关中的电化学转移和离子再分配，通过测试纳米级电阻转换金属 - 氧化物 - 氧化物 - 氧化物 - 氧化物 - 氧化物 - 适用于未来的应用，该项目将通过为NON-SECHICTICS提供广泛的启动，以实现基础性的数据，并在范围内进行了验证，该项目将具有广泛的确定性，并具有良好的效果。设备和可重新配置的逻辑技术。研究活动将影响多元化博士学位的教育。以及本科生通过：实验室和计算研究，高级选修课程和大二实验室模块。新的选修课，标题为“缺陷相互作用：启用高级功能材料和设备”，将提供具体的例子，说明缺陷相互作用（此类缺陷运动在MEMRISTORS中的接近 /跨界面）如何充当高级设备，包括电阻开关，电池，燃料电池和高电力电气的促进器。将在大二一级的核心材料科学课程“材料缺陷”中实施实验室模块。它将向学生展示点缺陷如何在电化学材料中表现出来。最后，PI将在国际研究会议上组织一项有关电阻转换的研究研讨会。