Investigation and control of 2D-3D interfacial states
Investigation and control of 2D-3D interfacial states
批准号:
2105126
负责人:
Sidong Lei
金额:
$29.49万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2021
资助国家:
美国
项目状态:
已结题
起止时间:
2021-08-01 至 2024-07-31
中文摘要
点击翻译按钮获取中文摘要
英文摘要
Non-technical description: This project aims to experimentally investigate newly observed interfacial quantum states on heterojunctions of layered materials (e.g., graphene) and bulk semiconductors (e.g., silicone). These emerging states are independent of the intrinsic electronic structures of either the layered or bulk materials, but a novel interfacial effect, which enriches our current understanding of low-dimensional solid-state systems. This study opens alternative pathways towards artificial quantum structures for novel electronic, optoelectronic, and quantum technologies that are in line with the National Quantum Initiative Act. The scientific outcomes are disseminated via journals, conferences, and invited talks. More importantly, the research institute of this project, Georgia State University, is a historically minority-serving institution and top-ranked innovative teaching university. Many undergraduate and graduate students, especially underrepresented minority groups will be included in this cutting-edge research and prepare them for careers in science, technology, engineering, and mathematics. Undergraduate students typically continue their study in STEM graduate programs. Graduate students usually pursue their academic careers in universities, national laboratories, and federal research institutions or become leaders in the industries of semiconductors, information technology, etc. Furthermore, the project exposes the Greater Atlanta Area to the frontier of modern quantum science and technology via open houses, talks, summer internships so that the public and K-12 students get access to the state-of-the-art technology and latest scientific progress along with this research. Technical description: Fabrication of layered material heterostructures facilitates the construction of artificial quantum interactions, otherwise intangible in intrinsic materials. Currently, most of these emerging structures are interpreted by the well-established framework of in-plane electronic interactions, whereas a resonant tunneling behavior of graphene-silicon junctions recently discovered by the PI suggests the existence of out-of-plane quantum states, which is originated from an abrupt dimensional change on the interfaces. This new observation refreshes the understanding of reduced-dimensional materials and empowers new designs of artificial quantum structures, as such, necessitates a thorough investigation on the formation mechanism and control methods of these states without delay. For this purpose, this study primarily employs tunneling spectroscopy as the first experimental attempt to identify the determinative factors of these states, including transverse momentum mismatch, lattice orientations, and dielectric properties of the junctions. Following that, temperature-dependent measurements and in-situ atomic/molecular adsorption experiments also unveil the phonon-/defect-induced scattering and inelastic tunneling processes to explore the relaxation of these out-of-plane states. The investigation on these topics enables the construction of novel quantum devices, including layered multiple-well resonant tunneling transistors and resonant molecular detectors, to showcase the transformational potentials of this project. These efforts enrich our comprehension of the interfacial quantum interactions on reduced-dimensional heterostructures, meanwhile envision a breadth of new strategies for the design of terahertz light sources and detectors, cascade optoelectronics, and many other electronic, optoelectronic, and quantum architectures. Furthermore, the project is accompanied by extensive training and education for participating graduate, undergraduate students, and interns to accelerate their career trajectories in condensed matter physics and quantum science. It also promotes the public education of modern quantum science and technology.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
期刊论文(1)
专著(0)
科研奖励(0)
会议论文
CAREER: van der Waals Semiconductor Integration via Surface and Interface Tailoring
-
批准号:2238564
-
项目类别:Continuing Grant
-
资助金额:$51.61万
-
财政年份:2023
-
负责人:Sidong Lei
-
依托单位:
国内基金
海外基金
登录
查看更多内容
Pt/碲化物亲氧性调控助力醇类燃料电氧化的研究
-
批准号:22302168
-
项目类别:青年科学基金项目
-
资助金额:30.00万元
-
批准年份:2023
-
负责人:任芳芳
-
依托单位:
钱江潮汐影响下越江盾构开挖面动态泥膜形成机理及压力控制技术研究
-
批准号:LY21E080004
-
项目类别:省市级项目
-
资助金额:--
-
批准年份:2020
-
负责人:尹鑫晟
-
依托单位:
Cortical control of internal state in the insular cortex-claustrum region
-
批准号:--
-
项目类别:--
-
资助金额:25万元
-
批准年份:2020
-
负责人:Robert Konrad Naumann
-
依托单位:
Lagrange网络实用同步的不连续控制研究
-
批准号:61603174
-
项目类别:青年科学基金项目
-
资助金额:20.0万元
-
批准年份:2016
-
负责人:马米花
-
依托单位:
职业因素致慢性肌肉骨骼损伤模型及防控研究
-
批准号:81172643
-
项目类别:面上项目
-
资助金额:50.0万元
-
批准年份:2011
-
负责人:王忠旭
-
依托单位:
呼吸中枢低氧通气反应的遗传机制及其对睡眠呼吸障碍的影响
-
批准号:81070069
-
项目类别:面上项目
-
资助金额:34.0万元
-
批准年份:2010
-
负责人:韩芳
-
依托单位:
动态无线传感器网络弹性化容错组网技术与传输机制研究
-
批准号:61001096
-
项目类别:青年科学基金项目
-
资助金额:20.0万元
-
批准年份:2010
-
负责人:化存卿
-
依托单位:
超临界机翼激波三维鼓包控制机理及参数优化研究
-
批准号:10972233
-
项目类别:面上项目
-
资助金额:36.0万元
-
批准年份:2009
-
负责人:李建强
-
依托单位:
中枢钠氢交换蛋白3在睡眠呼吸暂停呼吸控制稳定性中的作用和调控机制
-
批准号:30900646
-
项目类别:青年科学基金项目
-
资助金额:20.0万元
-
批准年份:2009
-
负责人:马靖
-
依托单位:
低辐射空间环境下商用多核处理器层次化软件容错技术研究
-
批准号:90818016
-
项目类别:重大研究计划
-
资助金额:50.0万元
-
批准年份:2008
-
负责人:傅忠传
-
依托单位: