Molecular Doping of Semiconductors: Lanthanide-impurity Complexes for Light Emitting Diodes

对稀土掺杂的可行性进行了基础性研究， 用于发光器件的半导体（III-V族、硅和SiGe）将 进行。 该方法是以如下形式引入铒： 铒和其他杂质（氧或氮）的分子。 这 将通过控制生长化学和使用新的 前体，其被设计为以苏查的方式分解， Er-O和Er-N自由基的生长表面上，并被纳入这一 形成层。 杂质部分对载流子的俘获 预期掺杂剂分子随后能量转移到铒， 提供了一种有效的4F壳层内发光的激发途径。 %%% 本研究将探讨一种新的方法来获得光发射 从半导体。 潜在的好处包括能够提供 高性能电子器件中的新型器件和光学互连 以及用于计算的光子器件和集成电路， 信息处理和电信。

A fundamental study to address the feasibility of rare earth doping of semiconductors(III-V, Silicon, and SiGe) for light emitting devices will be conducted. The approach is to introduce erbium in the form of moleclules of erbium and another impurtiy(oxygen or nitrogen). This will be achieved by control of growth chemistry and use of novel precursors, which are designed to decompose in sucha a way as to form Er-O and Er-N radicals on the growth surface and be incorporated in this form into the layer. Capture of carriers by the impurity part of a dopant molecule followed by energy transfer to erbium is expected to provide an efficent excitation route of intra-4f shell luminescence. %%% This research will investigate a new method for obtaining light emission from semiconductors. Potential benefits include the ability to provide novel devices and optical interconnects in high performance electronic and photonic devices and integrated circuits used in computing, information processing, and telecommunications.