Molecular Doping of Semiconductors: Lanthanide-impurity Complexes for Light Emitting Diodes

半导体的分子掺杂：用于发光二极管的镧系元素杂质配合物

• 批准号: 9202683
• 负责人: Marek Skowronski
• 金额: $ 21.75万
• 依托单位: Carnegie-Mellon University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1992
• 资助国家: 美国
• 起止时间: 1992-09-01 至 1997-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9202683&HistoricalAwards=false
• 关键词: Molecular; Doping; Semiconductors; Lanthanide; impurity

A fundamental study to address the feasibility of rare earth doping of semiconductors(III-V, Silicon, and SiGe) for light emitting devices will be conducted. The approach is to introduce erbium in the form of moleclules of erbium and another impurtiy(oxygen or nitrogen). This will be achieved by control of growth chemistry and use of novel precursors, which are designed to decompose in sucha a way as to form Er-O and Er-N radicals on the growth surface and be incorporated in this form into the layer. Capture of carriers by the impurity part of a dopant molecule followed by energy transfer to erbium is expected to provide an efficent excitation route of intra-4f shell luminescence. %%% This research will investigate a new method for obtaining light emission from semiconductors. Potential benefits include the ability to provide novel devices and optical interconnects in high performance electronic and photonic devices and integrated circuits used in computing, information processing, and telecommunications.

将进行一项基础性研究，以解决发光器件中稀土掺杂半导体(III-V、硅和SiGe)的可行性。方法是以铒分子和另一种杂质(氧或氮)的形式引入铒。这将通过控制生长化学和使用新型前驱体来实现，这些前驱体被设计成以这种方式分解，以便在生长表面形成Er-O和Er-N自由基，并以这种形式并入到层中。通过掺杂分子的杂质部分捕获载流子，然后将能量转移到Er，有望为4f壳层内发光提供一条有效的激发途径。这项研究将探索一种从半导体获得光发射的新方法。潜在的好处包括能够在高性能电子和光子设备以及用于计算、信息处理和电信的集成电路中提供新型设备和光学互连。