GOALI: Compact Modeling of Silicon Carbide (SIC) Devices for Advanced Power Switching Applications

该项目将专注于碳化硅(SIC)器件的紧凑型电路仿真模型，该模型将在不久的将来发布用于商业化。也就是说，将研究静电感应晶体管(SIT)、JFET、BJT和IGBT器件。具体来说，该项目的目标是：(1)确定SIT、JFET、BJT和IGBT功率开关的特性；(2)设计和开发SIT、JFET、BJT和IGBT的模型；(3)根据测量结果验证SIC功率器件模型；以及(4)通过在关键电力电子应用中的演示来验证SIC功率器件模型。电力电子设计人员需要紧凑的模型，因为他们依赖计算机模拟来深入了解其电路运行的细节。设计者通过大量基于模型的研究来分析设计的稳健性，例如动态热分析、最坏情况分析以及由于制造公差而导致的电路性能的统计可变性。美国国家科学基金会关于这一主题的最初目标已经在电力电子和模型界产生了重大影响，并为伙伴关系奠定了坚实的基础。在最初的项目期间，我们所建模的SIC设备已经开始在商业市场上出现。已经为学生实现了九个联合学期的合作和实习，包括在NIST和NASA-Glenn工作的学生。共有6名本科生和7名来自代表性不足群体的学生参加了研究项目。这项提议旨在延续原奖项所取得的重大成就。诺斯罗普·格鲁曼、NIST、NASA-Glenn、陆军研究实验室和Caracal的合作伙伴将在整个更新项目期间为UA研究人员提供SIC设备、设施、人员专业知识和暑期工作。NSF这项目标提案的更广泛影响包括：(1)发展碳化硅电力电子领域的尖端科学，(2)为未被充分代表的学生和少数族裔学生提供研究机会，以及(3)向电路设计师传播先进的功率设备模型。

This project will concentrate on compact circuit simulation models for silicon carbide (SiC) devices that will be released for commercialization in the near future. Namely, static-induction-transistor (SIT), JFET, BJT and IGBT devices will be investigated. Specifically, the project objectives are to: (1) Characterize SiC SIT, JFET, BJT, and IGBT power switches, (2) Design & develop models for the SIT, JFET, BJT, and IGBT, (3) Validate versus measurements the SiC power device models, and (4) Validate SiC power device models by demonstration in key power electronics applications.Power electronic designers need compact models because they rely on computer simulation for insight into the details of the operation of their circuits. The designer analyzes the robustness of designs through a number of model-based studies such as dynamic thermal analysis, worst-case analysis, and statistical variability in circuit performance due to manufacturing tolerances. The original NSF GOALI on this topic has already created significant impact within the power electronics and modeling communities, as well as providing for solid foundations for partnerships. During the duration of the original project, the SiC devices we have modeled have already begun to appear on the commercial market. Nine combined semesters of co-ops and internships for students have been realized, including students working at NIST and NASA-Glenn. A total of six undergraduates and seven students from underrepresented groups participated in research projects. This proposal seeks to continue the significant achievements accomplished by the original award. Collaborators at Northrop Grumman, NIST, NASA-Glenn, the Army Research Labs, and Caracal will provide access to SiC devices, facilities, personnel expertise, and summer employment to the UA researchers throughout the duration of the renewed project.The broader impacts of this NSF GOALI proposal include: (1) Developing state-of-the-art science in the field of silicon carbide power electronics, (2) Providing research opportunities for underrepresented and minority students, and (3) Disseminating into the public domain advanced power device models for circuit designers.