Molecular Doping of Semiconductors: Lanthanide-impurity Complexes for Light Emitting Diodes

半导体的分子掺杂：用于发光二极管的镧系元素杂质配合物

• 批准号: 9202683
• 负责人: Marek Skowronski
• 金额: $ 21.75万
• 依托单位: Carnegie-Mellon University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1992
• 资助国家: 美国
• 起止时间: 1992-09-01 至 1997-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9202683&HistoricalAwards=false
• 关键词: Molecular; Doping; Semiconductors; Lanthanide; impurity

A fundamental study to address the feasibility of rare earth doping of semiconductors(III-V, Silicon, and SiGe) for light emitting devices will be conducted. The approach is to introduce erbium in the form of moleclules of erbium and another impurtiy(oxygen or nitrogen). This will be achieved by control of growth chemistry and use of novel precursors, which are designed to decompose in sucha a way as to form Er-O and Er-N radicals on the growth surface and be incorporated in this form into the layer. Capture of carriers by the impurity part of a dopant molecule followed by energy transfer to erbium is expected to provide an efficent excitation route of intra-4f shell luminescence. %%% This research will investigate a new method for obtaining light emission from semiconductors. Potential benefits include the ability to provide novel devices and optical interconnects in high performance electronic and photonic devices and integrated circuits used in computing, information processing, and telecommunications.

将进行一项针对半导体（III-V，硅和SIGE）稀土掺杂用于发光装置的可行性的基本研究。 该方法是以Erbium分子和另一个杂质（氧或氮）的形式引入Erbium。 这将通过控制生长化学和使用新的前体的使用来实现，这些新的前体的使用旨在以这种方式分解生长表面上的ER-O和ER-N自由基，并将这种形式纳入层。 通过掺杂剂分子的杂质部分捕获载体，然后能量转移到Erbium将提供有效的激发途径，即4F内壳发光。 %%％这项研究将研究一种从半导体中获得光发射的新方法。 潜在的好处包括能够在高性能电子和光子设备以及用于计算，信息处理和电信中使用的集成电路中提供新型设备和光学互连。