GOALI: Compact Modeling of Silicon Carbide (SIC) Devices for Advanced Power Switching Applications

GOALI：用于高级电源开关应用的碳化硅 (SIC) 器件的紧凑建模

• 批准号: 0424411
• 负责人: Homer Mantooth
• 金额: --
• 依托单位: University of Arkansas
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2004
• 资助国家: 美国
• 起止时间: 2004-09-01 至 2008-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0424411&HistoricalAwards=false
• 关键词: GOALI; Compact; Modeling; Silicon; Carbide

This project will concentrate on compact circuit simulation models for silicon carbide (SiC) devices that will be released for commercialization in the near future. Namely, static-induction-transistor (SIT), JFET, BJT and IGBT devices will be investigated. Specifically, the project objectives are to: (1) Characterize SiC SIT, JFET, BJT, and IGBT power switches, (2) Design & develop models for the SIT, JFET, BJT, and IGBT, (3) Validate versus measurements the SiC power device models, and (4) Validate SiC power device models by demonstration in key power electronics applications.Power electronic designers need compact models because they rely on computer simulation for insight into the details of the operation of their circuits. The designer analyzes the robustness of designs through a number of model-based studies such as dynamic thermal analysis, worst-case analysis, and statistical variability in circuit performance due to manufacturing tolerances. The original NSF GOALI on this topic has already created significant impact within the power electronics and modeling communities, as well as providing for solid foundations for partnerships. During the duration of the original project, the SiC devices we have modeled have already begun to appear on the commercial market. Nine combined semesters of co-ops and internships for students have been realized, including students working at NIST and NASA-Glenn. A total of six undergraduates and seven students from underrepresented groups participated in research projects. This proposal seeks to continue the significant achievements accomplished by the original award. Collaborators at Northrop Grumman, NIST, NASA-Glenn, the Army Research Labs, and Caracal will provide access to SiC devices, facilities, personnel expertise, and summer employment to the UA researchers throughout the duration of the renewed project.The broader impacts of this NSF GOALI proposal include: (1) Developing state-of-the-art science in the field of silicon carbide power electronics, (2) Providing research opportunities for underrepresented and minority students, and (3) Disseminating into the public domain advanced power device models for circuit designers.

该项目将专注于碳化硅（SiC）器件的紧凑电路仿真模型，该模型将在不久的将来发布用于商业化。也就是说，静感晶体管（SIT）， JFET， BJT和IGBT器件将被研究。具体来说，该项目的目标是：(1)表征SiC SIT、JFET、BJT和IGBT功率开关；(2)设计和开发SIT、JFET、BJT和IGBT的模型；(3)验证与测量SiC功率器件模型；(4)通过在关键电力电子应用中的演示来验证SiC功率器件模型。电力电子设计人员需要紧凑的模型，因为他们依靠计算机模拟来深入了解电路的操作细节。设计人员通过许多基于模型的研究来分析设计的稳健性，例如动态热分析、最坏情况分析和由于制造公差导致的电路性能的统计变异性。NSF关于该主题的最初目标已经在电力电子和建模社区中产生了重大影响，并为合作伙伴关系提供了坚实的基础。在原始项目期间，我们建模的SiC器件已经开始出现在商业市场上。已经为学生实现了9个学期的合作和实习，包括在NIST和NASA-Glenn工作的学生。共有6名本科生和7名来自代表性不足群体的学生参与了研究项目。这一提议旨在延续原奖项所取得的重大成就。诺斯罗普·格鲁曼公司、NIST、NASA-Glenn、陆军研究实验室和Caracal的合作伙伴将在整个续签项目期间为UA研究人员提供SiC设备、设施、人员专业知识和夏季就业机会。这项NSF GOALI提案的广泛影响包括：(1)发展碳化硅电力电子领域的最新科学，(2)为代表性不足和少数民族的学生提供研究机会，(3)向公共领域传播先进的功率器件模型，供电路设计师使用。