GOALI: Compact Modeling of Silicon Carbide (SIC) Devices for Advanced Power Switching Applications

该项目将专注于碳化硅 (SiC) 器件的紧凑电路仿真模型，该模型将在不久的将来发布商业化。即，将研究静态感应晶体管（SIT）、JFET、BJT 和 IGBT 器件。具体来说，该项目的目标是：(1) 表征 SiC SIT、JFET、BJT 和 IGBT 功率开关，(2) 设计和开发 SIT、JFET、BJT 和 IGBT 模型，(3) 验证 SiC 功率器件模型与测量结果，以及 (4) 通过在关键电力电子应用中进行演示来验证 SiC 功率器件模型。电力电子设计人员需要紧凑的模型，因为他们依靠计算机仿真来深入了解其电路的操作细节。设计人员通过许多基于模型的研究来分析设计的稳健性，例如动态热分析、最坏情况分析以及由于制造公差而导致的电路性能的统计变异性。关于该主题的最初 NSF GOALI 已经在电力电子和建模社区中产生了重大影响，并为合作伙伴关系奠定了坚实的基础。在原始项目期间，我们建模的 SiC 器件已经开始出现在商业市场上。已经为学生实现了九个学期的合作和实习，其中包括在 NIST 和 NASA-Glenn 工作的学生。共有六名本科生和七名来自弱势群体的学生参与了研究项目。 该提案旨在延续原奖项所取得的重大成就。诺斯罗普·格鲁曼公司、NIST、NASA-Glenn、陆军研究实验室和 Caracal 的合作者将在整个更新项目期间为 UA 研究人员提供 SiC 设备、设施、人员专业知识和暑期就业机会。 NSF GOALI 提案的更广泛影响包括：(1) 开发碳化硅电力电子领域的最先进科学，(2) 为代表性不足的学生和少数族裔学生提供研究机会，以及 (3) 传播为电路设计人员提供公共领域的先进功率器件模型。

This project will concentrate on compact circuit simulation models for silicon carbide (SiC) devices that will be released for commercialization in the near future. Namely, static-induction-transistor (SIT), JFET, BJT and IGBT devices will be investigated. Specifically, the project objectives are to: (1) Characterize SiC SIT, JFET, BJT, and IGBT power switches, (2) Design & develop models for the SIT, JFET, BJT, and IGBT, (3) Validate versus measurements the SiC power device models, and (4) Validate SiC power device models by demonstration in key power electronics applications.Power electronic designers need compact models because they rely on computer simulation for insight into the details of the operation of their circuits. The designer analyzes the robustness of designs through a number of model-based studies such as dynamic thermal analysis, worst-case analysis, and statistical variability in circuit performance due to manufacturing tolerances. The original NSF GOALI on this topic has already created significant impact within the power electronics and modeling communities, as well as providing for solid foundations for partnerships. During the duration of the original project, the SiC devices we have modeled have already begun to appear on the commercial market. Nine combined semesters of co-ops and internships for students have been realized, including students working at NIST and NASA-Glenn. A total of six undergraduates and seven students from underrepresented groups participated in research projects. This proposal seeks to continue the significant achievements accomplished by the original award. Collaborators at Northrop Grumman, NIST, NASA-Glenn, the Army Research Labs, and Caracal will provide access to SiC devices, facilities, personnel expertise, and summer employment to the UA researchers throughout the duration of the renewed project.The broader impacts of this NSF GOALI proposal include: (1) Developing state-of-the-art science in the field of silicon carbide power electronics, (2) Providing research opportunities for underrepresented and minority students, and (3) Disseminating into the public domain advanced power device models for circuit designers.